Search results for "Silicon"
showing 10 items of 1391 documents
The Statistical Description of de Haas—van Alphen Oscillations in Silicon Nanosandwich
2020
Here, we present room temperature de Haas—van Alphen oscillations measured in silicon nanosandwich in a weak magnetic field. Our results demonstrate a decrease of the oscillation magnitude with increasing magnetic field strength. This behavior is drastically different from the results reported earlier and it is attributed to the low-dimensionality of the studied structure, which enables room temperature observation of the de Haas—van Alphen effect in moderate magnetic fields up to 1000 Oe. We employ the classic Lifshitz-Kosevich formalism based on the dependence of the carrier effective mass on the applied magnetic field, to statistically describe this effect. We note that the statistical a…
Propagation, Stability and Interactions of Novel Three-Wave Parametric Solitons
2006
International audience; We found a new class of analytic soliton solutions that describe the parametric wave mixing of optical pulses in quadratic nonlinear crystals. We analyze the stability properties, interactions and collisions of these solitons.
Spectral broadening enhancement in silicon waveguides through pulse shaping
2012
Spectral broadening in silicon waveguides is usually inhibited at telecom wavelengths due to some adverse effects related to semiconductor dynamics, namely, two-photon and free-carrier absorption (FCA). In this Letter, our numerical simulations show that it is possible to achieve a significant enhancement in spectral broadening when we properly preshape the input pulse to reduce the impact of FCA on spectral broadening. Our analysis suggests that the use of input pulses with the correct skewness and power level is crucial for this achievemen This work was financially supported by the Plan Nacional Investigación, Desarrollo e Innovación (I+D +I) under the research project TEC2008-05490, by…
αdecay studies of the nuclides195Rnand196Rn
2001
The new neutron deficient nuclide ${}^{195}\mathrm{Rn}$ and the nuclide ${}^{196}\mathrm{Rn}$ have been produced in fusion evaporation reactions using ${}^{56}\mathrm{Fe}$ ions on ${}^{142}\mathrm{Nd}$ targets. A gas-filled recoil separator was used to separate the fusion products from the scattered beam. The activities were implanted in a position sensitive silicon detector. The isotopes were identified using spatial and time correlations between implants and decays. Two $\ensuremath{\alpha}$ decaying isomeric states, with ${E}_{\ensuremath{\alpha}}=7536(11)\mathrm{keV}[{T}_{1/2}{=(6}_{\ensuremath{-}2}^{+3})\mathrm{ms}]$ for the ground state and ${E}_{\ensuremath{\alpha}}=7555(11)\mathrm{k…
Beta-decay half-lives at the N = 28 shell closure
2004
Abstract Measurements of the beta-decay half-lives of neutron-rich nuclei (MgAr) in the vicinity of the N =28 shell closure are reported. Some 22 half-lives have been determined, 12 of which for the first time. Particular emphasis is placed on the results for the Si isotopes, the half-lives of which have been extended from N =25 to 28. Comparison with QRPA calculations suggests that 42 Si is strongly deformed. This is discussed in the light of a possible weakening of the spin–orbit potential.
Updated measurement of the average b hadron lifetime
1992
An improved measurement of the average lifetime of b hadrons has been performed with the ALEPH detector. From a sample of 260000 hadronic Z0 decays, recorded during the 1991 LEP run with the silicon vertex detector fully operational, a fit to the impact parameter distribution of lepton tracks coming from semileptonic decays yields an average b hadron lifetime of 1.49 +/- 0.03 +/- 0.06 ps.
Time response of avalanche photodiodes as a function of the internal gain
1998
Abstract Using a red LED and a blue laser as a light source, time response of avalanche photodiodes and Metal-Resistive Silicon (MRS) layer avalanche photodiodes [1] has been measured. A strong dependence of the time resolution on the internal gain has been observed. The obtained results show that the increase of the internal gain improves the time resolution. However, there exists a critical value for the internal gain. Beyond this value a deterioration of the time resolution is observed.
The $\beta$-delayed one- and two-proton emission of $^{27}$S
2001
In an experiment performed at the GANIL LISE3 facility, radioactive 27S isotopes have been produced by projectile fragmentation of a 95 AMeV 36Ar primary beam. After selection by means of the LISE3 separator, the isotope of interest was implanted in a silicon-detector telescope where its half-life ( T 1/2 = 15.5(15) ms) and its main decay branches were measured.
Silicon detectors for forward tracking in ATLAS
1996
Abstract A 12 cm long silicon microstrip detector module with a fan geometry has been designed and constructed. The performance of the detector has been studied in a test beam at CERN. Results are presented on the hit efficiency and the position resolution as a function of position along the strips. With a hit efficiency of 99.5% and a spatial resolution of typically 35 μm the performance of these detectors exceeds that of other candidate technologies for the precision forward tracker of the ATLAS inner detector.
Silicon microstrip detectors for the ATLAS SCT
2002
Abstract The ATLAS Semiconductor Tracker at the Large Hadron Collider (LHC) will incorporate ∼20,000 individual silicon microstrip sensors representing ∼60 m 2 of silicon. Production and delivery of the sensors is already underway and scheduled for completion by late 2002. The sensors have been optimised for operation in the harsh radiation environment of the LHC, and subjected to an extensive qualification program in which their pre- and post-irradiation characteristics have been evaluated. The sensor design features are reviewed, together with their electrical characteristics and the Quality Control procedures adopted by ATLAS during production.