Search results for "Surfaces"

showing 10 items of 2837 documents

Radial properties of high-frequency electrodeless lamps in argon–mercury mixtures

2005

Radial emission properties of high-frequency electrodeless discharge lamps (HFEDLs) in argon–mercury mixtures are investigated both numerically and experimentally. The radial profile of the intensities of the mercury triplet lines 404.7, 435.8 and 546.1 nm are measured for two different values of the high frequency generator power. A model describing physical processes in an HFEDL, including the calculation of radial plasma parameters, is developed. Radial intensity dependences of the lines 404.7, 435.8 and 546.1 nm are calculated and are found to be in good agreement with the experimental measurements.

Signal generatorArgonGas-discharge lampAcoustics and UltrasonicsPlasma parametersAnalytical chemistrychemistry.chemical_elementCondensed Matter PhysicsSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionMercury (element)chemistrylawAtomic physicsJournal of Physics D: Applied Physics
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High Fluorescence of Thioflavin T Confined in Mesoporous Silica Xerogels

2013

Trapping of organic molecules and dyes within nanoporous matrices is of great interest for the potential creation of new materials with tailored features and, thus, different possible applications ranging from nanomedicine to material science. The understanding of the physical basis of entrapment and the spectral properties of the guest molecules within the host matrix is an essential prerequisite for the design and control of the properties of these materials. In this work, we show that a mesoporous silica xerogel can efficiently trap the dye thioflavin T (ThT, a molecule used as a marker of amyloid fibrils and with potential drug benefits), sequestering it from an aqueous solution and pro…

Silicon dioxideSurface PropertiesSurface PropertieQuantum yieldNanotechnologyCondensed Matter PhysicPhotochemistryThioflavin T Fluorescence XerogelMesoporous materialFluorescencechemistry.chemical_compoundElectrochemistryMoleculeGeneral Materials ScienceBenzothiazolesParticle SizeSpectroscopyGelMolecular StructureChemistryNanoporousSurfaces and InterfacesMesoporous silicaCondensed Matter PhysicsSilicon DioxideFluorescenceSettore FIS/07 - Fisica Applicata(Beni Culturali Ambientali Biol.e Medicin)ThiazolesSpectrometry FluorescenceNanomedicineThioflavinMaterials Science (all)ThiazoleSurfaces and InterfaceGelsPorosity
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Advanced fragmentation stage of oxide coating on polymer substrate under biaxial tension

2005

Crack patterns of 100-nm-thick silicon oxide coating on polypropylene film subjected to equibiaxial stress loading are studied experimentally. The loading is achieved by means of a bulging cell mounted under an optical microscope with stepwise pressurization of film specimens. The evolution of the coating fragment area distribution at relatively high strains is modeled using Weibull statistics to describe the coating strength. The fragment area distribution at an advanced fragmentation stage is shown to scale with the average fragment area, the latter being a power function of the applied biaxial strain.

Silicon oxidePolypropyleneMaterials sciencePolymersMetals and AlloysBiaxial tensile testSurfaces and Interfacesengineering.materialSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialslaw.inventionchemistry.chemical_compoundchemistryOptical microscopeCoatingFragmentationCoatingslawMaterials ChemistryengineeringPolymer substrateThin filmComposite materialSilicon oxideWeibull distributionThin Solid Films
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On the experimental validation of an improved five-parameter model for silicon photovoltaic modules

2012

Abstract This paper presents the experimental validation of a new five-parameter model capable of analytically describing the I–V characteristic of a silicon photovoltaic module for each generic condition of operative temperature and solar irradiance. The operating current calculated with the model was validated on the basis of a series of experimental measurements performed in the field on two commercial silicon photovoltaic panels connected to a set of nine constant values of the electrical load. In order to examine the panels working in almost steady-state conditions only the data-sets of the sunniest days from sunrise to sunset were used. Unfortunately the production spread of photovolt…

Silicon photovoltaic moduleExperimental validationOperative temperatureSettore ING-IND/11 - Fisica Tecnica AmbientaleMaterials scienceField (physics)SiliconElectrical loadRenewable Energy Sustainability and the Environmentbusiness.industryPhotovoltaic systemchemistry.chemical_elementMechanical engineeringI–V characteristicSolar irradianceSolar energySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsSolar energychemistrybusinessConstant (mathematics)Five-parameter modelSolar Energy Materials and Solar Cells
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Molecular dynamics simulation of epitaxial growth of the Si(001) surface

1988

Abstract Molecular beam epitaxy on a Si(100) substrate has been studied using a molecular dynamics method with the Stillinger-Weber model potential. At high substrate temperature, 800 K, well ordered crystalline layers are found to grow underneath an amorphous overlayer of approximately 5 A thick. A limiting temperature for epitaxial growth is found to be 480 K, below which the growth does not produce ordered layers. When the sample deposited below 480 K is heated up to 800 K and the deposition is started again the original adatoms start to form ordered atomic layers. Thus the collisions of the deposited atoms in addition to the substrate temperature seem to play an essential role in the gr…

SiliconAnnealing (metallurgy)Chemistrychemistry.chemical_elementCrystal growthSurfaces and InterfacesCondensed Matter PhysicsEpitaxySurfaces Coatings and FilmsOverlayerAmorphous solidChemical physicsMaterials ChemistryPhysical chemistryThin filmMolecular beam epitaxySurface Science
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The spatial distribution of non-linear effects in multi-photon photoemission from metallic adsorbates on Si(1 1 1)

2001

Multi-photon excitations from thin metallic films on silicon substrates have been observed utilising photoemission electron microscopy. The photoelectrons have been excited by means of high power femtosecond laser pulses with a photon energy below the work function threshold. The strong spatial variations of the non-linear effects became directly visible in electron emission from the adsorbed thin films. Centres of enhanced photoelectron yield, so-called hot spots, were observed on the surfaces of various samples. The multi-photon electron yield of the metallic films (permalloy and lead) depends strongly on the sample topography and the photon polarisation.

SiliconChemistryAnalytical chemistryPhysics::Opticschemistry.chemical_elementSurfaces and InterfacesElectronPhoton energyPhotoelectric effectCondensed Matter PhysicsMolecular physicsSurfaces Coatings and FilmsCondensed Matter::Materials SciencePhotoemission electron microscopyFemtosecondMaterials ChemistryWork functionThin filmSurface Science
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Photoelectron lifetime determination of Ag(1 1 1) films at the Fermi surface

2001

The electronic properties of 10 monolayers Ag(111) films deposited onto Si(111)-7 x 7 substrates at room temperature have been studied by scanning the photoelectron intensity at the Fermi level in different symmetry directions. The main features observed in these profiles correspond to Lorentzian-like peaks produced by the pass of the sp band through the Fermi level. A simple model has been developed, which connects the photoemission peak linewidth with the lifetime of photoelectrons excited from the Fermi level. The obtained inverse photoelectron lifetime values have been found to be in excellent agreement with the typical values of the Ag single crystals. These results support the fact th…

SiliconChemistryFermi levelchemistry.chemical_elementFermi surfaceSurfaces and InterfacesPhotoelectric effectCondensed Matter PhysicsMolecular physicsSymmetry (physics)Surfaces Coatings and FilmsCondensed Matter::Materials ScienceLaser linewidthCrystallographysymbols.namesakeExcited stateMonolayerMaterials ChemistrysymbolsSurface Science
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Structural and in situ vibrational study of luminescent cluster assembled silicon thin films

2006

A Low Energy Cluster Beam Deposition apparatus is employed to produce cluster assembled silicon thin films (1-500 nm thick) by using a laser vaporization source. The generated clusters are studied since their formation through time of flight mass spectra and the calculated size in the gas phase are compared with those of the deposited aggregates obtained through Dynamic Scanning Force Microscopy. The deposited material is also studied "in situ" by Raman and infrared spectroscopy. The spectra reveal that the as deposited clusters are hydrogenated with negligible amount of oxide. A comparison of the film properties before and after their air exposure shows that the exposition induces a consis…

SiliconChemistryMetals and AlloysAnalytical chemistryOxideNanoparticlechemistry.chemical_elementInfrared spectroscopySurfaces and InterfacesPorous siliconSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsCondensed Matter::Materials Sciencechemistry.chemical_compoundsymbols.namesakeSIZEMaterials ChemistrysymbolsCluster (physics)POROUS SILICONSPECTRAPHOTOLUMINESCENCEThin filmDEPOSITIONRaman spectroscopy
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Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

2007

Abstract HF acid attack of SiO2 and Si3N4 substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO2 and Si3N4 surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO2 and Si3N4 layer, respectively. The linear dependence between the HF concentration and the Si3N4 cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO2 layer can be explained by a combination of deep and lateral etching. The ca…

SiliconChemistrySurface stressAnalytical chemistryGeneral Physics and Astronomychemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and Filmschemistry.chemical_compoundSilicon nitrideX-ray photoelectron spectroscopyEtching (microfabrication)Plastic bendingReactive-ion etchingComposite materialLayer (electronics)Applied Surface Science
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Organic Monolayers by B(C6F5)3-Catalyzed Siloxanation of Oxidized Silicon Surfaces

2017

Inspired by the homogeneous catalyst tris(pentafluorophenyl) borane [B(C6F5)3], which acts as a promotor of Si-H bond activation, we developed and studied a method of modifying silicon oxide surfaces using hydrosilanes with B(C6F5)3 as the catalyst. This dedihydrosiloxanation reaction yields complete surface coverage within 10 min at room temperature. Organic monolayers derived from hydrosilanes with varying carbon chain lengths (C8-C18) were prepared on oxidized Si(111) surfaces, and the thermal and hydrolytic stabilities of the obtained monolayers were investigated in acidic (pH 3) medium, basic (pH 11) medium, phosphate-buffered saline (PBS), and deionized water (neutral conditions) for …

SiliconInorganic chemistrySilici Compostoschemistry.chemical_elementHomogeneous catalysis02 engineering and technologyBorane010402 general chemistry01 natural sciencesQuímica de superfíciesCatalysischemistry.chemical_compoundHydrolysisMonolayerElectrochemistryLife ScienceGeneral Materials ScienceSilicon oxideSpectroscopyVLAGOrganic ChemistrySurfaces and Interfaces021001 nanoscience & nanotechnologyCondensed Matter PhysicsOrganische ChemieSilane0104 chemical scienceschemistry0210 nano-technologyQuímica orgànicaLangmuir
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