Search results for "ToF-E"

A simple timestamping data acquisition system for ToF-ERDA

2015

A new data acquisition system, ToF-DAQ, has been developed for a ToF-ERDA telescope and other ToF-E and ToF-ToF measurement systems. ToF-DAQ combines an analogue electronics front-end to asynchronous time stamped data acquisition by means of a FPGA device. Coincidences are sought solely in software based on the timestamps. Timestamping offers more options for data analysis as coincidence events can be built also in offline analysis. The system utilises a National Instruments R-series FPGA device and a Windows PC as a host computer. Both the FPGA code and the host software were developed using the National Instruments LabVIEW graphical programming environment. Up to eight NIM ADCs can be han…

Time-of-flight - Energy spectrometer for elemental depth profiling - Jyväskylä design

2014

Abstract A new time-of-flight elastic recoil detection spectrometer has been built, and initially the main effort was focused in getting good timing resolution and high detection efficiency for light elements. With the ready system, a 154 ps timing resolution was recorded for scattered 4.8 MeV 4 He 2+ ions. The hydrogen detection efficiency was from 80% to 20% for energies from 100 keV to 1 MeV, respectively, and this was achieved by having an additional atomic layer deposited Al 2 O 3 coating on the first timing detector’s carbon foil. The data acquisition system utilizes an FPGA-card to time-stamp every time-of-flight and energy event with 25 ns resolution. The different origins of the ba…

Depth profiling of Al2O3+ TiO2 nanolaminates by means of a time-of-flight energy spectromete

2011

Atomic layer deposition (ALD) is currently a widespread method to grow conformal thin films with a sub-nm thickness control. By using ALD for nanolaminate oxides, it is possible to fine tune the electrical, optical and mechanical properties of thin films. In this study the elemental depth profiles and surface roughnesses were determined for Al2O3 + TiO2 nanolaminates with nominal single-layer thicknesses of 1, 2, 5, 10 and 20 nm and total thickness between 40 nm and 60 nm. The depth profiles were measured by means of a time-of-flight elastic recoil detection analysis (ToF-ERDA) spectrometer recently installed at the University of Jyväskylä. In TOF-E measurements 63Cu, 35Cl, 12C and 4He ions…

Low-Temperature Atomic Layer Deposition of High-k SbOx for Thin Film Transistors

2022

SbOx thin films are deposited by atomic layer deposition (ALD) using SbCl5 and Sb(NMe2)3 as antimony reactants and H2O and H2O2 as oxidizers at low temperatures. SbCl5 can react with both oxidizers, while no deposition is found to occur using Sb(NMe2)3 and H2O. For the first time, the reaction mechanism and dielectric properties of ALD-SbOx thin films are systematically studied, which exhibit a high breakdown field of ≈4 MV cm−1 and high areal capacitance ranging from 150 to 200 nF cm−2, corresponding to a dielectric constant ranging from 10 to 13. The ZnO semiconductor layer is integrated into a SbOx dielectric layer, and thin film transistors (TFTs) are successfully fabricated. A TFT with…

Improvement of time-of-flight spectrometer for elastic recoil detection analysis

2013

Potku – New analysis software for heavy ion elastic recoil detection analysis

2014

Time-of-flight elastic recoil detection (ToF-ERD) analysis software has been developed. The software combines a Python-language graphical front-end with a C code computing back-end in a user-friendly way. The software uses a list of coincident time-of- flight–energy (ToF–E) events as an input. The ToF calibration can be determined with a simple graphical procedure. The graphical interface allows the user to select different elements and isotopes from a ToF–E histogram and to convert the selections to individual elemental energy and depth profiles. The resulting sample composition can be presented as relative or absolute concentrations by integrating the depth profiles over user-defined rang…