Search results for "Toe"

showing 10 items of 3824 documents

Sensing of the Molecular Spin in Spin-Crossover Nanoparticles with Micromechanical Resonators

2019

In the past years, the use of highly sensitive silicon microelectromechanical cantilevers has been proposed as a tool to characterize the spin-crossover phenomenon by employing fast optical readout of the motion. In this work, Fe II -based spin-crossover nanoparticles of the well-known [Fe(Htrz) 2 (trz)](BF 4 ) complex wrapped with thin silica shells of different sizes will be studied by means of silicon microresonators. The silica shell will enhance its chemical stability, whereas the low thickness will allow a proper mechanical coupling between the cantilever and the spin-crossover core. To maximize the sensing of the spin-crossover phenomena, different cantilever geometries and flexural…

Materials scienceCantileverSiliconchemistry.chemical_elementNanoparticle02 engineering and technology010402 general chemistry01 natural sciencesResonatorFlexural strengthSpin crossoverPhysical and Theoretical ChemistryCouplingbusiness.industryCiència dels materials021001 nanoscience & nanotechnology0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsGeneral EnergychemistryOptoelectronicsCompostos de coordinació0210 nano-technologybusinessActuatorFisicoquímicaThe Journal of Physical Chemistry C
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Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

2007

The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…

Materials scienceCarrier transportConducting polymersGeneral Physics and AstronomyOrganic light emitting diodesElectroluminescencelaw.inventionCurrent density:FÍSICA [UNESCO]lawPhenyleneOLEDSpontaneous emissionMinority carriersbusiness.industryUNESCO::FÍSICABiasingLight emitting diodesElectroluminescenceBias voltageElectron-hole recombinationOptoelectronicsElectron trapsbusinessConducting polymers ; Organic light emitting diodes ; Electron-hole recombination ; Electroluminescence ; Minority carriers ; Electron traps ; Current densityCurrent densityOrder of magnitudeLight-emitting diode
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Photosensitivity and second harmonic generation in chalcogenide arsenic sulfide poled glasses

2011

International audience; The present work investigates the photoinduced Second Harmonic Generation processes in thermally poled arsenic sulfide glasses. SHG Maker fringes patterns associated to SHG kinetic measurements about illumination and Raman spectroscopy have been conducted in order to bring new information which confirm the combined influence of charge carriers and mid-range glass structural modification on the poling and the photodarkening mechanisms.

Materials scienceChalcogenide02 engineering and technologySulfides01 natural sciences010309 opticsCondensed Matter::Materials Sciencesymbols.namesakechemistry.chemical_compoundOpticsPhotosensitivity0103 physical sciencesbusiness.industryGlassesChalcogenidePolingSecond-harmonic generation[CHIM.MATE]Chemical Sciences/Material chemistry021001 nanoscience & nanotechnologyElectronic Optical and Magnetic Materialschemistry[ CHIM.MATE ] Chemical Sciences/Material chemistryPhotodarkeningsymbolsOptoelectronicsArsenic sulfideCharge carrier0210 nano-technologybusinessRaman spectroscopy
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Application of amorphous chalcogenide thin films in optical recording technologies

2005

A solid immersion holographic method for the recording of refractive-index and surface-relief modulated gratings with a period of 0.2 µm–1 µm in amorphous films of chalcogenide semiconductors As2S3 and As-S-Se has been developed and studied. The angular selectivity of holographic recording in amorphous chalcogenide thin films can be improved significantly by a decrease of grating period. The possibility to use the amorphous chalcogenide films as a media for holographic recording and storage of information with high density is discussed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Materials scienceChalcogenidebusiness.industryHolographyGratingAmorphous solidlaw.inventionchemistry.chemical_compoundOpticsSemiconductorchemistrylawOptical recordingOptoelectronicsThin filmbusinessHolographic recordingphysica status solidi (c)
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Efficient wide band gap double cation – double halide perovskite solar cells

2017

In this work we study the band gap variation and properties of the perovskite compound Cs0.15FA0.85Pb(BrxI1−x)3 as a function of the halide composition, with the aim of developing an efficient complementary absorber for MAPbI3 in all-perovskite tandem devices. We have found the perovskite stoichiometry Cs0.15FA0.85Pb(Br0.7I0.3)3 to be a promising candidate, thanks to its band gap of approximately 2 eV. Single junction devices using this perovskite absorber lead to a maximum PCE of 11.5%, among the highest reported for solar cells using perovskites with a band gap wider than 1.8 eV.

Materials scienceChemical substanceTandemRenewable Energy Sustainability and the Environmentbusiness.industryBand gapWide-bandgap semiconductorHalideNanotechnology02 engineering and technologyGeneral Chemistry010402 general chemistry021001 nanoscience & nanotechnology01 natural sciences0104 chemical sciencesOptoelectronicsGeneral Materials Science0210 nano-technologyScience technology and societybusinessStoichiometryPerovskite (structure)Journal of Materials Chemistry A
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Thin-Film Transistors: Two-Step Solution-Processed Two-Component Bilayer Phthalocyaninato Copper-Based Heterojunctions with Interesting Ambipolar Org…

2016

Materials scienceComponent (thermodynamics)Ambipolar diffusionbusiness.industryMechanical EngineeringBilayerTwo stepchemistry.chemical_elementHeterojunctionCopperSolution processedchemistryMechanics of MaterialsThin-film transistorOptoelectronicsbusinessAdvanced Materials Interfaces
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Nonlocal model for a magneto-electro-elastic nanoplate

2013

A mathematical model based on nonlocal third-order shear deformation plate theory has been developed to evaluate the mechanical and electromagnetic behavior of magneto-electro-elastic nanoplates. Two types of magneto-electro-elastic composites have been considered, all of them combination of Barium Titanate sheets, that represents the piezoelectric phase, and Cobalt Ferrite, that is the piezomagnetic component. Setting magneto-electric boundary conditions on each laminate, it has been possible to extrapolate and to analyze free vibrations frequencies for all considered plates, allowing to do objective assessments on what factors influence laminate modes and, especially, how these vary in th…

Materials scienceComponent (thermodynamics)Phase (waves)MagnetoelectroelasticityPiezoelectricityVibrationCondensed Matter::Materials Sciencechemistry.chemical_compoundnano-platechemistryPlate theoryBarium titanatePhysics::Atomic PhysicsBoundary value problemComposite materialSettore ING-IND/04 - Costruzioni E Strutture AerospazialiMagnetonol local theories
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Photoinduced charge transfer from Carbon Dots to Graphene in solid composite

2019

Abstract The emission in solid phase of Carbon Dots (CDs) deposited by drop-casting technique is investigated by means of micro-photoluminescence. Graphene and SiO2 are used as substrates, and the influence of their different nature – conductive or insulating – on the emission of CDs is highlighed. In particular, a systematic loss of efficiency in the emission of CDs on graphene is found, suggesting a CD-graphene interaction possibly due to a photoinduced electron transfer between the surface states of CDs and the conduction band of graphene. Finally, thanks to the negligible influence on CDs emission, SiO2 substrate is used as support to perform thermal processing of CDs in solid phase, sh…

Materials scienceComposite numberThermal processingchemistry.chemical_element02 engineering and technologySubstrate (electronics)01 natural sciencesPhotoinduced electron transferlaw.inventionCharge transfergraphene carbon dotslawPhase (matter)0103 physical sciencesThermalMaterials ChemistryCarbon dotsPhotoluminescenceSurface states010302 applied physicsbusiness.industryGrapheneMetals and AlloysSurfaces and Interfaces021001 nanoscience & nanotechnologySurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialschemistryOptoelectronicsGraphene0210 nano-technologybusinessCarbon
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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

2020

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such devices, other features related to the electrical and structural properties of the GaN layer prevent an efficient radiative recombination. This work illustrates some advances made on ZnO/GaN-based LEDs, by using high-thickness GaN layers for the p-region of the device and an ad hoc device topology. Heterojunction LEDs consist of a quasicoalesced non-intentionally doped ZnO nanorod layer deposited by chemical bath deposition onto a metal&ndash

Materials scienceComputer Networks and CommunicationsBand gapgrowthlcsh:TK7800-836002 engineering and technologyfabricationElectroluminescence01 natural sciencesSettore ING-INF/01 - Elettronicaganlaw.inventionelectroluminescencelawleds0103 physical sciencesmorphologyzno/gan heterojunction ledsSpontaneous emissionElectrical and Electronic Engineeringepitaxial p-gan layers010302 applied physicsZnO nanorodbusiness.industryzno nanorodszno/gan heterostructurelcsh:Electronicsepitaxial p-GaN layerHeterojunctiondependence021001 nanoscience & nanotechnologyoptical-propertieschemical bath depositionSemiconductorHardware and ArchitectureControl and Systems EngineeringZnO/GaN heterojunction LEDSignal ProcessingznoOptoelectronicsNanorod0210 nano-technologybusinessnanorodsChemical bath depositionLight-emitting diode
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Orbital Rashba effect in a surface-oxidized Cu film

2020

Recent experimental observation of an unexpectedly large current-induced spin-orbit torque in surface oxidized Cu on top of a ferromagnet pointed to a possibly prominent role of the orbital Rashba effect (ORE) in this system. Here, we use first principles methods to investigate the ORE in a system of oxygen monolayer deposited on top of a Cu(111) film. We show that surface oxidization of the Cu film leads to a gigantic enhancement of the ORE near the Fermi energy. The resulting chiral orbital texture in the momentum space is exceptionally strong, reaching as much as $\ensuremath{\sim}0.5\ensuremath{\hbar}$ in magnitude. We find that resonant hybridization between O $p$ states and Cu $d$ sta…

Materials scienceCondensed Matter - Mesoscale and Nanoscale PhysicsQuantitative Biology::Neurons and CognitionCondensed matter physicsPhotoemission spectroscopyFOS: Physical sciencesPosition and momentum spaceFermi energyCondensed Matter::Materials ScienceFerromagnetismMesoscale and Nanoscale Physics (cond-mat.mes-hall)ddc:530Texture (crystalline)Spin (physics)Order of magnitudeRashba effectPhysical Review B
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