Search results for "Toe"

Influence of alkylphosphonic acid grafting on the electronic and magnetic properties of La2/3Sr1/3MnO3 surfaces

2015

Self-assembled monolayers (SAMs) are highly promising materials for molecular engineering of electronic and spintronics devices thanks to their surface functionalization properties. In this direction, alkylphosphonic acids have been used to functionalize the most common ferromagnetic electrode in organic spintronics: La2/3Sr1/3MnO3 (LSMO). However, a study on the influence of SAMs grafting on LSMO electronic and magnetic properties is still missing. In this letter, we probe the influence of alkylphosphonic acids-based SAMs on the electronic and magnetic properties of the LSMO surface using different spectroscopies. We observe by X-ray photoemission and X-ray absorption that the grafting of …

Chemical stability of the magnetic oxide EuO directly on silicon observed by hard x-ray photoemission spectroscopy

2011

We present a detailed study of the electronic structure and chemical state of high-quality stoichiometric EuO and O-rich ${\mathrm{Eu}}_{1}{\mathrm{O}}_{1+x}$ thin films grown directly on silicon without any buffer layer using hard x-ray photoemission spectroscopy (HAXPES). We determine the EuO oxidation state from a consistent quantitative peak analysis of $4f$ valence band and $3d$ core-level spectra. The results prove that nearly ideal, stoichiometric, and homogeneous EuO thin films can be grown on silicon, with a uniform depth distribution of divalent Eu cations. Furthermore, we identify the chemical stability of the EuO/silicon interface from Si $2p$ core-level photoemission. This work…

Generation of broadband THz transients via metallic spintronic emitters driven by 20-fs pulses at 1030 nm

2020

We explore power and bandwidth scaling for the generation of highly-temporally-confined THz transients from spintronic emitters, driven by the 250-fs and 20-fs pulses of a high-power 28-MHz Yb-based laser, spectrally centered at 1030 nm.

Exploring room-temperature transport of single-molecule magnet-based molecular spintronics devices using the magnetic tunnel junction as a device pla…

2019

A device architecture utilizing a single-molecule magnet (SMM) as a device element between two ferromagnetic electrodes may open vast opportunities to create novel molecular spintronics devices. Here, we report a method of connecting an SMM to the ferromagnetic electrodes. We utilized a nickel (Ni)–AlOx–Ni magnetic tunnel junction (MTJ) with the exposed side edges as a test bed. In the present work, we utilized an SMM with a hexanuclear [Mn6(μ3-O)2(H2N-sao)6(6-atha)2(EtOH)6] [H2N-saoH = salicylamidoxime, 6-atha = 6-acetylthiohexanoate] complex that is attached to alkane tethers terminated with thiols. These Mn-based molecules were electrochemically bonded between the two Ni electrodes of an…

Design of Molecular Spintronics Devices Containing Molybdenum Oxide as Hole Injection Layer

2017

Effect of DC Electric Field on the Emitted THz Signal of Antenna-Coupled Spintronic Emitters

2019

We study the impact of an external electric DC field on antenna-coupled spintronic THz emitters driven by a 90 fs, 1550 nm laser oscillator. Simultaneous application of external electric and magnetic field shows a quadratic decrease in peak-peak THz pulse with increase in the bias voltage. We ascribe this decrease to Joule heating caused by the DC current flowing through the spintronic material.

Unravelling steady-state bulk recombination dynamics in thick efficient vacuum-deposited perovskite solar cells by transient methods

2019

Accurately identifying and understanding the dominant charge carrier recombination mechanism in perovskite solar cells are of crucial importance for further improvements of this already promising photovoltaic technology. Both optical and electrical transient methods have previously been employed to strive for this warranted goal. However, electrical techniques can be strongly influenced by the capacitive response of the device which hides the carrier recombination dynamics that are relevant under steady state conditions. To ascertain the identification of steady state relevant charge carrier dynamics, it is beneficial to evaluate thicker films to minimize the impact of device capacitance. H…

Vibrational modes and strain in GaN/AlN quantum dot stacks: dependence on spacer thickness

2007

We have investigated the influence of spacer thickness on the vibrational and strain characteristics of GaN/AlN quantum dot multilayers (QD). The Raman shift corresponding to the E2h vibrational mode related to the QDs has been analyzed for AlN thicknesses ranging from 4.4 nm to 13 nm, while the amount of GaN deposited in each layer remained constant from sample to sample. It is shown that there is a rapid blue shift of the GaN vibrational mode with spacer thickness when its value is smaller than 7 nm while it remains almost constant for thicker spacers. A rapid increase of the Raman line-width in the thicker samples is also observed. The experimental behavior is discussed in comparison wit…

Back Cover: Nanographenes: Ultrastable, Switchable, and Bright Probes for Super‐Resolution Microscopy (Angew. Chem. Int. Ed. 1/2020)

2019

Electron Binding in a Superatom with a Repulsive Coulomb Barrier: The Case of [Ag44(SC6H3F2)30]4– in the Gas Phase

2020

The electron binding mechanism in [Ag44(SC6H3F2)30]4- (SC6H3F2 = 3,4-difluorobenzenethiolate) tetra-anion was studied by photoelectron spectroscopy (PES), collision-induced dissociation mass spectrometry (CID-MS), and density functional theory (DFT) computations. PES showed that [Ag44(SC6H3F2)30]4- is energetically metastable with respect to electron autodetachment {[Ag44(SC6H3F2)30]3- + e-} and features a repulsive Coulomb barrier (RCB) with a height of 2.7 eV. However, CID-MS revealed that [Ag44(SC6H3F2)30]4- does not release an electron upon collisional excitation but undergoes dissociation. DFT computations performed on the known structure of [Ag44(SC6H3F2)30]4- confirmed the negative a…