Search results for "Toe"
showing 10 items of 3824 documents
Energy- and angle-dependent threshold photoemission magnetic circular dichroism from an ultrathin Co/Pt(111) film
2010
Threshold photoemission magnetic circular dichroism (TPMCD) in one-photon photoemission (1PPE) and two-photon photoemission (2PPE) is measured at an ultrathin Co film grown on Pt(111). Energy-dependent measurements reveal maximum asymmetries directly at the photoemission threshold (1.90% for 1PPE and 11.7% for 2PPE) which weakly decrease with increasing photon energy. The measured TPMCD asymmetries are discussed in two excitation models on the basis of spin-resolved band-structure calculations. For the model of direct band-to-band transitions in other k directions than the direction of observation (Gamma-L) ab initio calculations for 1PPE and 2PPE are performed. The theory is in reasonable …
Influence ofsp−dhybridization on the electronic structure of Al-Mn alloys
2008
The influence of $sp\text{\ensuremath{-}}d$ hybridization on the electronic structure of different Al-Mn alloys has been studied by photoelectron spectroscopy. Experimental evidence of a pseudogap in a crystalline binary Hume-Rothery alloy is provided. The pseudogap varies systematically with Mn concentration. The $sp\text{\ensuremath{-}}d$ hybridization alone, even in the absence of Hume-Rothery mechanism, can produce the pseudogap. Existence of the pseudogap, suppression of the $\mathrm{Mn}\phantom{\rule{0.2em}{0ex}}2p$ satellite, and decrease in the Doniach-\ifmmode \check{S}\else \v{S}\fi{}unji\ifmmode \acute{c}\else \'{c}\fi{} asymmetry parameter are the consequences of the $sp\text{\e…
Electronic structure studies ofBaFe2As2by angle-resolved photoemission spectroscopy
2009
We report high resolution angle-resolved photoemission spectroscopy (ARPES) studies of the electronic structure of ${\text{BaFe}}_{2}{\text{As}}_{2}$, which is one of the parent compounds of the Fe-pnictide superconductors. ARPES measurements have been performed at 20 and 300 K, corresponding to the orthorhombic antiferromagnetic phase and the tetragonal paramagnetic phase, respectively. Photon energies between 30 and 175 eV and polarizations parallel and perpendicular to the scattering plane have been used. Measurements of the Fermi surface yield two hole pockets at the $\ensuremath{\Gamma}$ point and an electron pocket at each of the $X$ points. The topology of the pockets has been conclu…
Quasiparticle interference of spin momentum locked surface states at step edges on Re(0001)
2020
Quasiparticle interference patterns formed by a surface state on the Re(0001) surface were investigated using scanning tunneling spectroscopy. The energy dispersion is inferred from Fourier-transformed differential conductivity maps for occupied and unoccupied states. The band dispersion for occupied states agrees with earlier published results obtained by angle-resolved photoemission spectroscopy. An analysis of the phase of interference patterns at step edges reveals a drastic change in the effective energy barrier for backscattering above and below the Fermi level. The attenuation of the interference pattern with increasing distance indicates interband scattering is the dominant scatteri…
Orbital origin and matrix element effects in the Ag/Si(111)-()R30° Fermi surface
2007
The Fermi surface (FS) of the Ag/Si(1 1 1)-3×3 reconstruction with an excess of Ag has been mapped by angle resolved photoemission spectroscopy with polarized light in a wide region of the reciprocal space and with different detection geometries. In contrast to previous results, a strong polarization dependence is observed. Applying the dipole selection rules, it is found that the surface state at the Fermi level, S1 state, has odd symmetry with respect to the mirror plane of the honeycomb-chained triangle structure, indicating that it is mainly derived from Ag 5px and 5py orbitals. This conclusion is revised in the new frame of a inequivalent-triangle structure for the Ag/Si(1 1 1)-3×3 at …
Identification of Néel Vector Orientation in Antiferromagnetic Domains Switched by Currents in NiO/Pt Thin Films
2021
Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic $\mathrm{Ni}\mathrm{O}/\mathrm{Pt}$ thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the N\'eel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the N\'eel-vector orientation in these domains is along [$\ifmmode\pm\else\textpm\fi{}5$ $\ifmmode\pm\else\textpm\fi{}5$ 19], different compared to the bulk $⟨112⟩$ d…
The effect of reducing dimensionality on the excitonic recombination in InAs/InP heterostructures
1997
In this work we study the exciton recombination of InAs/InP self-organized quantum dots by means of photolumincscence (PL) as a function of temperature and excitation density. Well defined islands, spatially separated in most cases, and with different size distribution, make localized exciton recombination the dominant contribution to the PL spectrum. From our experimental results, we propose the co-existence of two types of islands, one with small height whose contribution to the PL spectra is important in samples with low InAs coverage (below two monolayers), and the properly 3D islands, whose dimensions and sheet concentration increase with the InAs coverage. Good quality structures are …
Resonant rayleigh scattering in semiconductor structures
1995
A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
Plasmonic communications : light on a wire
2013
The emerging field of plasmonics promises the generation, processing, transmission, sensing and detection of signals at optical frequencies along metallic surfaces much smaller than the wavelengths they carry. Plasmonic technology has applications in a wide range of fields, including biophotonics, sensing, chemistry and medicine. But perhaps the area where it will have the most profound impact is in optical communications, since plasmonic waves oscillate at optical frequencies and thus can carry information at optical bandwidths.
Microwave induced co-tunneling in single electron tunneling transistors
2002
Abstract The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics. The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage fixed at maximum Coulomb blockade. With the microwave signal applied to one side of the t…