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RESEARCH PRODUCT
Resonant rayleigh scattering in semiconductor structures
A. CantaredoS. T. PavlovMarcello ColocciFranco BoganiMassimo GurioliV. I. BelitskyAnna Vinattierisubject
PhysicsCondensed matter physicsbusiness.industryfood and beveragesGeneral Physics and AstronomyHeterojunctionSurface finishCondensed Matter::Mesoscopic Systems and Quantum Hall Effectsymbols.namesakeSemiconductorComputer Science::Systems and ControlsymbolsOptoelectronicsRayleigh scatteringbusinessQuantum welldescription
A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 1995-11-01 | Il Nuovo Cimento D |