Search results for "Toe"

showing 10 items of 3824 documents

Light transport in hetero-opal photonic crystals

2005

The effect of photonic bandgap interface upon the light scattering was studied in hetero-opals consisting of two opal thin films with different lattice constant. It is shown that the weak scattering regime is preserved in thin hetero-opal films. By comparing scattering spectra of single and hetero-opal films recorded under reversing angles of light incidence and detection it was demonstrated that the interface scatters stronger the light at oblique incident angles. Squeezing of the scattering diagram of hetero-opals compared to single opal films is also assigned to the interface scattering.

Quantum opticsMaterials scienceScatteringbusiness.industryLight scatteringQuantitative Biology::Cell BehaviorCondensed Matter::Materials ScienceLattice constantOptoelectronicsGrazing-incidence small-angle scatteringHigh Energy Physics::ExperimentThin filmSpectroscopybusinessPhotonic crystalSPIE Proceedings
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1.3 µm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier

2003

A GaInNAs/GaAs vertical cavity semiconductor optical amplifier (VCSOA) is reported. This is believed to be the first monolithic VCSOA operating at 1.3 mum. Under continuous-wave optical pumping in a singlemode fibre coupled format, gain figures of up to 17.7 dB were achieved. Amplification with 12 GHz bandwidth,was obtained at 12.8 dB peak gain.

Quantum opticsOptical amplifierMaterials scienceApplied physicsbusiness.industryBandwidth (signal processing)VCSOA GaInNAsOptical pumpingOpticsSemiconductorOptoelectronicsElectrical and Electronic EngineeringPhotonicsbusiness
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Ultrafast Carrier Redistribution in Single InAs Quantum Dots Mediated by Wetting-Layer Dynamics

2019

Optical studies of single self-assembled semiconductor quantum dots (QDs) have been a topic of intensive investigation over the past two decades. Due to their solid-state nature, their electronic and optical emission properties are affected by the particular crystal structure as well as many-body-carrier interactions and dynamics. In this work, we use a master equation for microstates (MEM) model to study the carrier capture and escape from single QDs under optical nonresonant excitation and under the influence of a two-dimensional (2D) carrier reservoir (the wetting layer). This model reproduces carrier dynamics from power-dependent and time-resolved microphotoluminescence experiments . Du…

Quantum opticsPhotoluminescenceMaterials sciencebusiness.industryMathematics::Operator AlgebrasQuantum dotsGeneral Physics and AstronomyPhysics::OpticsSingle-photon sourceLaserCondensed Matter::Mesoscopic Systems and Quantum Hall Effectlaw.inventionCondensed Matter::Materials ScienceOptical modulatorlawQuantum dotOptoelectronicsSemiconductor quantum dotsPhotonicsbusinessUltrashort pulseWetting layersemiconductor quantum dots master equation for microstates two-dimensional (2D) carrier reservoir carrier dynamics
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Complex quantum state generation and coherent control based on integrated frequency combs

2019

The investigation of integrated frequency comb sources characterized by equidistant spectral modes was initially driven by considerations towards classical applications, seeking a more practical and miniaturized way to generate stable broadband sources of light. Recently, in the context of scaling the complexity of optical quantum circuits, these on-chip approaches have provided a new framework to address the challenges associated with non-classical state generation and manipulation. For example, multi-photon and high-dimensional states were to date either inaccessible, lacked scalability, or were difficult to manipulate, requiring elaborate approaches. The emerging field of quantum frequen…

Quantum opticsPhotonbusiness.industryComputer sciencePhysics::OpticsNanophotonics Photonic integrated circuits Quantum entanglement Spontaneous emissionSettore ING-INF/02 - Campi Elettromagnetici02 engineering and technologyQuantum entanglementSettore ING-INF/01 - ElettronicaAtomic and Molecular Physics and OpticsFrequency combQC350020210 optoelectronics & photonicsCoherent controlQuantum state0202 electrical engineering electronic engineering information engineeringElectronic engineeringCoherent statesPhotonicsbusiness
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Generation and coherent manipulation of complex quantum states based on integrated frequency combs

2018

The investigation and use of integrated frequency comb sources (i.e. featured by equally-spaced discrete spectral modes) have recently provided a unique framework to address the challenges of generation and coherent manipulation of complex quantum states in on-chip devices. We exploit integrated frequency combs for generating entangled photon pairs, as well as multi-photon states, and high-dimensional (D-level, i.e. quDit) entangled photons. In particular, we manage to coherently manipulate such complex quantum systems by using telecommunications components (standard fiber telecom).

Quantum opticsPhysicsFrequency combPhotonPhoton entanglementbusiness.industryQuantum stateFiber (mathematics)Physics::OpticsOptoelectronicsNonlinear opticsbusinessQuantum2018 Photonics in Switching and Computing (PSC)
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Fabrication of a planar micro Penning trap and numerical investigations of versatile ion positioning protocols

2009

We describe a versatile planar Penning trap structure, which allows one to dynamically modify the trapping configuration almost arbitrarily. The trap consists of 37 hexagonal electrodes, each with a circumcircle diameter of 300 μm, fabricated in a gold-on-sapphire lithographic technique. Every hexagon can be addressed individually, thus shaping the electric potential. The fabrication of such a device with clean room methods is demonstrated. We illustrate the variability of the device by a detailed numerical simulation of a lateral and a vertical transport and simulate trapping in racetrack and artificial crystal configurations. The trap may be used for ions or electrons, as a versatile cont…

Quantum opticsQuantum PhysicsFabricationMaterials sciencebusiness.industryAtomic Physics (physics.atom-ph)DDC 530 / PhysicsGeneral Physics and AstronomyPhysics::OpticsFOS: Physical sciencesElectronPenning trapIonenfallePhysics - Atomic PhysicsTrap (computing)PlanarOptoelectronicsTrapped ionsddc:530Electric potentialPhysics::Atomic PhysicsQuantum informationbusinessQuantum Physics (quant-ph)
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Far-infrared laser on quantum dots created by electric-field focusing

2003

The new proposal of a far-infrared laser employing intraband transitions in the system of quantum dots is briefly described. The conditions for inversion of population for electrons in the quantum dot matrix created by an electric-field focusing in narrow GaAs/AlGaAs quantum well are discussed. The laser is planned to be pumped by periodically repeated rapid creation and destruction of the quantum dot matrix allowing for repeated filling of the dot levels with electrons from a quantum well. Some major results of the analysis of the kinetics of the electron-photon system are presented.

Quantum opticsbusiness.industryChemistryQuantum point contactCavity quantum electrodynamicsCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsAtomic and Molecular Physics and OpticsSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsQuantum dotQuantum dot laserElectro-absorption modulatorOptoelectronicsElectrical and Electronic EngineeringQuantum-optical spectroscopybusinessQuantum wellMicroelectronic Engineering
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Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques

2003

We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found broad application in semiconductor lasers and photonic integrated circuits (PICs). Extending such technology to GaInNAs/GaAs structures is highly desirable due to the technologically advantageous properties of this material system. Here, we investigate well-characterized GaInNAs quantum well material which has been annealed "to saturation" before QWI processing to allow unambiguous interpretation of results. After RTA at 700 degreesC for similar …

Quantum well intermixing GaInNAs Photonic integrated circuitsPhotoluminescenceMaterials scienceBand gapbusiness.industryPhotonic integrated circuitBioengineeringSemiconductor deviceSemiconductor laser theoryBiomaterialsSurface coatingMechanics of MaterialsOptoelectronicsPhotoluminescence excitationbusinessQuantum wellMaterials Science and Engineering: C
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Size Reduction of CdSe/ZnS Core−Shell Quantum Dots Photosensitized by Benzophenone: Where Does the Cd(0) Go?

2011

The size of core-shell CdSe/ZnS quantum dots can be decreased by using the combined action of an n,π* aromatic ketone and UVA light. Energy-dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy techniques gave information on the photosensitization mechanism and the eventual destiny of Cd(2+) and Se(2-) core ions. Our data support the electron transfer from the BP ketyl radical to Cd(2+), leading to Cd(0) and H(+), as well as to the recovery of benzophenone. Elemental Cd remains on the core and, eventually, can be oxidized to CdO. In addition, Se(2-) counterions disperse inside the solution mainly attached to protonated amine ligands. The Se(2-) combines with H(+), leadin…

Quenching (fluorescence)ChemistryAnalytical chemistryNanoparticleSurfaces and InterfacesCondensed Matter PhysicsPhotochemistrychemistry.chemical_compoundElectron transferKetylX-ray photoelectron spectroscopyQuantum dotElectrochemistryBenzophenoneGeneral Materials ScienceSpectroscopySpectroscopyLangmuir
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Extrinsic Effects on the Optical Properties of Surface Color Defects Generated in Hexagonal Boron Nitride Nanosheets

2021

Hexagonal boron nitride (hBN) is a wide-band gap van der Waals material able to host light-emitting centers behaving as single photon sources. Here, we report the generation of color defects in hBN nanosheets dispersed on different kinds of substrates by thermal treatment processes. The optical properties of these defects have been studied using microspectroscopy techniques and far-field simulations of their light emission. Using these techniques, we have found that subsequent ozone treatments of the deposited hBN nanosheets improve the optical emission properties of created defects, as revealed by their zero-phonon linewidth narrowing and reduction of background emission. Microlocalized co…

QuenchingMaterials sciencePhotoluminescencecolor defectsbusiness.industryThermal treatmentSubstrate (electronics)Dielectric2D materialshexagonal boron nitride; 2D materials; color defects; photoluminescence;interfacessymbols.namesakesymbolsOptoelectronicsphotoluminescenceGeneral Materials ScienceLight emissionhexagonal boron nitridevan der Waals forcePhotonicsbusinessResearch Article
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