Search results for "Toe"
showing 10 items of 3824 documents
Exciton quenching by diffusion of 2,3,5,6-tetrafluoro-7,7’,8,8’-tetra cyano quino dimethane and its consequences on joule heating and lifetime of org…
2013
In this Letter, the effect of F(4)-TCNQ insertion at the anode/hole transport layer (HTL) interface was studied on joule heating and the lifetime of organic light-emitting diodes (OLEDs). Joule heating was found to reduce significantly (pixel temperature decrease by about 10 K at a current density of 40 mA/cm(2)) by this insertion. However, the lifetime was found to reduce significantly with a 1 nm thick F(4)-TCNQ layer, and it improved by increasing the thickness of this layer. Thermal diffusion of F(4)-TCNQ into HTL leads to F(4)-TCNQ ionization by charge transfer, and drift of these molecules into the emissive layer caused faster degradation of the OLEDs. This drift was found to reduce w…
Increasing the efficiency of light-emitting electrochemical cells by limiting the exciton quenching
2013
ABSTRACTLight-emitting electrochemical cells (LECs) are one of the simplest electroluminescent devices. The possibility to be processed from solution and to operate with air-stable materials makes them an attractive alternative to organic light emitting diodes (OLEDs). Still their efficiencies are below those obtained in OLEDs. Additionally the best efficiencies were reported at low luminances and sustained for a short period of time. Here we show that for a LEC employing an orange-emitting charged iridium complex that is driven using a pulsed driving scheme high efficiencies of up to 20.5 cd A-1 can be obtained at high luminance and sustained over the device lifetime. It is also shown that…
Luminescence of coesite
2015
Coesite is a polymorph modification of crystalline silicon dioxide with a tetrahedral structure. The luminescence of a single crystal of synthetic coesite was studied under excitation using x-rays, an electron beam, and excimer lasers KrF (248 nm), ArF (193 nm) and F2 (157 nm). Luminescence bands in the regions of 2.5 eV and 4.4 eV appear. The blue band is dependent on temperature and is composed of decay kinetics. Three main decay times are revealed, exhibiting luminescence of a different nature in the same range of the spectrum. One is in the ns range of time with a time constant of about 2 ns. The two other decay times are in the regions of 5 μs and 700 μs. The 5 μs component is also see…
Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K
2017
The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…
On the operation of silicon photomultipliers at temperatures of 1–4 kelvin
2016
Abstract SiPM operation at cryogenic temperatures fails for many common devices. A particular type from Zecotek with deep channels in the silicon substrate instead of quenching resistors was tested at liquid helium temperature. Two similar types were thoroughly characterized from room temperature down to liquid nitrogen temperature by illuminating them with low light levels. At cryogenic temperatures the SiPMs show an unchanged rise-time and a fast recovery time, practically no after-pulses, and exhibit no increased cross-talk probability. Charge collection spectra were measured to extract the pixel gain and its variation, both comparable to room temperature at the same over-voltage. The qu…
Free Charge Carriers in Mixed Valency Oxides as Possible Mediators of Magnetoelectric Effect
2009
We show, that in a substance with mixed-valence ions, which can supply free carriers and have electric dipole and spin moments, three types of long-range order (ferromagnetic, ferroelectric and magnetoelectric (ME)) can occur at low temperatures. The origin of the effect is that free charge carriers can mediate the multiferroic behavior via spin – spin (RKKY), dipole-dipole and dipole - spin interactions. We show that there is an optimal carrier concentration, at which the strength of ME interaction is maximal and comparable to that of RKKY interaction. Our analysis shows that disorder and finite conductivity in the above substances does not suppress multiferroic effects.
Vertical transmission of naturally occurring Bunyamwera and insect-specific flavivirus infections in mosquitoes from islands and mainland shores of L…
2018
Background Many arboviruses transmitted by mosquitoes have been implicated as causative agents of both human and animal illnesses in East Africa. Although epidemics of arboviral emerging infectious diseases have risen in frequency in recent years, the extent to which mosquitoes maintain pathogens in circulation during inter-epidemic periods is still poorly understood. This study aimed to investigate whether arboviruses may be maintained by vertical transmission via immature life stages of different mosquito vector species. Methodology We collected immature mosquitoes (egg, larva, pupa) on the shores and islands of Lake Baringo and Lake Victoria in western Kenya and reared them to adults. Mo…
Radiation effects in nitride read-only memories
2010
Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…
Charge transfer in the novel donor-acceptor complexes tetra- and hexamethoxypyrene with tetracyanoquinodimethane studied by HAXPES
2012
Abstract The effect of charge transfer (CT) in complexes of the donors tetra - and hexamethoxyprene ( TMP and HMP ) with the classical acceptor tetracyanoquinodimethane ( TCNQ ) was studied using hard X-ray photoemission (HAXPES). Microcrystals of the complex were grown via vapour diffusion from donor–acceptor mixtures. The bulk sensitivity of HAXPES at a photon energy of 6 keV completely eliminates the problem of surface contamination for such delicate organic materials grown from solution. The donor molecules were produced using a novel synthesis route functionalizing polycyclic aromatic hydrocarbons at their periphery. For comparison, spectra were also taken from thin-film samples of the…
Image enhancement in photoemission electron microscopy by means of imaging time-of-flight analysis
2004
Abstract Photoemission electron microscopy (PEEM) is widely used in combination with synchrotron sources as a powerful tool to observe chemical and magnetic properties of metal and semiconductor surfaces. Presently, the resolution limit of these instruments using soft-X-ray excitation is limited to about 50 nm, because of the chromatic aberation of the electron optics used. Various sophisticated approaches have thus been reported for enhancing the spatial resolution in photoemission electron microscopy. This work demonstrates the use of a simple imaging energy filter based on electron time-of-flight (ToF) selection. The spatial resolution could be improved dramatically, even though the inst…