Search results for "Toe"

showing 10 items of 3824 documents

TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION

1992

An efficient numerical method for the solution of hot‐carrier transport equations describing transient processes in submicrometer semiconductor devices is proposed. The calculations of transient processes in submicrometer MOS transistor were carried out and compared with the results obtained by conventional drift‐diffusion model.

Energy balance equationMaterials sciencebusiness.industryApplied MathematicsNumerical analysisTransistorSemiconductor deviceComputer Science Applicationslaw.inventionComputational Theory and MathematicslawElectronic engineeringOptoelectronicsTransient (oscillation)Electrical and Electronic EngineeringbusinessCOMPEL - The international journal for computation and mathematics in electrical and electronic engineering
researchProduct

Electron-spectroscopic investigations on ternary HFS: CeT2X2

1997

Investigations of the electronic properties were carried out for ternary Ce-based heavy fermion systems. The well-ordered surfaces of HFS were prepared by MBE on W (110) with subsequent annealing. The layers are characterised by MEED, LEED, AES and XPS. For the electron-spectroscopic investigations, ARUPS and SPEELS were used. In the photoemission spectra, dispersion effects could be detected. By means of SPEELS, the dipole-forbidden Ce f-f transitions could be observed. The comparison of the energy loss spectra above and below the characteristic temperature T∗ reveals differences in the energy losses as well as in the asymmetries.

Energy lossMaterials scienceAnnealing (metallurgy)Analytical chemistryAngle-resolved photoemission spectroscopyElectronCondensed Matter PhysicsSpectral lineElectronic Optical and Magnetic MaterialsCondensed Matter::Materials ScienceX-ray photoelectron spectroscopyHeavy fermionElectrical and Electronic EngineeringAtomic physicsTernary operationPhysica B: Condensed Matter
researchProduct

IMPORTANCIA DE LA ENFERMERA ESCOLAR EN LA DETECCIÓN DE LA NEOPLASIA TESTICULAR

2011

En este artículo planteamos una revisión de la literatura en diferentes bases de datos (CINAHL, CUIDEN, MEDLINE) con el fin de valorar la importancia de la neoplasia testicular en la adolescencia y el papel fundamental del profesional de enfermería-, concretamente de la enfermera escolar, en la detección precoz de esta patología. Una vez analizado el tema y tras tomar conciencia de la importancia de enseñar prácticas de autoexploración testicular correctas, se ha concluido que la enfermera escolar no debe desarrollar únicamente una actividad asistencial, sino que entre sus funciones se debe contemplar la promoción de la salud y la prevención del cáncer testicular. Dentro del proceso educado…

Enfermera escolarAutoexploración testicularCàncer InfermeriaGeneral NursingNeoplasia testicularInfermeria en l'atenció primària
researchProduct

An experimental study on relationship between LED lamp characteristics and non image-forming

2017

The general aim of the experimental study, presented in this paper, was that to investigate the relationship between the characteristics of five different types of LED (Light Emitting Diode) lamps, which are nowadays those allowing the highest energy consumption reduction, and the humans non image-forming (NIF) reactions.

EngineeringEnvironmental Engineering0211 other engineering and technologiesEnergy Engineering and Power Technology02 engineering and technologySettore ING-INF/01 - ElettronicaIndustrial and Manufacturing EngineeringLed lamplaw.inventionReduction (complexity)03 medical and health sciences0302 clinical medicinelawCircadian system021105 building & constructionElectrical and Electronic EngineeringLightingSettore ING-IND/11 - Fisica Tecnica Ambientalebusiness.industryElectrical engineeringEnergy consumptionSettore ING-IND/33 - Sistemi Elettrici Per L'EnergiaLED lampOptoelectronicsbusiness030217 neurology & neurosurgeryLighting colorLight-emitting diode2017 IEEE International Conference on Environment and Electrical Engineering and 2017 IEEE Industrial and Commercial Power Systems Europe (EEEIC / I&CPS Europe)
researchProduct

CIGS PV Module Characteristic Curves Under Chemical Composition and Thickness Variations

2014

This paper analyzes how the electrical characteristics of a CIGS photovoltaic module are affected by the chemical composition and by the thickness variations of the CIGS absorber. The electrical characteristics here considered are the short circuit current, the open circuit voltage, the efficiency and the power peak. The chemical composition is varied by tuning the ratio between gallium and indium. This analysis has been performed by means of the wxAMPS software, developed by the University of Illinois. The above variations have been taken into account on a PV module made of 72 cells. This analysis has been carried out employing a PV module mathematical model developed and implemented by th…

EngineeringOpen-circuit voltagebusiness.industryPhotovoltaic systemchemistry.chemical_elementSettore ING-INF/02 - Campi ElettromagneticiSettore ING-IND/32 - Convertitori Macchine E Azionamenti ElettriciCopper indium gallium selenide solar cellsPhotovoltaic Modules characterizationSettore ING-INF/01 - ElettronicaPower (physics)CIGS Photovoltaic ModulechemistryElectronic engineeringOptoelectronicsGalliumbusinessMATLABShort circuitcomputerSettore ING-INF/07 - Misure Elettriche E ElettronicheIndiumcomputer.programming_language
researchProduct

Combined Analysis of OFDM-UWB Transmission in Hybrid Wireless-Optical Access Networks

2009

[EN] The hybrid wireless-optical transmission of ultra-wideband signals employing orthogonal frequency-division multiplexing modulation (OFDM) ultra-wideband (UWB) as defined in the ECMA-368 standard is experimentally analyzed in this letter. The OFDM-UWB signals provide 400 Mb/s per user at optical distances from 5 to 50 km on standard single-mode fiber (SSMF). The analysis includes the wireless radiation from 0 to 3 m after optical transmission. The results indicate a maximum error-vector-magnitude degradation of 2.5 dB measured at 1.5-m radio after 50-km SSMF optical transmission for the first two UWB channels. This degradation translates to 1-m maximum wireless-reach penalty.

EngineeringOrthogonal frequency-division multiplexingOptical communication02 engineering and technology01 natural sciencesMultiplexingTelecomunicació010309 optics020210 optoelectronics & photonicsTEORIA DE LA SEÑAL Y COMUNICACIONES0103 physical sciences0202 electrical engineering electronic engineering information engineeringElectronic engineeringWirelessElectrical and Electronic EngineeringComunicació i tecnologiaFiber-to-the-home (FTTH) networksOptical access networksAccess networkOptical communicationsbusiness.industrySingle-mode optical fiberAtomic and Molecular Physics and OpticsElectronic Optical and Magnetic MaterialsTransmission (telecommunications)Ultra-wideband (UWB)ModulationbusinessIEEE Photonics Technology Letters
researchProduct

A method for reducing the influence of quarter-wave plate errors in phase stepping photoelasticity

1998

The phase stepping technique has recently been applied to the automated analysis of photoelastic fringes to determine the isoclinic parameter and the relative retardation. Generally, in these methods the error of quarter-wave plates, due to common manufacturing tolerances, influences the determination of the isoclinic parameter and the fringe order. In this paper a new phase stepping method in which the influence of quarter-wave plate error is null on the isoclinic parameter and negligible on the fringe order is proposed. The theoretical results have been confirmed by experimental tests.

EngineeringPhotoelasticityOpticsMechanics of Materialsbusiness.industryApplied MathematicsMechanical EngineeringModeling and SimulationPhase (waves)businessWaveplate
researchProduct

Use of Automated Photoelasticity to Determine Stress Intensity Factors of Bimaterial Joints

2005

A new systematic experimental procedure has been developed to obtain the stress intensity factors governing the singular stress field that occurs near the intersection between the interface and free edges of bimaterial joints. A preliminary theoretical study of the singular stress field is carried out by the well-known Airy stress function method. The obtained stress laws are properly combined with the basic law of photoelasticity in order to define a procedure that permits the zone dominated by the singularity to be located and the stress intensity factors (SIFs) to be computed on the basis of full field data provided from automated photoelasticity. In particular, a systematic error analys…

EngineeringPhotoelasticitybusiness.industryApplied MathematicsMechanical EngineeringMathematical analysisStructural engineeringIntersection (Euclidean geometry)Stress fieldStress (mechanics)symbols.namesakeSingularityFourier transformAiry functionMechanics of MaterialsModeling and SimulationsymbolsbusinessStress intensity factor
researchProduct

Computer aided photoelasticity by an optimum phase stepping method

2002

In this paper an automated photoelastic method based on the phase stepping technique is described. It provides full-field maps of the isoclinic parameter and the relative retardation. The technique is based on processing six images of a photoelastic specimen acquired using plane and circularly polarized light. The number of acquisitions and the type of polariscope used in this approach have been chosen with the aim at reducing the influence of quarter wave plate errors and obtaining raw photoelastic data in a periodic form suitable for easy applications of automatic unwrapping routines.

EngineeringPhotoelasticitybusiness.industryMechanical EngineeringPhase (waves)Aerospace EngineeringPolarimeterImage processingWaveplateOpticsMechanics of MaterialsDigital image processingComputer-aidedbusinessCircular polarization
researchProduct

Synergistic Use of Electrochemical Impedance Spectroscopy and Photoelectrochemical Measurements for Studying Solid State Properties of Anodic HfO2

2017

Within the past years, intense research has been carried out on HfO2 as high k material, promising candidate to replace SiO2 as gate dielectric in CMOS based devices (1), and as metal oxide for resistive random access memory (ReRAM) (2). For both technological applications compact, uniform and flat oxides are necessary, and a detailed understanding of their physical properties as a function of the fabrication conditions is strongly. Hafnia performance can be significantly influenced by carrier trapping taking place at pre-existing precursors states (induced by oxygen vacancies, interstitial ions, impurities acting as dopants), or by self-trapping in a perfect lattice, where the potential we…

EngineeringSettore ING-IND/23 - Chimica Fisica Applicataanodizing HfO2 CMOS ReRAM Electrochemical Impedance Spectroscopy Photoelectrochemical Measurements Solid State Propertiesbusiness.industrySolid-stateAnodizing Hafnium oxide Nb doped HfO2 Electrochemical Impedance Spectroscopy Photocurrent Spectroscopy Solid State Properties CMOS ReRAMNanotechnologybusinessAnodeDielectric spectroscopy
researchProduct