Search results for "VOLTAGE"

Ionic Liquid-Based Electrolytes for Supercapacitor and Supercapattery

2019

There is a strong desire to replace or complement aqueous and organic electrolytes by ionic liquids (ILs) in electrochemical energy storage (EES) devices to achieve high operating voltages and hence high energy capacity. ILs are regarded as the inherent and competitive electrolytes since they were introduced to the electrochemical research community because they can overcome many disadvantages of the conventional aqueous and organic electrolytes, such as narrow potential windows, volatility, and flammability. This paper reviews critically the recent literatures of IL-based electrolytes used in supercapacitor, supercapattery, and micro-supercapacitor. Supercapattery is a generic term for var…

Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence

2007

The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…

Transient drift‐diffusion simulation of the open circuit voltage decay in ionic perovskite solar cells

2021

Effect of Organic Tin Compounds on Electric Properties of Model Membranes

2006

The objective of the present work was to investigate the effect of selected organic tin compounds and potassium chloride (used as a reference substance) on the trans-membrane electric voltage and electric resistance of model membranes, the latter being nitrocellulose filters impregnated with butylene ester of lauric acid. The increasing KCl concentration (in the measurement chambers) caused a rapid rise of the negative trans-membrane voltage, whose value stabilized afterwards. In the case of (C3H7)3SnCl an abrupt maximum of the negative voltage was observed followed by a monotonic drop to zero. In the case of highest concentrations of this compound the voltages, after having reached zero, c…

Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group

2021

In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.

Charging in Solitary, Voltage Biased Tunnel Junctions.

1996

Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film.

2014

We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of…

Primary thermometry with nanoscale tunnel junctions

1995

We have found current-voltage (I-V) and conductance (dI/dV) characteristics of arrays of nanoscale tunnel junctions between normal metal electrodes to exhibit suitable features for primary thermometry. The current through a uniform array depends on the ratio of the thermal energy kBT and the electrostatic charging energy E c of the islands between the junctions and is completely blocked by Coulomb repulsion at T = 0 and at small voltages eV/2 ≤ Ec. In the opposite limit, kBT ≫ Ec, the width of the conductance minimum scales linearly and universally with T and N, the number of tunnel junctions, and qualifies as a primary thermometer. The zero bias drop in the conductance is proportional to T…

An analog electronic interface to measure electrical conductivity in liquids

2005

Abstract Measuring conductivity in aqueous solutions is a problem which is not easy to solve due to the differences in mass and mobility that exist between ions conduction and electrons. Additionally, it is necessary to keep in mind the interaction processes electrode-solution. As a consequence, the electrolytic conductivity cell has to be polarized with alternating voltage of adequate amplitude and frequency in order to extract the correct information. In this paper an electronic conditioning circuit is presented which converts electric conductivity into a value of continuous voltage. A hardware solution is proposed to do the conductivity temperature compensation. Experimental results obta…

Dynamic response of thin-film semiconductors to AC voltage perturbations

2012

A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…