Search results for "Volt"

Perovskite-Perovskite Homojunctions via Compositional Doping.

2018

One of the most important properties of semiconductors is the possibility of controlling their electronic behavior via intentional doping. Despite the unprecedented progress in the understanding of hybrid metal halide perovskites, extrinsic doping of perovskite remains nearly unexplored and perovskite–perovskite homojunctions have not been reported. Here we present a perovskite–perovskite homojunction obtained by vacuum deposition of stoichiometrically tuned methylammonium lead iodide (MAPI) films. Doping is realized by adjusting the relative deposition rates of MAI and PbI2, obtaining p-type (MAI excess) and n-type (MAI defect) MAPI. The successful stoichiometry change in the thin films is…

Nanocrystal memories for FLASH device applications

2004

Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 μm FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also pro…

Controlling the dynamic behavior of light emitting electrochemical cells

2013

Abstract Light emitting electrochemical cells (LECs) present an attractive route towards cost efficient lighting applications. By utilizing ionic phosphorescent transition metal complexes, efficient electroluminescence can be realized from a single layer device using air stable electrodes. These devices achieve efficient charge carrier injection due to ion accumulation at the interface upon driving, resulting in a dynamic response upon device operation. Here we investigate the device operation by using fast current and luminance versus voltage sweeps during normal fixed bias operating. A universal set of JL–V curves can be identified in which different regimes are observable. The speed and …

High Voltage Metrology with Collinear Laser Spectroscopy

2018

We present results of laser spectroscopic high voltage measurements on the 5 ppm relative uncertainty level using a pump and probe scheme on Ca+ ions. With the two-stage laser interaction and with a reference measurement we can eliminate systematic effects like differences in contact potentials of electrode materials, thermo-electric voltages, and the unknown starting potential of the ions in the ion source. Our measurements are compatible with the 5 ppm precision limits of the high voltage dividers used for comparison and demonstrate an unprecedented increase in the accuracy of laser-based high voltage measurements by a factor of 20.

Combined heat and power generation with a HCPV system at 2000 suns

2015

In the framework of the FAE “Fotovoltaico ad Alta Efficienza” (“High Efficiency Photovoltaic”) Research Project funded by the Sicilian Region under the program PO FESR Sicilia 2007/2013 4.1.1.1, we have developed an innovative solar CHP system for the combined production of heat and power at the high concentration level of 2000 suns [1]. This work shows the experimental results obtained on FAE-HCPV modules and analyses the behaviour of the system. The solar radiation is concentrated on commercial InGaP/InGaAs/Ge triple-junction solar cells designed for intensive work. The primary optics is a rectangular off-axis parabolic mirror (with a size of 46x46 = 2116 cm2 in a projection normal to the…

CdTe Nanocrystal Synthesis in SiO 2 /Si Ion‐Track Template: The Study of Electronic and Structural Properties

2020

Performance of sensl C-Series SiPM with high photoelectron resolution at cryogenic temperatures

2016

The C-Series of silicon photomultipliers (SiPM) from SensL provides devices with a fast response and high performance at low cost. The device's ability to detect light at temperatures of liquid nitrogen (77K) and liquid helium (4 K) with high photoelectron resolution was demonstrated. Results include relative photon detection efficiency (PDE), gain, microcell capacitance, and cross-talk probability at different over-voltages, both at room and at cryogenic temperatures. At 77K the SiPM demonstrated significantly improved operating characteristics while at 4K the observed increase in break-down voltage, the reduction of PDE by a factor of 2-3, and the extensively dropped microcell capacitance…

Effect of driving method on the degradation of organic light emitting diodes

2003

Abstract Lifetime testing results are reported for organic light emitting diodes (OLEDs) having the structure ITO (anode)/ N , N ′-diphenyl- N , N ′-bis(3-methylphenyl)-1,1′-diphenyl-4,4′-diamine (TPD)/tris-(8-hydroxyquinoline)aluminum (AlQ)/Al (cathode) and operated using dc and pulsed waveforms for comparison. In ambient atmosphere non-encapsulated devices show a lifetime of about 70 h in pulsed operation at an initial luminance of 500 cd/m 2 , almost four times longer than in dc operation. A fast initial decay of luminance is observed for dc operation. It is most probably due to a combination of Joule heating and mobile ionic impurities migration within the OLED structure under the conti…

Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells

2021

This paper discusses and demonstrates the usefulness and prospects of using textured layers of indium phosphide as a material for space solar cells. Such designs improve the performance of the photovoltaic converter by increasing the effective area and surface roughness. Thus, it minimizes the background reflectivity of the surface. Textured layers on the InP surface were obtained by electrochemical etching using a bromous acid solution.

Band unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination

2008

Capacitance analysis of P3HT:PCBM bulk heterojunction solar cells, in dark and under illumination, shows a linear Mott-Schottky characteristic at moderate reverse bias, indicating p-doping of the organic blend. The flatband potential under illumination is displaced negatively about 0.6 V with respect to dark conditions. A basic photovoltaic model is developed to explain this, in terms of electron transfer via surface states at the metal/organic interface. Surface states with a slow exchange kinetics, become charged under illumination, unpinning the band and decreasing the depletion layer at the electron extraction contact. This becomes a major factor limiting the performance of bulk heteroj…