Search results for "Volt"

Hybrid coincidence and common fixed point theorems in Menger probabilistic metric spaces under a strict contractive condition with an application

2014

Abstract We prove some coincidence and common fixed point theorems for two hybrid pairs of mappings in Menger spaces satisfying a strict contractive condition. An illustrative example is given to support the genuineness of our extension besides deriving some related results. Then, we establish the corresponding common fixed point theorems in metric spaces. Finally, we utilize our main result to obtain the existence of a common solution for a system of Volterra type integral equations.

P-spaces and the Volterra property

2012

We study the relationship between generalizations of $P$-spaces and Volterra (weakly Volterra) spaces, that is, spaces where every two dense $G_\delta$ have dense (non-empty) intersection. In particular, we prove that every dense and every open, but not every closed subspace of an almost $P$-space is Volterra and that there are Tychonoff non-weakly Volterra weak $P$-spaces. These results should be compared with the fact that every $P$-space is hereditarily Volterra. As a byproduct we obtain an example of a hereditarily Volterra space and a hereditarily Baire space whose product is not weakly Volterra. We also show an example of a Hausdorff space which contains a non-weakly Volterra subspace…

ESR, electrochemical and cyclodextrin-inclusion studies of triazolopyridyl pyridyl ketones and dipyridyl ketones derivatives.

2008

Abstract The electron spin resonance (ESR) spectra of free radicals obtained by electrolytic reduction of triazolopyridyl pyridyl ketones and dipyridyl ketones derivatives were measured in dimethylsulfoxide (DMSO). The hyperfine patterns indicate that the spin density delocalization is dependent of the rings presented in the molecule. The electrochemistry of these compounds was characterized using cyclic voltammetry, in DMSO as solvent. When one carbonyl is present in the molecule one step in the reduction mechanism was observed while two carbonyl are present two steps were detected. The first wave was assigned to the generation of the correspondent free radical species, and the second wave…

Stochastic response of MDOF wind-excited structures by means of Volterra series approach

1998

Abstract The role played by the quadratic term of the forcing function in the response statistics of multi-degree-of-freedom (MDOF) wind-excited linear-elastic structures is investigated. This is accomplished by modeling the structural response as a Volterra series up to the second order and neglecting the wind-structure interaction. In order to reduce the computational effort due to the calculation of a large number of multiple integrals, required by the used approach, a recent model of the wind stochastic field is adopted.

Structural quality of CH3NH3PbI3 perovskites for photovoltaic applications analyzed by electron microscopy techniques

2016

Performance Comparison of modified modulation Techniques for Quasi-Z-Source Converters

2020

The single-stage converters represent an innovation in the field of power electronics thanks their features. Aim of this work consists in the improvement of the performances of quasi-Z-Source converters by adopting a modified modulation technique, which is based on the Maximum Constant Boost Control (MCBC) and Switching Frequency Optimal (SFO). The results in terms of voltage stress and harmonic content are compared with those obtained with conventional techniques, demonstrating the effectiveness of the proposed modulation scheme.

Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K

2017

The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…

ACTION POTENTIAL, MEMBRANE CURRENTS AND FORCE OF CONTRACTION IN MAMMALIAN HEART MUSCLE FIBRES TREATED WITH QUINIDINE

1978

The effects of quinidine on electrical and mechanical activity were investigated in atrial and/or ventricular heart muscle preparations from guinea pigs and cats. Quinidine (1--100 micrometer) exerted negative inotropic effects in papillary muscles from guinea pigs and cats. In guinea-pig left atria, a positive inotropic effect was superimposed on the negative inotropic effect in response to quinidine. Quinidine (100 micrometer) prolonged the duration of the action potential in guinea-pig atria but shortened it in guinea-pig ventricular muscle. In cat papillary muscles, the late repolarization was markedly prolonged by quinidine, but virtually no change of the plateau phase was observed. Th…

Backward solution of PV nodes in radial distribution networks

2009

In this paper an iterative backward methodology to solve radial distribution networks with fixed voltage (PV) nodes and with constant power loads or mixed loads (with at least one component with constant power) is proposed. The method developed, although deriving conceptually from the backward/forward (b/f) methodology, presents only the backward phase in which all the network variables are evaluated. In themethods developed up until nowfor the solution of such systems, PV nodes are taken into account at the end of each iteration by evaluating, based on the known quantities of the network, the unknowns associated with PV nodes. In the methodology developed here the unknowns relevant to PV n…

Radiation effects in nitride read-only memories

2010

Abstract We report on the influence of different types of radiation on the nitride read-only memories (NROM®). The memory cells were irradiated by light ions (Boron), X-rays and γ-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM® cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remai…