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Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
2018
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…
Microscratch testing method for systematic evaluation of the adhesion of atomic layer deposited thin films on silicon
2016
The scratch test method is widely used for adhesion evaluation of thin films and coatings. Usual critical load criteria designed for scratch testing of coatings were not applicable to thin atomic layer deposition (ALD) films on silicon wafers. Thus, the bases for critical load evaluation were established and the critical loads suitable for ALD coating adhesion evaluation on silicon wafers were determined in this paper as LCSi1, LCSi2, LCALD1, and LCALD2, representing the failure points of the silicon substrate and the coating delamination points of the ALD coating. The adhesion performance of the ALD Al2O3, TiO2, TiN, and TaCN+Ru coatings with a thickness range between 20 and 600 nm and dep…
Stealth dicing with Bessel beams and beyond
2016
In the context of laser cutting of transparent materials, we investigate glass cleaving with Bessel beams and report that a modification of the beam with 3 main lobes drastically enhances cleavability and reduces defects.