Search results for "Wire"
showing 10 items of 1383 documents
High-Density Arrays of Germanium Nanowire Photoresistors
2006
Here we present for the first time a study of the photoresistive properties and dynamics of ordered, high-density arrays of germanium nanowire photoresistors. Germanium is a wellknown semiconducting material with an indirect bandgap, Eg, of approximately 0.66 eV (temperature T = 300 K) and has been widely used for the fabrication of photodetectors, radiation detectors, charged particle and photon tracking devices, far-infrared photoresistors, and numerous other devices. During the last few years there has also been increasing interest in the use of nanostructures (quantum dots and wires) of both germanium and silicon as materials for potential applications in sensors, nanophotonics, and nan…
The synthesis of matrices of embedded semiconducting nanowires.
2004
In this work we report how single crystal nanowires can be assembled into regular arrays using mesoporous thin films to define the architecture. Mesoporous thin films were prepared by a sol-gel method. These provide films of very regular structure and dimensions. The films produced in this way have almost single crystal like structures and can also exhibit strong epitaxy to the underlying silicon substrate. The films are subjected to a supercritical fluid (SCF) environment in which a precursor is decomposed to yield nanowires of metals, semiconductors or oxides. Using these SCF conditions, pore filling is complete and the products are nanowires which are single crystals and structurally ali…
Unexpected magnetism in nanomaterials
2013
Conventional magnetic order in a material requires the partially filled d or f bands. The exchange interactions between the electrons in these partially filled bands give rise to a magnetic order. However, the discovery of unexpected magnetism observed in some nanomaterials, which have the d and f shells either completely empty or full, has challenged our understanding of magnetism in conventional materials. The magnetism in nanomaterials shows the effects of reduced dimensions, reduced coordination of atoms at the surface and some quantum effects which dominate at low dimensions. In this review paper we give a brief review and discuss the unexpected magnetism experimentally observed and/or…
SnCo nanowire array as negative electrode for lithium-ion batteries
2011
Abstract Amorphous SnCo alloy nanowires (NWs) grown inside the channels of polycarbonate membranes by potentiostatic codeposition of the two metals (SnCo- PM ) were tested vs. Li by repeated galvanostatic cycles in ethylene carbonate-dimethylcarbonate – LiPF 6 for use as negative electrode in lithium ion batteries. These SnCo electrodes delivered an almost constant capacity value, near to the theoretical for an atomic ratio Li/Sn of 4.4 over more than 35 lithiation–delithiation cycles at 1 C. SEM images of fresh and cycled electrodes showed that nanowires remain partially intact after repeated lithiation–delithiation cycles; indeed, several wires expanded and became porous. Results of amorp…
Some aspects of formation and tribological properties of silver nanodumbbells.
2013
In this paper, metal nanodumbbells (NDs) formed by laser-induced melting of Ag nanowires (NWs) on an oxidized silicon substrate and their tribological properties are investigated. The mechanism of ND formation is proposed and illustrated with finite element method simulations. Tribological measurements consist in controllable real-time manipulation of NDs inside a scanning electron microscope (SEM) with simultaneous force registration. The geometry of NDs enables to distinguish between different types of motion, i.e. rolling, sliding and rotation. Real contact areas are calculated from the traces left after the displacement of NDs and compared to the contact areas predicted by the contact m…
(Ga,In)P nanowires grown without intentional catalyst
2015
Abstract We have grown (Ga,In)P nanowires through the MOCVD method without a intentional catalyst. The organometallic precursor triethylgallium ( ( C 2 H 5 ) 3 Ga ) , used as Ga source, is transported by the N 2 gas carrier to the reactor chamber where reacts with the InP vapor pressure producing the nanowires. Two different reactor pressures (70 and 740 Torr) were used leading to nanowires with different In contents. The nanowires are straight or wool-like and exhibit a twinned structure. They emit an intense orange to red color visible even to the naked eyes. Interface tunneling process at Ga 1 − x In x P / Ga 1 − y In y P interfaces ( x ≠ y ) is proposed to explain this efficient light e…
Shifting the Photoresponse of ZnO Nanowires into the Visible Spectral Range by Surface Functionalization with Tailor-Made Carbon Nanodots
2018
We report on the surface functionalization of ZnO nanowires (NWs) with specifically synthesized carbon nanodots (C-dots, CDs) that allows us to shift the photoresponse of the NWs far into the visib...
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
Erratum: Polarized and resonant Raman spectroscopy on single InAs nanowires (vol 84, 085318, 2011)
2012
We found out that the polar pattern for the zinc-blende InAs LO mode displayed in Fig. 2(b) of our original paper represents the backscattering Raman intensities from a (11¯2) top surface and not as stated in the original manuscript from a (110) top surface.In the latter the LO mode is forbidden for all configurations.