Search results for "absorption."
showing 10 items of 2682 documents
Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires
2001
InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.
Conformational disorder and optical properties of point defects in vitreous silica
2004
Abstract Disordered systems are characterized by the presence of local conformational heterogeneity, which reflects the complex landscape of the potential energy of the vitreous state. Optical properties of defects embedded in a vitreous matrix are also determined by the interaction with the surrounding environment; so the conformational disorder of the system induces spectral inhomogeneity. As a consequence, detailed experimental investigation of absorption and photoluminescence bands can give information on configurational substates around the chromophore. We focused our attention on B-type optical activity in silica glasses, characterized by a singlet emission and a triplet emission, conne…
Luminescence Efficiency of Si/SiO 2 Nanoparticles Produced by Laser Ablation
2019
Photoluminescence properties of Si(core)/SiO 2 (shell) nanoparticles produced by pulsed laser ablation in aqueous solution are investigated with the purpose to highlight the microscopic processes that govern the emission brightness and stability. Time resolved spectra evidence that these systems emit a µs decaying band centered around 1.95 eV, that is associated with the radiative recombination of quantum-confined excitons generated in the Si nanocrystalline core. Both the quantum efficiency and the stability of this emission are strongly dependent on the pH level of the solution, that is changed after the laser ablation is performed. They enhance in acid environment because of the H + pass…
Conformational heterogeneity of the point defects in silica: The lifetime of the phosphorescence band at 2.7 eV
2008
We have measured the excitation and emission energy dependence of the lifetimes of the 2.7 eV photoluminescence band associated to oxygen deficient centers in silica glasses. The non-exponential behavior of this time decay is consistent with intrinsic conformational heterogeneity of these point defects in the amorphous matrix. Accordingly, we have analyzed the data in terms of a radiative rates distribution. Moreover, both surface and bulk typologies of these point defects have been studied. The mean value of the lifetime distribution of the surface defects increases from 12 to 15 ms varying the excitation energy from 4.6 to 5.2 eV, and it increases from 14 to 15 ms in the emission energy i…
Luminescence properties of LiGaO2 crystal
2017
The study was supported by the Latvia-Lithuania-Taiwan research project “Nonpolar ZnO thin films: growth-related structural and optical properties” (Latvia: LV-LT-TW/2016/5 , Lithuania: TAP LLT 02/2014 , Taiwan: MOST 103-2923-M-110-001-MY3 ).
Optical properties of thin films of ZnO prepared by pulsed laser deposition
2004
In this paper we report on the structural features and optical properties of wurtzite ZnO films epitaxially grown on sapphire, fluorite and mica substrates by means of pulsed laser deposition (PLD). Post-deposition annealing results in a clear improvement of the film quality, reflected by the small width of the exciton-related lines in both the absorption and the photoluminescence spectra. Photoluminescence spectra revealed a multi-line structure which is identified in term of free excitons and excitons complexes with neutral donors and deep centers. The relative intensity of the PL lines mainly depends on the nature of the substrate used. Concerning optoelectronic applications it is especi…
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
2007
We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified …
Photoluminescence in ZnO:Co2+ (0.01%–5%) Nanoparticles, Nanowires, Thin Films, and Single Crystals as a Function of Pressure and Temperature: Explori…
2014
This work investigates the electronic structure and photoluminescence properties of Co2+-doped ZnO and their pressure and temperature dependences through high-resolution absorption and emission spe...
The effect of quantum size confinement on the optical properties of PbSe nanocrystals as a function of temperature and hydrostatic pressure
2013
A study based on photoluminescence and absorption measurements as a function of temperature and pressure for PbSe nanocrystals with sizes in the range 3–13 nm reveals the influence of size quantum confinement on the observed variation. In the case of the temperature variation, the effective bandgap changes from showing a positive rate of change to showing a negative one (for a quantum dot 3 nm in diameter), which can be accounted for by incorporating a linear variation of the carrier effective masses into a simple calculation of the exciton ground state in the quantum dot. In the case of the pressure variation, we observe a clear inverse correlation between the absolute value of the pressur…
The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films
2009
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a fun…