6533b859fe1ef96bd12b7809

RESEARCH PRODUCT

Optical transitions and excitonic recombination in InAs/InP self-assembled quantum wires

Luisa GonzálezJuan P. Martínez-pastorAlberto García-cristóbalJorge M. GarciaBenito Alén

subject

PhotoluminescenceIII-V semiconductorsPhysics and Astronomy (miscellaneous)ExcitonCondensed Matter::Materials ScienceIndium compoundsMonolayerLight absorptionAbsorption (electromagnetic radiation)QuantumPhotoluminescencePhysicsAtmospheric escapebusiness.industryQuantum wireSelf-assemblyInterface statesCondensed Matter::Mesoscopic Systems and Quantum Hall EffectLight polarisationSemiconductor quantum wiresOptoelectronicsExcitonsSelf-assemblyNonradiative transitionsbusiness

description

InAs self-assembled quantum wire structures have been grown on InP substrates and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transitions in each sample are consistent with wires of different heights, namely from 6 to 13 monolayers. The nonradiative mechanism limiting the emission intensity at room temperature is related to thermal escape of carriers out of the wires.

10.1063/1.1379991http://hdl.handle.net/10261/25672