Search results for "adiation effects"

Proton Direct Ionization in Sub-Micron Technologies : Test Methodologies and Modelling

2023

Two different low energy proton (LEP) test methods, one with quasi-monoenergetic and the other with very wide proton beam energy spectra, have been studied. The two test methodologies have been applied to devices that were suggested from prior heavy-ion tests to be sensitive to proton direct ionization (PDI). The advantages and disadvantages of the two test methods are discussed. The test method using quasi-monoenergetic beams requires device preparation and high energy resolution beams, but delivers results that can be interpreted directly and can be used in various soft error rate (SER) calculation methods. The other method, using a heavily degraded high energy proton beam, requires littl…

Thermal bleaching of gamma-induced-defects in optical fibers

2012

International audience; Ge-doped and F-doped gamma-irradiated fibers with a maximum accumulated dose of 10 MGy were subjected to isochronal annealing treatments up to 750°C. The thermal treatment influence on the point defect generation and transformation were investigated through Radiation Induced Attenuation (RIA) changes in the visible and IR spectral domains. The thermal bleaching of gammainduced-defects depends on both temperature and composition of optical fibers.

Durcissement aux radiations de fibres optiques dopées terres rares et d'amplificateurs 'a fibres optiques

2011

National audience; Cette étude vise à comprendre les effets d'une irradiation Ȗ sur les propriétés optiques et structurales des fibres dopées aux Terres Rares en vue de leur utilisation dans des amplificateurs à fibre réalisés pour des applications spatiales. L'enjeu majeur de durcissement de ces composants est abordé via des techniques telles que le chargement en hydrogène et/ou le co-dopage au Cérium du cœur des fibres optiques. L'identification des centres responsables de l'atténuation induite par irradiation et la compréhension des mécanismes de dégradation mis en jeu sont des étapes indispensables au développement de ces fibres.

Laser guns and hot plates

2005

Radiation-induced effects in silica based glasses: experimental and theoretical results

2008

Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes

2016

Under heavy-ion exposure at sufficiently high reverse bias voltages silicon carbide (SiC) Schottky diodes are observed to exhibit gradual increases in leakage current with increasing ion fluence. Heavy-ion exposure alters the overall reverse current-voltage characteristics of these diodes, leaving the forward characteristics practically unchanged. This paper discusses the charge transport mechanisms in the heavy-ion damaged SiC Schottky diodes. A macro model, describing the reverse current-voltage characteristics in the degraded SiC Schottky diodes is proposed. peerReviewed

Impact of Gamma Radiation on Dynamic R

2019

GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (RON_dyn) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (RDSON) char…