Search results for "alumiini"
showing 10 items of 30 documents
A liquid alkoxide precursor for the atomic layer deposition of aluminum oxide films
2020
For large-scale atomic layer deposition (ALD) of alumina, the most commonly used alkyl precursor trimethylaluminum poses safety issues due to its pyrophoric nature. In this work, the authors have investigated a liquid alkoxide, aluminum tri-sec-butoxide (ATSB), as a precursor for ALD deposition of alumina. ATSB is thermally stable and the liquid nature facilitates handling in a bubbler and potentially enables liquid injection toward upscaling. Both thermal and plasma enhanced ALD processes are investigated in a vacuum type reactor by using water, oxygen plasma, and water plasma as coreactants. All processes achieved ALD deposition at a growth rate of 1-1.4 angstrom/cycle for substrate tempe…
Successive alkalinity producing system for the treatment of acid sulphate soil runoff: preliminary results of a field trial
2005
A successive alkalinity producing system (SAPS) has been investigated as a potential passive treatment option for acid, metal containing runoff from acid sulphate soil. A pilot-scale system was installed at an agricultural land site in Rintala embankment area in mid-western Finland. The experimental layout consists of three parallel treatment units: two different SAPS cells and one limestone-filled cell for comparison of performance. The SAPS cells are composed of a bottom layer of limestone and a top layer of compost supplemented with sand. One of the SAPS cells contains sulphate-rich, waste gypsum mixed with the compost layer in order to enhance the metal reduction by sulphate reducing-ba…
In-situ annealing characterization of atomic-layer-deposited Al2O3 in N2, H2 and vacuum atmospheres
2019
Tarkista embargo, kun artikkeli julkaistu. Atomic-layer-deposited Al 2 O 3 films can be used for passivation, protective, and functional purposes in electronic devices. However, as-deposited, amorphous alumina is susceptible to chemical attack and corrosion during manufacturing and field-use. On the contrary, crystalline Al 2 O 3 is resistant against aggressive chemical treatments and corrosion. Here, high-temperature treatments in N 2 , H 2 , and vacuum were used to crystallize alumina which exhibited different crystalline phases. The annealing process was monitored continuously in situ by measuring the film temperature and surface reflectance to understand the crystallization kinetics. Ex…
Correlation of aluminum doping and lithiation temperature with electrochemical performance of LiNi1-xAlxO2 cathode material
2022
Abstract This article presents a process for producing LiNi1-xAlxO2 (0 < × < 0.05) cathode material with high capacity and enhanced cycle properties of 145 mAh/g after 600 cycles. The LiNi1-xAlxO2 (0 < × < 0.05) cathode material is prepared by mixing coprecipitated Ni(OH)2 with LiOH and Al(OH)3, followed by lithiation at temperature range of 650–710 °C, after which any residual lithium from lithiation is washed from the particle surfaces. Electrochemical performance was studied within full-cell and half-cell application; in addition, different material characterization methods were carried out to explain structure changes when certain amount of aluminum is introduced in the …
Improved stability of black silicon detectors using aluminum oxide surface passivation
2021
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode characteristics. In our case, the induced junction is formed using n-type silicon and atomic-layer deposited aluminum oxide (Al2O3), which contains a large negative fixed charge. We compare the results with corresponding planar pn-junction detectors passivated with either with silicon dioxide (SiO2) or Al2O3. The results show that the induced junction detectors remain stable as their responsivity remains nearly unaffected during the electron beam…
Aluminum oxide/titanium dioxide nanolaminates grown by atomic layer deposition: Growth and mechanical properties
2017
Atomic layer deposition (ALD) is based on self-limiting surface reactions. This and cyclic process enable the growth of conformal thin films with precise thickness control and sharp interfaces. A multilayered thin film, which is nanolaminate, can be grown using ALD with tuneable electrical and optical properties to be exploited, for example, in the microelectromechanical systems. In this work, the tunability of the residual stress, adhesion, and mechanical properties of the ALD nanolaminates composed of aluminum oxide (Al2O3) and titanium dioxide (TiO2) films on silicon were explored as a function of growth temperature (110-300 C), film thickness (20-300 nm), bilayer thickness (0.1-100 nm),…
Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon
2019
Abstract Aluminum oxynitride (AlOxNy) films with different nitrogen concentration are prepared by thermal atomic layer deposition (ALD) for flexible nano-textured silicon (NT-Si) surface passivation. The AlOxNy films are shown to exhibit a homogeneous nitrogen-doping profile and the presence of an adequate amount of hydrogen, which is investigated by Time-of-Fight Elastic Recoil Detection Analysis (ToF-ERDA). The effective minority carrier lifetimes are measured after the NT-Si surface passivation; the minimum surface recombination velocity (SRV) of 5 cm-s−1 is achieved with the AlOxNy film in comparison to the Al2O3 and AlN films (SRV of 7–9 cm-s−1). The better SRV with AlOxNy film is due …
High-precision mass measurements of 25Al and 30P at JYFLTRAP
2016
The masses of the astrophysically relevant nuclei 25Al and 30P have been measured with a Penning trap for the first time. The mass-excess values for 25Al ( $\Delta = -8915.962(63)$ keV) and 30P ( $\Delta = -20200.854(64)$ keV) obtained with the JYFLTRAP double Penning trap mass spectrometer are in good agreement with the Atomic Mass Evaluation 2012 values but $ \approx$ 5-10 times more precise. A high precision is required for calculating resonant proton-capture rates of astrophysically important reactions 25Al (p, $ \gamma$ )26Si and 30P(p, $ \gamma$ )31S . In this work, $ Q_{(p,\gamma)} = 5513.99(13)$ keV and $ Q_{(p,\gamma)} = 6130.64(24)$ keV were obtained for 25Al and 30P , respectivel…
Ozone-Based Atomic Layer Deposition of Al2O3 from Dimethylaluminum Chloride and Its Impact on Silicon Surface Passivation
2017
Dimethylaluminum chloride (DMACl) as an aluminum source has shown promising potential to replace more expensive and commonly used trimethylaluminum in the semiconductor industry for atomic layer deposited (ALD) thin films. Here, the Al2O3 DMACl-process is modified by replacing the common ALD oxidant, water, by ozone that offers several benefits including shorter purge time, layer-by-layer growth, and improved film adhesion. It is shown that the introduction of the ozone instead of water increases carbon and chlorine content in the Al2O3, while long ozone pulses increase the amount of interfacial hydrogen at silicon surface. These are found to be beneficial effects regarding the surface pass…
Progress on nuclear reaction rates affecting the stellar production of 26Al
2023
Abstract The radioisotope 26Al is a key observable for nucleosynthesis in the Galaxy and the environment of the early Solar System. To properly interpret the large variety of astronomical and meteoritic data, it is crucial to understand both the nuclear reactions involved in the production of 26Al in the relevant stellar sites and the physics of such sites. These range from the winds of low- and intermediate-mass asymptotic giant branch stars; to massive and very massive stars, both their Wolf–Rayet winds and their final core-collapse supernovae (CCSN); and the ejecta from novae, the explosions that occur on the surface of a white dwarf accreting material from a stellar companion. Several r…