Search results for "amorphous"
showing 10 items of 790 documents
Diffraction-efficiency oscillations in amorphous As_2S_3 films
1999
An experimental study of the holographic gratings recorded in nonannealed, thermally with time relaxed amorphous As2S3 films by 514.5-nm light in the presence of 632.8-nm readout light is carried out. The dependences of the maximal first-order diffraction efficiency on the holographic grating period was studied in a wide range of periods, from 0.40 to 70.0 µm. A peculiar oscillatory diffraction-efficiency temporal behavior occurring under certain conditions is reported. The obtained results are discussed in terms of photoinduced structural changes, relaxational structural changes, photoinduced anisotropy, and photoinduced recharging of the localized states in the bandgap. The diffraction-ef…
Model of holographic recording in amorphous chalcogenide films using subband-gap lightat room temperature
1997
The subband-gap light holographic recording in amorphous as-evaporated ${\mathrm{As}}_{2}$${\mathrm{S}}_{3}$ films at room temperature is experimentally studied. Properties are considerably different from those of usual holographic recording based on the band-gap light induced structural changes. The most important characteristic features of this nonpermanent recording include photoinduced refractive index increase, weak photobleaching, the absence of the photoinduced thickness changes, light polarization dependence, large exposures, holographic grating shifts during the exposure and a peculiar two maxima spatial frequency response. The first order diffraction efficiency up to 4.1% is achie…
Amorphous silica between confining walls and under shear: a computer simulation study
2002
Molecular dynamics computer simulations are used to investigate a silica melt confined between walls at equilibrium and in a steady-state Poisseuille flow. The walls consist of point particles forming a rigid face-centered cubic lattice and the interaction of the walls with the melt atoms is modelled such that the wall particles have only a weak bonding to those in the melt, i.e. much weaker than the covalent bonding of a Si-O unit. We observe a pronounced layering of the melt near the walls. This layering, as seen in the total density profile, has a very irregular character which can be attributed to a preferred orientational ordering of SiO4 tetrahedra near the wall. On intermediate lengt…
AMORPHOUS SEMICONDUCTOR-ELECTROLYTE JUNCTION. A NEW INTERPRETATION OF THE IMPEDANCE DATA OF AMORPHOUS SEMICONDUCTING FILMS ON METALS.
1986
On the basis of the theory of amorphous semiconductor Schottky barrier an equivalent electrical circuit of the amorphous oxide film/electrolyte interface is proposed.—The analytical expressions for the equivalent conductance and capacitance of the barrier are reported in the hypothesis of a constant density of states within the mobility gap.—According to this model, the semiconducting properties and the impedance behaviour at different frequencies of anodic oxide films on Niobium are interpreted by taking into account the amorphous nature of the films.—An explanation for the anomalous behaviour of the Mott-Schottky plots usually observed with amorphous anodic oxide films is presented.—The p…
<title>Structure-relaxation-induced peculiarities of the holographic recording in amorphous As<formula><inf><roman>2</roma…
1997
The results of the experimental study of holographic recording in a-As2S3 films are reported such as exposure and intensity dependencies, spatial frequency dependence. Several peculiarities are found including recording intensity threshold, nonmonotonical intensity dependencies, nonlinear exposure curves, the change of the spatial frequency response due to films aging. These peculiarities are explained in terms of phenomenological model which is based on the simultaneous action of the photostructural changes and the relaxational structural changes.© (1997) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Phonon contribution to the absorption of ultrasound in amorphous solids at moderately low temperatures
1998
Abstract Sound absorbtion in amorphous solids is considered to be due to the scattering of sound waves from the thermal phonons. It is shown that the dependence of the absorption coefficient on the temperature displays a maximum in the interval 10≲T≲100 K . The frequency dependence of the absorption coefficient is investigated. Numerical calculations for amorphous Mg and Zn illustrate the theoretical results.
Dynamic response of thin-film semiconductors to AC voltage perturbations
2012
A theoretical treatment of a Schottky barrier dynamic response is developed on the basis of a general model of a semiconductor with thickness comparable in length to the space charge region width. It is shown that, when the space charge region approaches the metal/semiconductor interface, the electric field at this interface, induced by the charge accumulated on the metal, becomes significant with respect to the electric field induced by the charge accumulated on the semiconductor. Under this condition, the total capacitance of the Schottky barrier becomes independent of the polarization potential and tends to the value ε/L, like in a pure dielectric insulator. The term thin film is intende…
Capacitance study of thin film SnO2:F/p-type a-Si:H heterojunctions
2011
Abstract We characterized SnO 2 :F/p-type a-Si:H heterojunctions by current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature to determine the junction parameters. Samples with circular geometry and different diameters were characterized. The current scales with the junction area, and the current density J as a function of the voltage V is a slightly asymmetric curve with a super-linear behaviour (cubic law) for high voltages. Using a transmission line model valid for devices with circular geometry, we studied the effects of the SnO 2 :F resistivity on the measured capacitance when the SnO2:F layer works as an electrical contact. The measured C-V curve allows us t…
Physical Cross Links in Amorphous PET, Influence of Cooling Rate and Ageing
2003
A Continuous Cooling Transformation (CCT) procedure can be used to distinguish the initial “state” of the amorphous PET samples produced upon solidification from the melt at different cooling rates. The material frozen at this stage behaves as a rubber when brought above the Tg due to the onset of physical cross links. The rubber is not a stable network, however, since physical cross links may eventually dissolve. Their size distribution, and possibly their number, depend on cooling rate and ageing. Some may be even stable above the glass transition and act as nuclei for further crystallization from the glass. Upon increasing cooling rate, size distribution becomes smaller and stability of …
Density functional simulations of structure and polymorphism in Ga/Sb films.
2013
Thin films of gallium/antimony alloys are promising candidates for phase change memories requiring rapid crystallization at high crystallization temperatures. Prominent examples are the stoichiometric form GaSb and alloys near the eutectic composition GaSb(7), but little is known about their amorphous structures or the differences between the 'as-deposited' (AD) and 'melt-quenched' (MQ) forms. We have generated these structures using 528-atom density functional/molecular dynamics simulations, and we have studied in detail and compared structural parameters (pair distribution functions, structure factors, coordination numbers, bond and ring size distributions) and electronic properties (dens…