Search results for "amorphous"
showing 10 items of 790 documents
Quantification of low levels of amorphous content in maltitol
2004
A method for the quantification of low levels of amorphous content of maltitol with hyper-DSC (high speed DSC) was developed. The method is based on the fact that the change of specific heat ( � Cp) at the glass transition is linearly proportional to the amorphous content. Twelve synthetic mixtures with various degrees of crystalline and amorphous maltitol were prepared. � Cp was determined at both fictive and
Cobalt aluminate spinel-mullite composites synthesized by sol-gel method
1997
Abstract CoAl 2 O 4 spinel-mullite composites were prepared by double substitution of Al by Ti and Ni in stoichiometric 3:2 mullite. Gels with compositions 3(Al 2 − 2 x Co x Ti x O 3 )·2SiO 2 (x = 0.025, 0.05 and 0.2) and 3(Al 2 − 2 x M x O 3 )·2SiO 2 (x = 0.05; M = Co 2+ or Ti 4+ ) were synthesized by sol-gel techniques. The structure of the gels was investigated by infra-red spectroscopy. Heating gels at 750 °C produced an amorphous silicoaluminate network. The reaction sequence was investigated by differential thermal analysis, X-ray diffraction and ultraviolet-visible spectroscopy. All samples crystallized at temperatures lower than 1000 °C from the amorphous state. Al-Si spinel and/or …
Coefficient of thermal expansion and elastic modulus of thin films
1999
The coefficient of thermal expansion (CTE), biaxial modulus, and stress of some amorphous semiconductors (a-Si:H, a-C:H, a-Ge:H, and a-GeCx:H) and metallic (Ag and Al) thin films were studied. The thermal expansion and the biaxial modulus were measured by the thermally induced bending technique. The stress of the metallic films, deposited by thermal evaporation (Ag and Al), is tensile, while that of the amorphous films deposited by sputtering (a-Si:H, a-Ge:H, and a-GeCx:H) and by glow discharge (a-C:H) is compressive. We observed that the coefficient of thermal expansion of the tetrahedral amorphous thin films prepared in this work, as well as that of the films reported in literature, depen…
Precursor-mediated crystallization process in suspensions of hard spheres.
2010
We report on a large scale computer simulation study of crystal nucleation in hard spheres. Through a combined analysis of real and reciprocal space data, a picture of a two-step crystallization process is supported: First dense, amorphous clusters form which then act as precursors for the nucleation of well-ordered crystallites. This kind of crystallization process has been previously observed in systems that interact via potentials that have an attractive as well as a repulsive part, most prominently in protein solutions. In this context the effect has been attributed to the presence of metastable fluid-fluid demixing. Our simulations, however, show that a purely repulsive system (that ha…
Holographic Recording of Surface Relief Gratings on As40S60-xSex Thin Films
2015
The studies of direct holographic recording of the surface relief gratings on amorphous As40S60−xSex thin films are presented. These gratings were created upon exposure to polarized laser beams of various wavelengths (λ = 473 – 650 nm). The orthogonally ±45° linearly polarized light beams were used for recording. The surface structure of the relief gratings was investigated by atomic force microscopy. The influence of laser beam wavelength and spatial frequency of the gratings recorded (grating period ?) on the surface relief gratings formation for every composition was examined.
<title>Relief holographic recording in amorphous As-S-Se</title>
2003
The relief-phase holographic gratings in amorphous As-S-Se thin films were recorded and studied. The holographic recording was performed by He-Ne laser (0.6328 μm). The influence of etching and cohernet self-enhancement processes on the formation of surface relief in amorphous As-S-Se thin films was studied.© (2003) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Photoinduced direct surface relief formation in amorphous As40S15Se45 films
2013
Abstract The surface relief grating formation in As40S15Se45 films under He–Ne laser wave-length λ = 0.6328 μm light influence was examined. The obtained experimental results showed the strong dependence of photoinduced surface relief depth on illumination dose and film thickness during holographic recording from film side as well as from glass substrate side. The surface relief grating profile over the thickness range 0.13
Solid polymer electrolytes from a fluorinated copolymer bearing cyclic carbonate pendant groups
2018
International audience; A poly(vinylidene fluoride-co-(2-oxo-1,3-dioxolan-4-yl)methyl 2-(trifluoromethyl)acrylate) random copolymer, poly(VDF-co-MAF-cyCB), with a MAF-cyCB weight fraction of 59% was synthesized via free radical copolymerization of VDF and MAF-cyCB, which is a methacrylate bearing cyclocarbonate side-chain. This copolymer showed nano-structured morphology, where crystalline PVDF-rich domains co-existed with amorphous poly(VDF-co-MAF-cyCB) segments. Solid polymer electrolytes were further obtained by loading the poly(VDF-co-MAF-cyCB) copolymer with various amounts of LiClO4. The added lithium salt was dissolved in the poly(VDF-co-MAF-cyCB) amorphous phase, which allowed the f…
SnCo nanowire array as negative electrode for lithium-ion batteries
2011
Abstract Amorphous SnCo alloy nanowires (NWs) grown inside the channels of polycarbonate membranes by potentiostatic codeposition of the two metals (SnCo- PM ) were tested vs. Li by repeated galvanostatic cycles in ethylene carbonate-dimethylcarbonate – LiPF 6 for use as negative electrode in lithium ion batteries. These SnCo electrodes delivered an almost constant capacity value, near to the theoretical for an atomic ratio Li/Sn of 4.4 over more than 35 lithiation–delithiation cycles at 1 C. SEM images of fresh and cycled electrodes showed that nanowires remain partially intact after repeated lithiation–delithiation cycles; indeed, several wires expanded and became porous. Results of amorp…
Changes in structure and conduction type upon addition of Ir to ZnO thin films
2017
Zn-Ir-O (Zn/Ir ≈ 1/1) thin films have been reported to be a potential p-type TCO material. It is, however, unknown whether it is possible to achieve p-type conductivity at low Ir content, and how the type and the magnitude of conductivity are affected by the film structure. To investigate the changes in properties taking place at low and moderate Ir content, this study focuses on the structure, electrical and optical properties of ZnO:Ir films with iridium concentration varying between 0.0 and 16.4 at.%. ZnO:Ir thin films were deposited on glass, Si, and Ti substrates by DC reactive magnetron co-sputtering at room temperature. Low Ir content (up to 5.1 at.%) films contain both a nano-crysta…