Search results for "amorphous"
showing 10 items of 790 documents
ChemInform Abstract: Photoelectrochemical Characterization of Thin Anodic Oxide Films on Zirconium Metal.
2010
Abstract The effect of metal surface preparation on the properties of thin oxide films grown on zirconium in different electrolytes was investigated by photocurrent spectroscopy. Both passive layers grown by free corrosion of the samples in a solution and thin oxides grown anodically at a constant rate were investigated. The photoelectrochemical results give a complex picture of the interface, being influenced by the metal surface preparation, the solution pH and the electrode potential. A duplex structure of the films has been suggested on the basis of the photocurrent spectra, with an external hydrous layer (amorphous or strongly defective) having an optical gap ( E g 2 ~ 3 eV) lower resp…
Amorphous semiconductor-electrolyte junction
1987
Abstract The photoelectrochemical behaviour of amorphous anodic films on niobium (a-Nb 2 O 5 ) grown in a wide range of thicknesses (20 ⩽ d ox ⩽ 25 nm) is presented. The influence of the wavelength, light intensity and film thickness on the photocharacteristics of the a-Nb 2 O 5 /electrolyte junction is investigated. Expressions for the photocurrent curves under steady-state conditions are derived by assuming a variable efficiency of photocarrier generation and different distributions of the electrical potential inside the amorphous films. The influence of the light intensity on the photocharacteristics and the existence of a sub-band-gap photoresponse are explained by assuming a finite den…
Chemical surface ageing in ambient conditions of an Al–Fe–Cr approximant phase.
2007
International audience; The γ -Al65Cr27Fe8 phase is a complex metallic alloy with interesting electrochemical properties. Here we present a detailed study of the surface ageing of this alloy when exposed to ambient conditions for a long time. A combination of x-ray reflectivity, photoemission spectroscopy and secondary neutral mass spectroscopy measurements is used to provide a model of the modification of the surface structure and its composition as functions of ageing time. The near surface structure is described by the stacking of three layers. The first layer on top of the substrate corresponds to a mixed metal oxide and is amorphous. The intermediate layer consists of pure aluminum oxy…
Oxygen-excess amorphous SiO2 with 18O-labeled interstitial oxygen molecules
2011
Abstract Exchange between oxygen molecules embedded in amorphous SiO 2 (interstitial O 2 ) and oxygen atoms in the a -SiO 2 network is found to be remarkably slow at 500 °C. Thermal loading of 18 O 2 at this temperature yields a -SiO 2 containing 18 O-labeled interstitial O 2 whose 18 O fraction is as high as ~ 90%. The 18 O fraction of interstitial O 2 in this sample is quickly decreased by thermal annealing at or above 700 °C because of the oxygen exchange accompanied by the release of 16 O from the a -SiO 2 network. This finding indicates that the oxygen exchange starts at much lower temperatures than indicated by previous works, based on monitoring of the isotopic composition of oxygen …
Structural inhomogeneity of Ge-doped amorphous SiO2 probed by photoluminescence lifetime measurements under synchrotron radiation.
2007
We report a study of the photoluminescence (PL) time decay of the B-type center, characterized by an optical absorption band peaked at similar to 5.2 eV and two related PL bands peaked at similar to 3.2 eV and similar to 4.3 eV, in sol-gel Ge-doped a- SiO2 under excitation by synchrotron radiation. Measurements were carried out by excitation in UV and in vacuum-UV (VUV), and were performed in the temperature range from 8 K up to 300 K in order to isolate the effects of the intersystem-crossing process, proposed to link the two emission bands of the center. Repeating the time decay measurement at several emission energies falling inside the 4.3 eV band, we have observed a variation of the PL…
Luminescence and Raman Detection of Molecular Cl2 and ClClO Molecules in Amorphous SiO2 Matrix
2017
The support from the Latvian Research Program project IMIS 2 (L.S., K.S.) and Latvian Science Council Grant 302/2012 (A.S.) is acknowledged. K.K. was partially supported by the Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology. H.H. was supported by the MEXT Element Strategy Initiative to form research cores.
Diffusive equilibrium properties of O2 in amorphous SiO2 nanoparticles probed via dependence of concentration on size and pressure
2014
An experimental study on the diffusive equilibrium value of interstitial O2 in silica nanoparticles was carried out on samples with average particles diameter 40, 14, and 7 nm. The investigation was performed by measuring the concentration of interstitial O2 by Raman and photoluminescence techniques. The dependence of diffusive equilibrium concentration on pressure and temperature was investigated in the pressure range from 0.2 to 76 bar and in the temperature range from 98 to 244 °C. The equilibrium concentration of interstitial O2 follows Henry’s law at pressures below 13 bar whereas a departure from this model is observed at higher pressures. In particular, O2 concentration saturates abo…
Isotope Effect on the Infrared Photoluminescence Decay of Interstitial Oxygen Molecules in Amorphous SiO2
2009
The decay constants of the a1Δg(v=0)→X3Σg-(v=0) infrared photoluminescence (PL) of isotopically-labeled oxygen molecules 16O18O and 18O2 dissolved in the interstitial voids of a-SiO2 are ~1.7 and ~2.5 times larger than that of 16O2. This difference originates from the isotope shift in the energy of the nonradiative transitions from the a state to the vibronic levels of the X ground state. Calibration of the PL quantum yield using the measured decay constants is essential to measure the correct concentration of isotopically-labeled interstitial O2.
The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films
2009
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH(3) atmosphere. These PL measurements of the Er(3+) emission at 1.54 microm under non-resonant pumping with the Er f-f transitions are obtained for different Er(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10(18) to 10(18) cm(-3) as a fun…
Exchange between interstitial oxygen molecules and network oxygen atoms in amorphousSiO2studied byO18isotope labeling and infrared photoluminescence …
2011
Amorphous ${\mathrm{SiO}}_{2}$ ($a$-${\mathrm{SiO}}_{2}$) thermally annealed in an oxygen atmosphere incorporates oxygen molecules (O${}_{2}$) in interstitial voids. When the thermal annealing is performed in $^{18}\mathrm{O}$${}_{2}$ gas, interstitial $^{18}\mathrm{O}$${}_{2}$ as well as interstitial $^{16}\mathrm{O}$$^{18}\mathrm{O}$ and $^{16}\mathrm{O}$${}_{2}$ are formed due to the oxygen exchange with the $a$-${\mathrm{SiO}}_{2}$ network. The ${a}^{1}{\ensuremath{\Delta}}_{g}(v=0)\ensuremath{\rightarrow}{X}^{3}{\ensuremath{\Sigma}}_{g}^{\ensuremath{-}}(v=1)$ infrared photoluminescence band of interstitial ${\mathrm{O}}_{2}$ was utilized to quantitatively analyze the oxygen exchange, t…