Search results for "atomikerroskasvatus"
showing 10 items of 38 documents
Effect of atomic layer deposited zinc promoter on the activity of copper-on-zirconia catalysts in the hydrogenation of carbon dioxide to methanol
2023
Funding Information: The work at Aalto University has been financially supported by the Academy of Finland (COOLCAT consortium, decision no. 329977 and 329978 ; ALDI consortium, decision no. 331082 ). This work made use of Aalto University Bioeconomy, OtaNano and RawMatters infrastructure. Hannu Revitzer (Aalto University) is thanked for the ICP-OES analysis, Aalto workshop people (especially Seppo Jääskeläinen) for working on the reactor modifications. The DFT calculations were made possible by computational resources provided by the CSC — IT Center for Science, Espoo, Finland ( https://www.csc.fi/en/ ) and computer capacity from the Finnish Grid and Cloud Infrastructure (urn:nbn:fi:resear…
Itsekantavien hiilinanoputkivahvisteisten alumiinioksidikalvojen valmistus ja karakterisointi
2016
Tässä pro gradu -tutkielmassa pyrittiin valmistamaan hiilinanoputkilla vahvistettuja itsekantavia Al2O3-ohutkalvoja. Ohutkalvot kasvatettiin märkäetsauksella ja atomikerroskasvatuksella ja niitä vahvistettiin levittämällä hiilinanoputkia Al2O3-kerrosten väliin. Hiilinanoputkia linkitettiin verkostomaiseksi rakenteeksi ionisäteilytyksellä. Kalvoja karakterisoitiin valmistuksen aikana ja sen jälkeen elektronimikroskopialla, atomivoimamikroskopialla, profilometrialla ja ramanspektroskopialla. Käytettyjen karakterisointimenetelmien perusteella hiilinanoputkien linkittymistä saattoi olla havaittavissa. Hiilinanoputkilla vahvistettujen itsekantavien Al2O3-kalvojen Youngin moduulin arvoksi saatiin…
Atomic Layer Deposition of Intermetallic Fe4Zn9 Thin Films from Diethyl Zinc
2022
| openaire: EC/H2020/765378/EU//HYCOAT We present a new type of atomic layer deposition (ALD) process for intermetallic thin films, where diethyl zinc (DEZ) serves as a coreactant. In our proof-of-concept study, FeCl3 is used as the second precursor. The FeCl3 + DEZ process yields in situ crystalline Fe4Zn9 thin films, where the elemental purity and Fe/Zn ratio are confirmed by time-of-flight elastic recoil detection analysis (TOF-ERDA), Rutherford backscattering spectrometry (RBS), atomic absorption spectroscopy (AAS), and energy-dispersive X-ray spectroscopy (EDX) analyses. The film thickness is precisely controlled by the number of precursor supply cycles, as expected for an ALD process.…
Tribological properties of thin films made by atomic layer deposition sliding against silicon
2018
Interfacial phenomena, such as adhesion, friction, and wear, can dominate the performance and reliability of microelectromechanical (MEMS) devices. Here, thin films made by atomic layer deposition (ALD) were tested for their tribological properties. Tribological tests were carried out with silicon counterpart sliding against ALD thin films in order to simulate the contacts occurring in the MEMS devices. The counterpart was sliding in a linear reciprocating motion against the ALD films with the total sliding distances of 5 and 20 m. Al2O3 and TiO2 coatings with different deposition temperatures were investigated in addition to Al2O3-TiO2-nanolaminate, TiN, NbN, TiAlCN, a-C:H [diamondlike car…
Al2O3 ALD films grown using TMA + rare isotope 2H216O and 1H218O precursors
2021
In this work hydrogen and oxygen migration and exchange reactions in the atomic layer deposited (ALD) Al2O3 thin films were studied together with hydrogen incorporation by varying deposition parameters. Al2O3 films deposited at low temperatures can contain more than 20 at. % of hydrogen. Both higher temperature and longer purge length decrease the hydrogen and carbon concentrations significantly. In order to track the hydrogen and oxygen movement in the films, heavy water (2H216O) and oxygen-18 enriched water (1H218O) were used as precursors in combination with trimethylaluminium (TMA). Different isotopes of the same element were quantified by means of time-of-flight elastic recoil detectio…
Thermomechanical properties of aluminum oxide thin films made by atomic layer deposition
2022
Funding Information: This work was carried out within the MECHALD project funded by Business Finland and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (Ref. No. 251220) and Nuclear and Accelerator Based Physics (Ref Nos. 213503 and 251353) of the Academy of Finland. Publisher Copyright: © 2022 Author(s). In microelectromechanical system devices, thin films experience thermal processing at temperatures some cases exceeding the growth or deposition temperature of the film. In the case of the thin film grown by atomic layer deposition (ALD) at relatively low temperatures, post-ALD thermal processing or high device operation temperature might cause performance issues…
Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysis
2021
Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor. In this work we use the readily available nickel precursor nickelocene in conjunction with O2 plasma as a co-reagent (100 W) over a temperature range of 75–325 °C. An optimised growth per cycle of 0.036 nm was obtained at 250 °C with uniform thickness and coverage on scale-up to and including an 6 inch Si wafer (with a 200 nm thermal SiO2 top layer). The bulk characteristics of the NiO thin films were comprehensively interrogated by PXRD, Raman spectrosco…
Structural and optical characterization of ZnS ultrathin films prepared by low-temperature ALD from diethylzinc and 1.5-pentanedithiol after various …
2019
The structural and optical evolution of the ZnS thin films prepared by atomic layer deposition (ALD) from the diethylzinc (DEZ) and 1,5-pentanedithiol (PDT) as zinc and sulfur precursors was studied. A deposited ZnS layer (of about 60 nm) is amorphous, with a significant S excess. After annealing, the stoichiometry improved for annealing temperatures &ge
Mechanical and optical properties of as-grown and thermally annealed titanium dioxide from titanium tetrachloride and water by atomic layer deposition
2021
Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353) of the Academy of Finland. Funding Information: This work was carried out within the MECHALD project funded by Business Finland (Tekes) and is linked to the Finnish Centers of Excellence in Atomic Layer Deposition (ref. 251220 ) and Nuclear and Accelerator Based Physics (refs. 213503 and 251353 ) of the Academy of Finland. Publisher Copyright: © 2021 The use of thin-films made by atomic layer deposition (ALD) is increasing in …
Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma
2018
The atomic layer deposition (ALD) of AlN from AlCl3 was investigated using a thermal process with NH3 and a plasma-enhanced (PE)ALD process with Ar/NH3 plasma. The growth was limited in the thermal process by the low reactivity of NH3, and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4A ° vs 0.7A ° ). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The…