Search results for "circuit"
showing 10 items of 936 documents
Design and analysis of non-linear circuit with tunnel diode for hybrid control systems
2018
Electric circuits with tunnel diode's represent a classical example of dynamic systems with nonlinearities, which feature piecewise negative damping and multiple equilibria and, as consequence, nontrivial trajectories in the state-space. In this paper, we describe the experimental design and analysis of an electrical circuit, including a tunnel diode, allowing for a storage behavior with bistable output voltage states - low and high. The system is modeled for simulation and an experimental setup is designed and implemented in order to run a formal verification on different tools, applying a variety of hybrid control methods. The nonlinear diode's characteristic curve is experimentally deter…
Modeling Stator Winding Inter-Turn Short Circuit Faults in PMSMs including Cross Effects
2020
Author's accepted manuscript. © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. This paper presents a detailed analysis of stator winding inter-turn Short Circuit (ITSC) faults, taking the cross effects in the three phases of a permanent magnet synchronous motor (PMSM) into account by considering insulation degradation resistances. A PMSM with series coils in eac…
Custom measurement system for memristor characterisation
2021
Abstract A cheap, compact and customisable characterisation system for memristor devices, working between ± 10 V, is presented. SPICE (Simulation Program with Integrated Circuit Emphasis) simulations are performed to verify the circuit feasibility and a proper software is developed to drive the system. The potentiality of the realised system is tested by performing several electrical measurements on both Cu/HfO2/Pt memristors and two-terminals commercial devices.
A fully-digital realtime SoC FPGA based phase noise analyzer with cross-correlation
2017
We report on a fully-digital and realtime operation of a phase noise analyzer using modern digital techniques with cross-correlation. With the advent of system on chip field-programmable gate arrays (SoC FPGAs) embedding hard core central processing unit, coprocessor and FPGA onto a single integrated circuit, the building of sensitive analysis devices for Time & Frequency research is made accessible at virtually no cost and benefits from reconfigurability. Used with high-speed digitizers we have successfully implemented a four-channel system whose preliminary results at 10 MHz shows a residual white noise floor < −185 dBrad2/Hz up to 5 MHz off the carrier, and flicker < −127 dBrad2/Hz using…
The helicoidal magnetic generator
2016
Recently helicoidal generator for the exploitation of sea wave energy has been proposed. This device can convert both the vertical and rotational movement of seawaves. The electrical energy generated by such a device must be converted and conditioned in order to match the instantaneous utility requirements and a power link from the sea to an interconnection is needed. In this paper, the authors propose a mathematical model of this device and preliminarily present a prototype of the machine.
Performance evaluation and stability of silicide-based thermoelectric modules
2020
Abstract Long-term studies on thermoelectric generators based on N-type magnesium silicide (Mg2.01Si0.49Sn0.5Sb0.01) and P-type higher manganese silicide (Mn0.98Mo0.02Si1.73Ge0.02) materials are presented, in the operating temperature range of 200 °C–400 °C. Emphasis is put on the performance and reliability of the current collector configuration, especially on the hot side of the module, and on the thermomechanical stresses that are created during operation and lifetime testing as a result of large temperature gradients experienced across the thermoelectric legs. With silver (Ag) paste as contact material, the long term-stability of the uni-couples was carried out on non-metalized legs and…
How Gettering Affects the Temperature Sensitivity of the Implied Open Circuit Voltage of Multicrystalline Silicon Wafers
2019
The temperature sensitivity of the open circuit voltage of a solar cell is mainly driven by changes in the intrinsic carrier concentration, but also by the temperature dependence of the limiting recombination mechanisms in the cell. This paper investigates the influence of recombination through metallic impurities on the temperature sensitivity of multicrystalline silicon wafers. Spatially resolved temperature dependent analysis is performed to evaluate the temperature sensitivity of wafers from different brick positions before and after being subjected to phosphorus diffusion gettering. Local spatial analysis is performed on intra-grain areas, dislocation clusters and grain boundaries. Lar…
Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
2016
Abstract The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors…
SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
2019
Abstract Nowadays, MOSFET SiC semiconductors short circuit capability is a key issue. SiC/Si Cascodes are compound semiconductors that, in some aspects, show a similar MOSFET behaviour. No interlayer dielectric insulation suggests, in theory, Cascode JFETs as more robust devices. The purpose of this paper is to compare the drift and degradation of two commercial devices static parameters by exposing them to different levels of repetitive 1.5 μs short-circuit campaigns at 85% of its breakdown voltage. Short-circuit time has been set experimentally, and longer times result in catastrophic failure of MOSFET devices due to over self-heating. For this purpose, pre- and post-test short circuit ch…
Electrical Modeling of Monolithically Integrated GMR Based Current Sensors
2018
We report on the electrical compact model, using Verilog-A, of a monolithically integrated giant magnetoresistance (GMR) based electrical current sensors. For this purpose, a specifically designed ASIC (AMS $0.35\mu \mathrm{m}$ technology) has been considered, onto which such sensors have been patterned and fabricated, following a two-steps procedure. This work is focused on the DC regime model extraction, giving evidences of its good performance and stating the bases for subsequent model improvements.