Search results for "composites"
showing 10 items of 1905 documents
Luminescence of polymorph crystalline and glassy SiO2, GeO2: A short review
2009
Studies of SiO 2 and GeO 2 crystals with α-quartz and rutile structures were performed during last two decades. The goal of such studies was comparison of properties with those of glassy modifications of these crystals. Luminescence of oxygen deficient centers in these glassy materials was found to resemble the luminescence of the rutile-type modification rather than α-quartz modification. In α-quartz, similar luminescence centers appear after damaging irradiation by electron beam at low temperatures (<60 K) or at ambient temperatures after gamma or neutron irradiation.
Photoluminescent and paramagnetic centers in gamma irradiated porous silica
2005
Abstract The photoluminescence and electron spin resonance properties of gamma irradiated (up to 500 kGy) porous silica are reported. By exciting at 5.6 eV a photoluminescence contribution can be detected before irradiation, peaked at about 4.1 eV. Gamma irradiation causes the generation of the E′ centers (about 1 × 1014 defects cm−3) of paramagnetic hole centers and modifies the photoluminescence properties of the sample: the emission amplitude decreases and three contributions can be singled out at about 3.3, 3.8 and 4.4 eV.
Temperature dependence of luminescence decay in Sn-doped silica
2005
We report an experimental study on the temperature dependence, in the range 18-300 K, of the decay kinetics of the emission at 4.1 eV from the first excited electronic state of oxygen deficient centers in a 2000 ppm Sn-doped sol-gel silica. At low temperature, this luminescence decays exponentially with a lifetime of 8.4 ns, whereas, on increasing the temperature, the time decay decreases and cannot be fitted with an exponential function. These results are expected if there is a competition between the radiative and the thermally activated intersystem-crossing decay channels toward the associated triplet state. The comparison with previous data in pure oxygen-deficient and Ge-doped silica g…
Peculiarities of photoluminescence excited by 157nm wavelength F2 excimer laser in fused and unfused silicon dioxide
2009
Abstract Photoluminescence (PL) spectra and kinetics of high purity amorphous silicon dioxide with ultra low hydroxyl content is studied under the excitation by F 2 excimer laser (157 nm wavelength) pulses. Materials synthesized in the SPCVD plasma chemical process are studied before and after fusion. Two bands are found in the PL spectra: one centered at 2.6–2.9 eV (a blue band) and the other at 4.4 eV (a UV band). Luminescence intensity of unfused material is found to increase significantly with exposure time starting from a very small level, whereas in fused counterpart it does not depend on irradiation time. Both bands show complicated decay kinetics, to which add exponential and hyperb…
Gamma ray induced 11.8 mT ESR doublet in natural silica
1998
Abstract We report electron spin resonance (ESR) measurements in natural and synthetic vitreous SiO2 samples irradiated by γ rays. An 11.8 mT doublet, asymmetrically centered on the resonance line of the E′ center, was detected only in natural samples. The intensity of this doublet as a function of γ exposure tends to saturate for doses as low as 0.2 Mrad and is not related to the growth kinetics of the E′ centers. Photoluminescence (PL) measurements on the same samples have shown that two emissions at 3.15 and 4.26 eV bleach with the same kinetics as does the 11.8 mT doublet on increasing the γ ray dose. We tentatively suggest the presence of a conversion mechanism, activated by γ irradiat…
Conformational heterogeneity of the point defects in silica: The lifetime of the phosphorescence band at 2.7 eV
2008
We have measured the excitation and emission energy dependence of the lifetimes of the 2.7 eV photoluminescence band associated to oxygen deficient centers in silica glasses. The non-exponential behavior of this time decay is consistent with intrinsic conformational heterogeneity of these point defects in the amorphous matrix. Accordingly, we have analyzed the data in terms of a radiative rates distribution. Moreover, both surface and bulk typologies of these point defects have been studied. The mean value of the lifetime distribution of the surface defects increases from 12 to 15 ms varying the excitation energy from 4.6 to 5.2 eV, and it increases from 14 to 15 ms in the emission energy i…
Gamma irradiation of graphene quantum dots with ethylenediamine: Antioxidant for ion sensing
2020
Due to the low consumption of chemicals, the absence of toxic residual side products, the procedure simplicity and time-saving aspects, gamma irradiation offers advantages over the classical chemical protocols. We successfully employed gamma irradiation in order to introduce N-atoms in Graphene Quantum Dots (GQDs). By irradiating GQDs water dispersions in the presence of isopropyl alcohol and ethylenediamine, at doses of 25, 50 and 200 kGy, we attached amino groups onto GQDs in a single synthetic step. At the same time, a chemical reduction is achieved, too. Selected conditions induced incorporation of N-atoms within GDQs atomic lattice (around 3 at%), at all applied doses. Additionally, th…
Sub-band-gap-excited luminescence of localized states in SiO2–Si and SiO2–Al glasses
2010
Abstract Silica glass samples doped with extra silicon (SiO 2 –Si: artificial oxygen deficiency) and with aluminum (SiO 2 –Al: Al-doped without accompanying alkali ions) were studied. The luminescence properties of these two samples are compared in the range of temperature 15–290 K under excitation of ArF excimer laser (193 nm). In both samples the luminescence of oxygen deficient centers (ODCs) is detected, i.e., emission bands in the blue at 440 nm and the UV at 280 nm. Cooling of the both samples led to strong increases of luminescence intensity down to 80 K with much smaller increases for still lower temperatures. At 290 K in SiO 2 –Si a luminescence similar to that of twofold-coordinat…
Impact of fluorine admixture, hydrogen loading, and exposure to ArF excimer laser on photoluminescence of bismuth defects in amorphous silica
2013
Abstract Photoluminescence (PL) excited by ArF (193 nm), KrF (248 nm) and N 2 (337 nm) pulsed lasers is studied in bismuth doped unfused silicon dioxide synthesized on silica substrates by surface-plasma chemical vapor deposition (SPCVD). Additive free and fluorinated (F content ~ 0.4 wt.%) amorphous silica are examined as host materials for bismuth. Three typical PL bands peaking at wavelengths of 650 nm (orange), 800 nm and 1400 nm (near infrared, NIR) were observed. It is found that fluorine additive weakly affects PL detail of as deposited samples. However, hydrogen loading completely deactivates NIR PL in the case of fluorine free sample, but only slightly suppresses the NIR band in fl…
Temperature dependence of O2 singlet photoluminescence in silica nanoparticles
2013
Abstract The near infrared singlet emission and photoluminescence lifetime of O 2 molecules embedded in silica nanoparticles are studied from room temperature down to 10 K. The area of the photoluminescence band under infrared excitation decreases for temperature above 100 K and the lifetime is shortened. These observations provide evidence of a thermally activated relaxation channel with activation energy of about 40 meV. This relaxation mechanism adds to the already known temperature independent electronic-to-vibrational coupling involving high energy vibrational modes of the host matrix or its impurities. The thermally activated process is suggested to consist in the breakage of the O 2 …