Search results for "current"
showing 10 items of 2224 documents
Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence
2007
The current and electroluminescence transient responses of standard poly phenylene vinylene -based light-emitting devices have been investigated. The electroluminescence time response is longer milliseconds scale than the current switch-off time by more than one order of magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage. The fast current decay limits the electroluminescence decay at higher voltages. Several approaches are discussed to interpret the observed slow decrease of electroluminescence after turning off the bias. One relies upon the Langevin-type bimolecu…
Cathodoluminescence characterization of ZnO/ZnS nanostructures anodized under hydrodynamic conditions
2018
[EN] ZnO/ZnS nanostructures were successfully synthesized by a simple electrochemical anodization of zinc in a glycerol based electrolyte containing sulfide-ammonium fluoride. The influence of different hydrodynamic conditions and anodization potentials during anodization on the morphological and electronic properties of the obtained ZnO/ZnS nanostructures was studied. The anodized samples were characterized using confocal Raman microscopy, X-Ray Diffraction (XRD), Field Emission Scanning Electronic Microscopy (FE-SEM), cathodoluminescence (CL), and photoelectrochemical water splitting tests under standard AM 1.5 conditions. The results showed that hydrodynamic conditions and higher potenti…
Performance Study of Split Ferrite Cores Designed for EMI Suppression on Cables
2020
The ideal procedure to start designing an electronic device is to consider the electromagnetic compatibility (EMC) from the beginning. Even so, EMC problems can appear afterward, especially when the designed system is interconnected with external devices. Thereby, electromagnetic interferences (EMIs) could be transmitted to our device from power cables that interconnect it with an external power source or are connected to another system to establish wired communication. The application of an EMI suppressor such as a sleeve core that encircles the cables is a widely used technique to attenuate EM disturbances. This contribution is focused on the characterization of a variation of this cable …
SEGREGATION CONTROL AT DIRECTIONAL SOLIDIFICATION USING MAGNETIC FIELD AND ELECTRIC CURRENT
2015
International audience
Investigation of Critical Points of Pore Formation Voltage on the Surface of Semiconductors of A3B5 Group
2021
In this work, critical values of pore-formation in electrochemical machining of semiconductors of A 3 B 5 group are studied. On the example of indium phosphide, the indicators of the series of dependence of current density on the voltage of anodization are studied. The rates of current density increase in the regime of gradual rise of anodization voltage are determined. According to these indicators, the intervals are established, within which the active pore-formation occurs on the surface of semiconductor.
Magnetization relaxation in the flux-creep annealing regime across the second magnetization peak of disordered YBa2Cu3O7− crystals
2001
Abstract The relaxation of the irreversible magnetization of disordered YBa 2 Cu 3 O 7− x crystals measured in the “flux-creep annealing” regime reveals that across the second magnetization peak (SMP) the barriers against flux motion remain finite at low current densities, which supports the existence of a crossover to a dissipation process involving the plastic deformation of the vortex system. In our experiments, the vortex creep process appears to be exclusively controlled by collective pinning barriers (diverging at low current densities) only below the onset of the SMP, where the vortex system is stable against dislocation formation. The (elastic) collective pinning barriers observed f…
Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film.
2014
We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of…
Magnetic Skyrmions: Current-Induced Skyrmion Generation through Morphological Thermal Transitions in Chiral Ferromagnetic Heterostructures (Adv. Mate…
2018
Tunable Sign Change of Spin Hall Magnetoresistance in Pt/NiO/YIG Structures
2017
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature that increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to the Pt/YIG bilayer, which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of the NiO layer. We explain the negative SMR by the NiO "spin flop" coupled with YIG, which can be overridden at higher temperature by positive SMR contribution from YIG. This highlights the role of m…