Search results for "defect"
showing 10 items of 879 documents
Radiation induced defects in SiO 2
2002
The main luminescent centers in SiO 2 films are the red luminescence R (650 v nm; 1.85 v eV) of the non-bridging oxygen hole center (NBOHC) and the twofold-coordinated (divalent) silicon with a blue B (460 v nm; 2.7 v eV) and a UV band (285 v nm; 4.4 v eV). Especially the latter ones are produced under irradiation, but from existing precursors assumed as silicon related oxygen deficient centers (SiODC). Therefore, in order to prove these models we compare a direct oxygen implantation with a direct silicon implantation into SiO 2 layers. The main result is: implanting oxygen increases the red band R but does not affect the blue band B. Silicon surplus increases the amplitude of the blue (B) …
Time resolved photoluminescence associated with non-bridging oxygen hole centers in irradiated silica
2008
Abstract We report time resolved photoluminescence spectra of irradiated silica under excitation with a laser tunable in the visible and UV range. The investigated samples exhibit the emission band at 1.9 eV associated with non-bridging oxygen hole centers, whose spectral and kinetics properties do not depend on the kind of irradiation (γ, β and neutrons). The 1.9 eV luminescence decay follows a multi-exponential curve with a characteristic lifetime that increases from 8.9 μs to 10.4 μs on increasing the emission energy. This dependence accounts for the blue-shift of the emission band during its decay and is interpreted as due to the inhomogeneous properties of silica leading to a distribut…
Facility for thermal helium desorption (THDS) measurements
1995
Abstract We describe a thermal helium desorption spectrometer, built at the Department of Physics, University of Jyvaskyla, which will be used in investigations of crystal defects generated by keV range heavy ion bombardment. The helium desorption method and its requirements are reviewed briefly. The structure of the facility itself is presented in detail. The efficiency and the operation of the apparatus is discussed.
Radiation-induced point defects in simple oxides
1998
We present a survey of recent theoretical studies of radiation-induced point defects in simple oxides with emphasis on highly ionic MgO, partly-covalent corundum (Al2O3) and ferroelectric KNbO3. The atomic and electronic structure of the electronic (F a and F centers) and hole centers, as well as interstitial atoms therein are discussed in light of the available experimental data. Results for defect diAusion and photo-stimulated F a fi F center conversion are also ana
Void lattice formation in electron irradiated CaF 2 : Statistical analysis of experimental data and cellular automata simulations
2016
Abstract Calcium fluoride (CaF2) is an important optical material widely used in both microlithography and deep UV windows. It is known that under certain conditions electron beam irradiation can create therein a superlattice consisting of vacancy clusters (called a void lattice). The goal of this paper is twofold. Firstly, to perform a quantitative analysis of experimental TEM images demonstrating void lattice formation, we developed two distinct image filters. As a result, we can easily calculate vacancy concentration, vacancy cluster distribution function as well as average distances between defect clusters. The results for two suggested filters are similar and demonstrate that experimen…
Molecular dynamics simulation of the damage production in Al (110) surface with slow argon ions
1986
We have developed a molecular dynamics simulation program to gain more insight into the sputtering process, especially the damage produced by it. We have studied the sputtering of aluminium (110) surface with argon ions. The Morse pair potentail was used for Al−Al interaction, the Lennard-Jones potential for Ar−Ar interaction and both the Moliere potential and the universal potential of Ziegler et al. for Ar−Al interaction. An electronic friction term proportional to the particle velocities was also used. The studied incident argon ion energies and angles were 200 and 400 eV and 0° (normal), 25°, 45° and 75°, respectively. The calculated sputtering yield and the overall shape and the mean d…
Irradiation induced defects in fluorine doped silica
2008
International audience; The role of fluorine doping in the response to UV pulsed laser and c radiation of silica preforms and fibers was studied using electron spin resonance (ESR) spectroscopy. Exposure to radiation mainly generates E0 centers, with the same effectiveness in fibers and in preforms. The E'concentration in F-doped silica fibers is found to increase with UV energy fluence till a saturation value, consistently with a precursor conversion process. These results show the fluorine role in reducing the strained Si–O bonds thus improving the radiation hardness of silica, also after drawing process.
Radiation-hard semiconductor detectors for SuperLHC
2005
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…
Paramagnetic germanium-related centers induced by energetic radiation in optical fibers and preforms
2009
International audience; We investigated the creation processes of Ge-related paramagnetic point defects in silica fibers and preforms, doped with different amounts of germanium, and X-ray irradiated at several radiation doses. Different paramagnetic defect species, like GeE0, Ge(1) and Ge(2), were revealed by electron paramagnetic resonance measurements and their concentration was studied as a function of the irradiation dose. The comparison with the optical absorption spectra points out the main role of Ge(1) on the optical transmission loss of fibers in the UV region.
Evidence of different red emissions in irradiated germanosilicate materials
2016
International audience; This experimental investigation is focused on a radiation induced red emission in Ge doped silica materials, elaborated with different methods and processes. The differently irradiated samples as well as the pristine ones were analyzed with various spectroscopic techniques, such as confocal microscopy luminescence (CML), time resolved luminescence (TRL), photoluminescence excitation (PLE) and electron paramagnetic resonance (EPR). Our data prove that irradiation induces a red luminescence related to the presence of the Ge atoms. Such emission features a photoexcitation spectrum in the UV-blue spectral range and, TRL measurements show that its decrease differs from a …