Search results for "defect"
showing 10 items of 879 documents
Effects induced by UV laser radiation on the blue luminescence of silica nanoparticles
2013
The effects induced on the blue luminescence centered around 2.8 eV, characteristic of silica nanoparticles, were investigated by monitoring its intensity during and after exposure to the third and the fourth harmonic of a Nd:YAG pulsed laser. The luminescence trend is found to be dependent on the UV photon energy: 3.50 eV photons induce a partial bleaching followed by a recovery in the post-irradiation stage; 4.66 eV photons cause a total bleaching permanent after the irradiation. These results are interpreted as the conversion of luminescent defects towards stable and metastable configurations.
Size-dependent photoemission shifts in small metal clusters
1986
Density-functional calculations of the change in self-consistent-field energy ( Delta SCF) type are reported for core-level photoemission shifts in small metal spheres. The results for the atom-in-jellium vacancy model show that the binding energies are increased from bulk-metal values, but the photoemission shifts show considerable oscillations as a function of cluster size.
Relaxation processes of point defects in vitreous silica from femtosecond to nanoseconds
2008
We studied ultrafast relaxation of localized excited states at Ge-related oxygen deficient centers in silica using femtosecond transient-absorption spectroscopy. The relaxation dynamics exhibits a biexponential decay, which we ascribe to the departure from the Frank-Condon region of the first excited singlet state in 240 fs, followed by cooling in ∼10 ps. At later times, a nonexponential relaxation spanning up to 40 ns occurs, which is fitted with an inhomogeneous distribution of nonradiative relaxation rates, following a chi-square distribution with one degree of freedom. This reveals several analogies with phenomena such as neutron reactions, quantum dot blinking, or intramolecular vibrat…
Stadnik and Flambaum Reply:
2016
In the comment of Avelino, Sousa and Lobo [arXiv:1506.06028], it is argued, by comparing the kinetic energy of a topological defect with the overall energy of a pulsar, that the origin of the pulsar glitch phenomenon due to the passage of networks of topological defects through pulsars is faced with serious difficulties. Here, we point out that topological defects may trigger pulsar glitches within traditional scenarios, such as vortex unpinning. If the energy transfer from a topological defect exceeds the activation energy for a single pinned vortex, this may lead to an avalanche of unpinning of vortices and consequently a pulsar glitch, and therefore the source of angular momentum and ene…
Positron annihilation studies of binary Ni-based alloys
1987
Positron annihilation studies of Ni–1 at. % X (X = Pb, In and Zn) alloys have been performed. The experimentally observed changes in the parameters connecting the shape of angular correlation curve with the kind and concentration of crystal lattice defects are correlated with the values of the vacancy-solute binding energy calculated from the vacancy model of melting.
First-principles and semi-empirical calculations for bound hole polarons in KNbO3
1999
The ab initio linear muffin-tin-orbital (LMTO) formalism and the semi-empirical method of the Intermediate Neglect of the Differential Overlap (INDO) based on the Hartree-Fock formalism are combined for the study of the hole polarons (a hole trapped nearby the cation vacancy) in a cubic phase of KNbO3 perovskite crystals. The 40-atom and 320-atom supercells were used, respectively. We predict existence of both, one-site and two-site (molecular) polarons with close optical absorption energies (0.9 eV and 0.95 eV). The relevant experimental data are discussed.
Determination of the154Sm ionization energy by high-precision laser spectroscopy
2004
High-resolution resonance ionization mass spectrometry has been used to determine the ionization energy of 154Sm. Three-step resonant excitation with single-frequency lasers populates a series of ? = 3, J = 4 Rydberg levels in the range of n = 60?160, covering the range of 30 cm?1 to 4 cm?1 below the first ionization limit. Although samarium has a complex electronic structure with eight valence electrons, series of nearly unperturbed levels could be observed. Analysis includes shifts caused by a single perturbing state, an extended Ritz term for quantum defect variation at lower n, and corrections for residual electric fields. The resulting series convergence limit has an uncertainty of 4 ?…
Quasimolecular luminescence centers formed by photoinduced recombination of exciton-created defects in KI
1995
Abstract The photoinduced recombination of exciton-created lattice defects - the F,H center pairs was studied in KI crystal at low temperatures. Two different luminescence centers with quasimolecular structure can be distinguished. One of them is the self-trapped exciton, the other one could be the H-plus-electron (H+e) center.
Generalised Kronig-Penney model for ultracold atomic quantum systems
2014
We study the properties of a quantum particle interacting with a one dimensional structure of equidistant scattering centres. We derive an analytical expression for the dispersion relation and for the Bloch functions in the presence of both even and odd scattering waves within the pseudopotential approximation. This generalises the well-known solid-state physics text-book result known as the Kronig-Penney model. Our generalised model can be used to describe systems such as degenerate Fermi gases interacting with ions or with another neutral atomic species confined in an optical lattice, thus enabling the investigation of polaron or Kondo physics within a simple formalism. We focus our atten…
Observation of a charge delocalization from Se vacancies inBi2Se3: A positron annihilation study of native defects
2016
By means of positron annihilation lifetime spectroscopy, we have investigated the native defects present in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$, which belongs to the family of topological insulators. We experimentally demonstrate that selenium vacancy defects $({\text{V}}_{\text{Se1}})$ are present in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ as-grown samples, and that their charge is delocalized as temperature increases. At least from 100 K up to room temperature both ${\text{V}}_{\text{Se1}}^{0}$ and ${\text{V}}_{\text{Se1}}^{+}$ charge states coexist. The observed charge delocalization determines the contribution of ${\text{V}}_{\text{Se1}}$ defects to the $n$-type conductivity of ${\mathrm{…