Search results for "device"

Suppression of timing errors in short overdamped Josephson junctions

2004

The influence of fluctuations and periodical driving on temporal characteristics of short overdamped Josephson junction is analyzed. We obtain the standard deviation of the switching time in the presence of a dichotomous driving force for arbitrary noise intensity and in the frequency range of practical interest. For sinusoidal driving the resonant activation effect has been observed. The mean switching time and its standard deviation have a minimum as a function of driving frequency. As a consequence the optimization of the system for fast operation will simultaneously lead to minimization of timing errors.

Generalized formulation and symmetry properties of reciprocal nonabsorbing polarization devices: Application to liquid-crystal displays

2000

We present a general formulation based on the Jones-matrix theory for reciprocal nonabsorbing polarization devices, including polarization interference filters and liquid-crystal displays. The development of this formulation is based on general symmetry conditions that relate the Jones matrix when the device is illuminated from the front side and from the back side. The application to liquid-crystal displays results in a constraint of the Jones-matrix elements, which represents a generalization of the existing models that explain their modulation properties.

The physics and chemistry of liquid crystal devices, Gerald J. Sprokel, Ed., Plenum, New York, 1979, 348 pp. Price: $42.50

1981

Operation of transition-edge sensors with excess thermal noise

2006

The superconducting transition-edge sensor (TES) is currently one of the most attractive choices for ultra-high resolution calorimetry in the keV x-ray band, and is being considered for future ESA and NASA missions. We have performed a study on the noise characteristics of Au/Ti bilayer TESs, at operating temperatures around ~100 mK, with the SQUID readout at 1.5 K. Experimental results indicate that without modifications the back-action noise from the SQUID chip degrades the noise characteristics significantly. We present a simple and effective solution to the problem: by installing an extra shunt resistor which absorbs the excess radiation from the SQUID input, we have reduced the excess …

Stationary semiconductor equations

1996

The behaviour of a semiconductor device is usually modelled by three coupled nonlinear partial differential equations of elliptic type. Such a system for the transport of mobile charge carriers was first introduced by Van Roosbroeck [Van Roosbroeck] in 1950. Nowadays there are many models which differ in their choice of unknowns, scales, various types of nonlinearities etc. (see, e.g., [Brezzi], [Groger], [Markowich], [Markowich, Ringhofer, Schmeiser], [Mock, 1972], [Polak, den Heijer, Schilders, Markowich], [Pospisek], [Pospisek, Segeth, Silhan], [Selberherr], [Sze], [Zlamal, 1986]).

A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics

2000

Abstract Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×10 14 p cm −2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.

High Voltage Monolithic Active Pixel Sensors

2018

Ever higher demands on resolution and rate capability drive the development of particle tracking detectors. Especially at low momenta, multiple Coulomb scattering in the material of the detector is also strongly affecting the resolution of momentum measurements. While gas-based detectors such as drift chambers and time projection chambers can be built with very small amounts of material, their rate capability is limited by ageing and space charge effects. Hybrid semiconductor detectors on the other hand combine a depleted (silicon) sensor with a custom amplifier and readout chip. Pixelated devices especially can operate efficiently in very harsh rate and radiation environments such as the i…

PIPERADE: A double Penning trap for mass separation and mass spectrometry at DESIR/SPIRAL2

2021

International audience; A double Penning trap is being commissioned at CENBG Bordeaux for the future DESIR/SPIRAL2 facility of GANIL. The setup is designed to perform both high-resolution mass separation of the ion beam for trap-assisted spectroscopy, and high-accuracy mass spectrometry of short-lived nuclides. In this paper, the technical details of the new device are described. First offline tests with the purification trap are also presented, showing a mass resolving power of about 105.

JYFLTRAP: a cylindrical Penning trap for isobaric beam purification at IGISOL

2004

Abstract A Penning trap has been installed for isobaric beam purification at the IGISOL-facility at the University of Jyvaskyla. In this paper, the technical details of this new device together with results of the first tests are presented. The mass resolving power, depending on the excitation parameters and the ion species, can be as high as 145 000 and the total transmission has been determined to be 17%. In addition, it is shown that with this experimental setup it is possible to measure atomic masses up to A=120 with accuracies of approximately 50 keV .

2.45 GHz synchronised polarised electron injection at MAMI

1998

Abstract A semiconductor modelocked diode laser has been used to produce picosecond spin-polarised electron bunches from strained GaAsP photocathodes and inject them into MAMI, synchronised to the 2.45 GHz accelerating field. The laser meets the operational requirements of MAMI producing stable electron beams, with a polarisation purity of 72% and a transmission efficiency of 52% at an accelerated beam current of 10.1 μA.