Search results for "doping"

showing 10 items of 801 documents

Influence of Ag, Cu dopants on the second and third harmonic response of ZnO films

2009

International audience; Silver- and copper-doped ZnO films were prepared by radio-frequency (RF)-magnetron sputtering on glass and quartz substrates. The influence of dopants content on the microstructural evolution and optical as well as nonlinear optical (NLO) properties were investigated. It has been found that the grain sizes were enlarged with increasing of Ag, Cu dopants amount in ZnO films. The Ag or Cu doping leads to the optical band gap narrowing. Besides, the second-order NLO response of Ag- and Cu-doped ZnO films is lower than that of undoped ZnO film. The second harmonic generation (SHG) efficiency of the ZnO:Ag film was found to be higher than that of the ZnO:Cu film at the si…

Materials scienceBand gapSilver-doped ZnO film Copper-doped ZnO film RF-magnetron sputtering SHG THG[SDV]Life Sciences [q-bio]Analytical chemistryMineralogy02 engineering and technology01 natural sciencesSHGTHGCopper-doped ZnO filmSputtering0103 physical sciencesMaterials Chemistry010302 applied physicsDopantMechanical EngineeringDopingMetals and AlloysNonlinear opticsSecond-harmonic generation021001 nanoscience & nanotechnologyMicrostructureGrain sizeMechanics of MaterialsSilver-doped ZnO filmRF-magnetron sputtering0210 nano-technology
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Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy

2008

Abstract In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C -plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 1021 cm−3. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of …

Materials scienceBand gapbusiness.industryDopingCondensed Matter PhysicsMolecular physicsPulsed laser depositionOpticsX-ray photoelectron spectroscopySapphireGeneral Materials ScienceElectrical and Electronic EngineeringThin filmbusinessAbsorption (electromagnetic radiation)Ultraviolet photoelectron spectroscopySuperlattices and Microstructures
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Enhanced thermoelectric properties of lightly Nb doped SrTiO3 thin films

2021

Novel thermoelectric materials developed for operation at room temperature must have similar or better performance along with being as ecofriendly as those commercially used, e.g., BiTe, in terms of their toxicity and cost. In this work, we present an in-depth study of the thermoelectric properties of epitaxial Nb-doped strontium titanate (SrTiNbO) thin films as a function of (i) doping concentration, (ii) film thickness and (iii) substrate type. The excellent crystal quality was confirmed by high resolution transmission electron microscopy and X-ray diffraction analysis. The thermoelectric properties were measured by the three-omega method (thermal conductivity) and van der Pauw method (el…

Materials scienceBioengineering02 engineering and technology010402 general chemistryMaximum power factor01 natural scienceschemistry.chemical_compoundVan der Pauw methodSeebeck coefficientThermoelectric effectFigure of meritGeneral Materials ScienceHigh-resolution transmission electron microscopyDoping concentrationLanthanum Strontium AluminateThermo-Electric materialsbusiness.industryDopingGeneral EngineeringThermoelectric figure of meritGeneral Chemistry021001 nanoscience & nanotechnologyThermoelectric materialsAtomic and Molecular Physics and Optics0104 chemical scienceschemistryThermoelectric propertiesStrontium titanateOptoelectronicsDifferent substratesSeebeck coefficient measurement0210 nano-technologybusiness
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Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC

2019

The formation of a self-limited metallic bilayer is reported during the growth of GaN by plasma-assisted molecular beam epitaxy on graphene on (0001) SiC. Depending on growth conditions, this layer may consist of either Ga or In, which gets intercalated between graphene and the SiC surface. Diffusion of metal atoms is eased by steps at SiC surface and N plasma induced defects in the graphene layer. Energetically favorable wetting of the (0001) SiC surface by Ga or In is tentatively assigned to the breaking of covalent bonds between (0001) SiC surface and carbon buffer layer. As a consequence, graphene doping and local strain/doping fluctuations decrease. Furthermore, the presence of a metal…

Materials scienceBioengineeringCrystal growth02 engineering and technology010402 general chemistryEpitaxy7. Clean energy01 natural scienceslaw.inventionlawGeneral Materials ScienceElectrical and Electronic Engineering[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]ComputingMilieux_MISCELLANEOUS[PHYS]Physics [physics]Graphenebusiness.industryMechanical EngineeringBilayerDopingGeneral Chemistry021001 nanoscience & nanotechnology0104 chemical sciencesMechanics of Materials[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci][SPI.OPTI]Engineering Sciences [physics]/Optics / PhotonicOptoelectronicsWetting0210 nano-technologybusinessLayer (electronics)Molecular beam epitaxy
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Structural and Mössbauer study of (Sb0.70Te0.30)100-x Snx alloys with x = 0, 2.5, 5.0 and 7.5

2019

(Sb 0.70 Te 0.30 ) 100-x Sn x alloys (with x = 0, 2.5, 5.0 and 7.5 at. %)have been synthesized and characterized in order to determine the crystalline structure and properties of materials obtained upon solidification and to extract information about the location of the Sn atom in the Sb-Te matrix. Powder X-ray diffraction (XRD)has been used to determine the crystalline structure, whereas Mössbauer spectroscopy has been utilized to determine the localization and the local structure of the Sn atom in the Sb-Te matrix through the hyperfine interactions of the 119 Sn probe with its environment. We found that Sb 70 Te 30 crystallizes in a trigonal structure belonging to P-3m1 space group, while…

Materials scienceCRYSTALLINE STRUCTUREchemistry.chemical_element02 engineering and technologyCrystal structure010402 general chemistry01 natural sciencesDFTMössbauer spectroscopyAtomMaterials ChemistryHyperfine structureCHALCOGENIDE ALLOYSMechanical EngineeringDopingMetals and Alloys021001 nanoscience & nanotechnology0104 chemical sciencesCrystallographySN MÖSSBAUER SPECTROSCOPYchemistry//purl.org/becyt/ford/2 [https]Mechanics of MaterialsDensity functional theory0210 nano-technologyGround stateTin//purl.org/becyt/ford/2.5 [https]
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Effect of cobalt doping on the mechanical properties of ZnO nanowires

2016

Abstract In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases were close to theoretical strength indica…

Materials scienceCantileverScanning electron microscopeMechanical EngineeringDopingNanowirechemistry.chemical_elementNanotechnology02 engineering and technologyBending010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences0104 chemical sciencesCharacterization (materials science)chemistryFlexural strengthMechanics of MaterialsGeneral Materials ScienceComposite material0210 nano-technologyCobaltMaterials Characterization
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Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis

2015

Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…

Materials scienceChalcogenidebusiness.industryTransistorDopingGeneral Physics and Astronomychemistry.chemical_elementNanotechnologySurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsSurfaces Coatings and Filmslaw.inventionchemistry.chemical_compoundSemiconductorchemistrylawSelenideDirect and indirect band gapsPhotonicsbusinessIndiumApplied Surface Science
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TiO2/ORMOSIL Thin Films Doped with Phthalocyanine Dyes:  New Photocatalytic Devices Activated by Solar Light

2008

WOS: 000253222200065

Materials scienceChemical substancePhthalocyaninesThin filmsPhotochemistryOrmosillaw.inventionDegradationchemistry.chemical_compoundMagazinelawSol-gel processPhotocatalysisPhysical and Theoretical ChemistryThin filmDopingsol−gel TiO2/organosilica films phthalocyaninesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsGeneral EnergychemistryPhotocatalysisPhthalocyanineTitanium dioxideIrradiationScience technology and societyThe Journal of Physical Chemistry C
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Sol–Gel Microcapsulation in Silica-Based Particles: A Comparative Study

2011

Comparison between the two main sol–gel/emulsion methods to prepare microparticles made of organosilica doped with a lipophilic molecule shows that entrapment only takes place starting from O/W emulsions. In this case, however, formation of spherical microcapsules, observed when the sol–gel polycondensation is carried out in a W/O microemulsion, does not take place.

Materials scienceCondensation polymerChemical engineeringEmulsionPolymer chemistryDopingMoleculeMicroemulsionmicroparticle sol-gel encapsulation emulsionMicroparticleElectronic Optical and Magnetic MaterialsSol-gelSilicon
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High-Mobility Ambipolar Magnetotransport in Topological Insulator Bi2Se3 Nanoribbons

2021

Nanoribbons of topological insulators (TIs) have been suggested for a variety of applications exploiting the properties of the topologically protected surface Dirac states. In these proposals it is crucial to achieve a high tunability of the Fermi energy, through the Dirac point while preserving a high mobility of the involved carriers. Tunable transport in TI nanoribbons has been achieved by chemical doping of the materials so to reduce the bulk carriers' concentration, however at the expense of the mobility of the surface Dirac electrons, which is substantially reduced. Here we study bare ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ nanoribbons transferred on a variety of oxide substrates and dem…

Materials scienceCondensed matter physicsAmbipolar diffusionTopological insulatorDopingDirac (software)General Physics and AstronomyField effectFermi energyElectronSurface statesPhysical Review Applied
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