Search results for "doping"
showing 10 items of 801 documents
DESIGN, SYNTHESIS AND ATOMIC/ELECTRONIC STRUCTURAL ANALYSIS OF HYBRID HALIDE PSEUDO-PEROVSKITES: PERSPECTIVES AND OPEN ISSUES FOR NOVEL THERMOELECTRI…
2022
Thermally induced doping in controlled atmosphere on Graphene
2017
Since its experimental breakthrough discovery in 2004, Graphene (Gr) paved the way for the study of the "flatland" of two dimensional (2D) materials. These systems are an emerging topic of interest in solid state physics and amterial sciences, but nont only, and today count a family of monoatomic layer of C atoms in hexgonal honey comb crystalline structure.
Anodic TiO2 in ReRAM: Influence of Si-doping on the Resistive Switching Properties of Titanium Oxide
2016
TiO2 has attracted much attention due to its potential widespread applications, including capacitors, photocatalysis, solar energy conversion and, more recently, redox-based random access memories (ReRAM). For micro and nano-electronics applications, TiO2 is usually grown through Chemical and Physical Vapour Deposition techniques, such as Atomic Layer Deposition (ALD), Pulsed Laser Deposition (PLD), Sputtering and so on. In ReRAM field, the control of oxide structure (crystallinity, defects concentration etc.) and the choice of electrodes are crucial to have resistive switching phenomena inside the oxide. Thus, anodizing can be proposed as a simple and low cost way to grow TiO2 and to tune …
N-Doped Anatase/Rutile Photocatalysts for the Synthesis of Aromatic Aldehydes Under Ultraviolet and Solar Irradiation
2015
N-doped anatase/rutile photocatalysts were prepared by a sol-gel method, using TiCl4 as TiO2 precursor and urea as N-dopant source. The catalysts required a thermal treatment at temperature higher than 300 degrees C to achieve actual nitrogen doping; this treatment also allowed obtaining crystalline and hydrophobic samples. Moreover, nitrogen doping modified the surface of samples by increasing the anatase to rutile phase ratio and hydrophilicity. The catalysts were characterized by BET specific surface area, XRD, ESEM, TGA, FT-IR, DRS and XPS measurements, with particular attention to the assessment of the N-doping effect. It was found that XPS analysis should be used together with DRS and…
Fighting doping: sports and criminal law regulatory systems compared
2015
L’OPERATIVITÀ DEL VINCOLO DI GIUSTIZIA NEL REATO DI DOPING
2014
Fattori di rischio per doping in popolazione giovanile.
2012
L’epoca della dipendenza… sportiva
2014
Boron doping of silicon rich carbides: Electrical properties
2013
Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.