Search results for "electrical resistivity"

Integrated full 3D geoelectrical and GPR tomographies in the Ambulatory of the roman “Villa del Casale”(Piazza Armerina)

2008

The “Villa del Casale” is a wonderful Roman Villa excavated in the archaeological site of Piazza Armerina (Sicily) in 1929. Its interest is mainly to be referred to the floor mosaics, among the largest and most beautiful ones of Roman times, of superlative quality. The floor of the Corridor is covered by a wonderful mosaic depicting the hunt and capture of wild animals, so that it is called the “Corridor of the Great Hunting Scene”. The Villa is now under restoration, and during the planning of the restoration a 3D electrical resistivity tomography was performed on the corridor by using an acquisition grid composed by 704 electrodes. Furthermore 25 GPR profiles with 400 MHz antenna were acq…

The electromigration and diffusion of hydrogen in molybdenum

1990

Abstract The electromigration and diffusion of hydrogen atoms in molybdenum were investigated using the resistance method in the temperature range 293–773 K. The following dependence of the diffusion coefficient D and electrical mobility vE on temperature were obtained: D = (5.3 ± 1.53) × 10 −10 exp {− (0.8 ± 0.01) eV kT } { m 2 s −1 } v E = (1.24 ± 0.19) × 10 −8 exp {− (0.9 ± 0.01) eV kT }{ m 2 ( V s ) −1 } . The hydrogen migrates towards the cathode and the effective valency grows with temperature, fulfilling the relation Z eff = (1.42 ± 0.03) − (5.0 ± 0.2) × 10 −8 (Ω m ) ρ ; where ρ is the specific electric resistance.

Back Cover: Electrical Conductivity and Strong Luminescence in Copper Iodide Double Chains with Isonicotinato Derivatives (Chem. Eur. J. 48/2015)

2015

Misinterpretation caused by 3D effects on 2D Electrical Resistivity Tomography: tests on simple models

2018

Summary The aim of this work is to evaluate the effects of 2D inversion of electrical resistivity data when in presence on 3D structures by testing synthetic and experimental models. Several numerical simulations have been calculated for different resistivity models and 2D datasets were extracted to study and quantify the effects of 2D inversion on 3D structures. Results have been compared with field texts carried out in quarrying sites. The main tests here presented simulates prism-shaped cavities with a square vertical section of 1 × 1 size and a variable lateral extension d, from 1 to infinity (this latter being a 2D tunnel model). Inversion of predicted data show that 2D tomography does…

Dual atmosphere study of the K41X stainless steel for interconnect application in high temperature water vapour electrolysis

2015

Abstract High temperature water vapour electrolysis (HTE) is one of the most efficient technologies for mass hydrogen production. A major technical difficulty related to high temperature water vapour electrolysis is the development of interconnects working efficiently for a long period. Working temperature of 800 °C enables the use of metallic materials as interconnects. High temperature corrosion behaviour and electrical conductivity of a commercial stainless steel, K41X (AISI 441), were tested in HTE dual atmosphere (95%O 2 -5%H 2 0/10%H 2 -90%H 2 O) at 800 °C. The alloy exhibits a very good oxidation resistance compared to single atmosphere tests. However, a supplied electrical current s…

Influence of the three dimensionality of the HF electromagnetic field on resistivity variations in Si single crystals during FZ growth

2000

Abstract Three-dimensional numerical modelling is carried out to analyse the floating zone crystal growth with the needle-eye technique used for the production of high-quality silicon single crystals with large diameters ( ⩾100 mm ). Since the pancake inductor has only one turn, the EM field and the distribution of heat sources and EM forces are only roughly axisymmetric. The non-symmetry together with crystal rotation reflects itself on the hydrodynamic, thermal and dopant concentration fields in the molten zone and causes variations of resistivity in the grown single crystal, which are known as the so-called rotational striations. The non-symmetric high-frequency electromagnetic field of …

The resistivity and thermopower of amorphous Mg-Zn alloys

1983

The resistivity and thermopower of amorphous Mg-Zn alloys have been computed as a function of temperature and composition. The diffraction model incorporating the dynamical partial structure factors is applied. The effect of the electron mean free path is investigated. The authors find that the resistivity is well described by the model, and that the inclusion of the mean free path does not change the results considerably. In the case of thermopower the diffraction model turns out to be inadequate: it gives a composition dependence which is against the experimental evidence. This suggests that there exists another scattering mechanism, which is not accounted for by the diffraction model. Th…

Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure

1997

The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.

High-Temperature Hall Measurements on BaSnO3Ceramics

2005

Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050°C on n-type semiconducting BaSnO3ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900°C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900°C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.

Tin-related double acceptors in gallium selenide single crystals

1998

Gallium selenide single crystals doped with different amounts of tin are studied through resistivity and Hall effect measurements in the temperature range from 30 to 700 K. At low doping concentration tin is shown to behave as a double acceptor impurity in gallium selenide with ionization energies of 155 and 310 meV. At higher doping concentration tin also introduces deep donor levels, but the material remains p-type in the whole studied range of tin doping concentrations. The deep character of donors in gallium selenide is discussed by comparison of its conduction band structure to that of indium selenide under pressure. The double acceptor center is proposed to be a tin atom in interlayer…