Search results for "electron-beam lithography"
showing 6 items of 36 documents
Nano-lithography by electron exposure using an Atomic Force Microscope
1999
Abstract We have used a conductive Atomic Force Microscope (AFM) tip to expose a very thin resist film. An exposing current of low energy electrons was induced from the tip to the substrate by applying a small bias voltage. Uniform resist films as thin as 10 nm were fabricated using the Langmuir–Blodgett technique. To orient the defined pattern and to make electrical connections a special larger scale alignment structure was first defined by conventional electron beam lithography, either directly in the Langmuir–Blodgett resist film or in a separate first lift-off process with a thicker resist. The results from the one resist process gave conducting 50 nm lines with a 60 A thick vacuum depo…
Charge dissipation in e-beam lithography with Novolak-based conducting polymer films
2008
Charging of common resist materials during electron beam (e-beam) writing leads to deflection of the electron beam path, which can result in significant pattern displacement. Here we report a new conducting polymer to eliminate charging. A common approach is to place the conducting layer underneath the e-beam resist layer. Conductivity equal or greater than 10(-4) S cm(-1) has been reported to prevent pattern displacement. Some other properties such as a flat surface layer, chemical inertness and insolubility in both the top resist solvent and the developer are also necessary. The way to achieve all these properties consisted in synthesizing a conducting polymer inside an insulating polymer…
Direct Surface Relief Formation in Polymer Films
2013
Due to active development of nanoelectronics, the studies of methods of nanorelief surface formation in different materials, in particular polymers are very important. Organic polymer films in consequence of their dielectric and optical properties have been used as basis of these devices. In this paper, the possibility of UV optical record and electron beam lithography in different type of polymeric films was studied. Mechanisms of molecular structure changes: photoisomerization, destruction, cross-linking and oxidation have been discussed. The results of UV illumination of polyurethanes, polyacrylates, and some block-copolymers were described. The element analysis of polybutadiene block co…
UV optical record and electron beam lithography in polymer films
2012
Possibility of UV optical record and electron beam lithography in different type of organic polymer films was studied. Mechanisms of molecular structure changes: photoisomerization, destruction, cross-linking and oxidation have been discussed. The results of UV illumination of polyurethanes, polyacrilates, and some block-copolymers are described. The element analysis of polyisoprene block copolymer was performed before and after UV illumination, and the changes in transmission spectra of the polymer film were measured. The resolution of electron beam lithography on polymer films was studied. In the polyisoprene block copolymer film the oxidation polymerization was ascertain at UV-illuminati…
Surface plasmon near-field imaging of very thin microstructured polymer layers.
2004
We report on the near-field imaging of microstructured polymer layers deposited on an homogeneous metal thin film on which a surface plasmon mode is excited. The microstructures in the polymer layers are designed by electron beam lithography, and the near-field imaging is performed with a photon scanning tunneling microscope (PSTM). We show that, despite their very small height, the microstructures can be conveniently imaged with a PSTM thanks to the field enhancement at the surface of the metal thin film supporting the surface plasmon. The influence of the illumination conditions on the contrast of the PSTM images is discussed. In particular, we show that both the field enhancement and the…
Exploring integration prospects of opal-based photonic crystals
2003
Different methods of functionalisation of thin opal films are discussed, including synthesis of opals on pre-patterned substrates, post-synthesis electron beam lithography, preparation of opals with heterogeneous photonic band gap structure and integrating opals with light sources. These approaches have been tested experimentally and key technological problems have been identified.