Search results for "electronic propertie"

Effect of alloying elements on the electronic properties of thin passive films formed on carbon steel, ferritic and austenitic stainless steels in a …

2014

The influence of alloying elements on the electrochemical and semiconducting properties of thin passive films formed on several steels (carbon steel, ferritic and austenitic stainless steels) has been studied in a highly concentrated lithium bromide (LiBr) solution at 25 °C, by means of potentiodynamic tests and Mott Schottky analysis. The addition of Cr to carbon steel promoted the formation of a p-type semiconducting region in the passive film. A high Ni contentmodified the electronic behaviour of highly alloyed austenitic stainless steels.Mo did notmodify the electronic structure of the passive films, but reduced the concentration of defects.

Electronic properties of *-oriented thin films

2007

Abstract To perform high precision measurements of the transport anisotropy, epitaxial, a *-oriented thin films of UPd 2 Al 3 have been prepared on LaAlO 3 (1 1 0) substrates. The critical temperature T c ≈ 1.75 K and the upper critical field B c 2 ≈ 3 T are comparable to typical bulk values. In contrast to UNi 2 Al 3 , we observed only a weak anisotropy in directional resistivity measurements, especially no dependence of the superconducting transition temperature on the direction of the applied current. Hall effect measurements show two characteristic minima at T = 16 K ≈ T N and T ≈ 6 K , which corresponds to features seen in earlier measurements on c *-oriented films.

DFT calculations on subnanometric metal catalysts: a short review on new supported materials

2018

Metal clusters have been used in catalysis for a long time, even in industrial production protocols, and a large number of theoretical and experimental studies aimed at characterizing their structure and reactivity, either when supported or not, are already present in the literature. Nevertheless, in the last years the advances made in the control of the synthesis and stabilization of subnanometric clusters promoted a renewed interest in the field. The shape and size of sub-nanometer clusters are crucial in determining their catalytic activity and selectivity. Moreover, if supported, subnanometric clusters could be highly influenced by the interactions with the support that could affect geo…

Engineering half-Heusler thermoelectric materials using Zintl chemistry

2016

In this Review, the structure, bonding and defects of half-Heusler compounds are explained in terms of the framework of Zintl (or valence-precise) chemistry. This deeper understanding of the structure and electronic properties of half-Heusler compounds should aid the design of improved thermoelectric materials.

Study of the Partial Substitution of Pb by Sn in Cs-Pb-Sn-Br Nanocrystals Owing to Obtaining Stable Nanoparticles with Excellent Optical Properties.

2018

Halide perovskites are revolutionizing the photovoltaic and optoelectronic fields with outstanding performances obtained in a remarkably short time. However, two major challenges remain: the long-term stability and the Pb content, due to its toxicity. Despite the great effort carried out to substitute the Pb by a less hazardous element, lead-free perovskite still remains more unstable than lead-containing perovskites and presents lower performance as well. In this work, we demonstrate the colloidal preparation of Cs–Pb–Sn–Br nanoparticles (NPs) where Sn is incorporated up to 18.8%. Significantly, we have demonstrated that the partial substitution of Pb by Sn does not produce a deleterious e…

k-resolved electronic properties of ternary heavy fermion systems

1998

Electronic Properties of Thermal Oxides on Ti and Their Influence on Impedance and Photoelectrochemical Behavior of TiO2 Nanotubes

2017

Thermal oxidation of titaniumwas carried out at 350◦C, 450◦C, and 550◦C for 2 h or 12 h.X-rayDiffraction and Raman Spectroscopy suggest that the thermal oxides are scarcely crystallinewhen the annealing temperature is low, while both anatase and rutile are present for high annealing temperature and time. Photoelectrochemical measurements allowed estimation of a bandgap decreasing from 3.35 eV to 3.15 eV with increasing annealing temperature. The impedance spectra confirmed the formation of n-type semiconductors, with an impedance strongly decreasing on going from a reverse bias toward a forward bias regime. TiO2 nanotubes grown by anodizing Ti in NH4F and water containing ethylene glycol so…

The Effect of Nb Incorporation on the Electronic Properties of Anodic HfO2

2017

Hafnium oxide and Nb doped HfO2 were grown by anodizing sputtering-deposited Hf and Hf-4at.%Nb. Photoelectrochemical characterization was carried out in order to estimate solid state properties such as band gap, flat band potential and electrons internal photoemission threshold energy as a function of thickness and composition of anodic oxides. Optical transitions at energy lower than the band gap value of the investigated anodic films were evidenced, and they are attributed to optical transitions involving localized states inside the band gap. Such states were located at 3.6 eV and 3.9 eV below the conduction band edge for the Nb free and Nb containing hafnium oxide, respectively. Impedanc…

Electronic structure of poly(p-(disilanylene)phenylene)

1996

Abstract We present the geometrical and electronic structures of several isomers of poly(p-(disilanylene)phenylene), The structural analysis, performed at the 3-21G* level, shows that the isomers with the phenylene group perpendicular to the silicon backbone are the more stable conformations, displaying almost the same energy. The electronic properties, as obtained from the valence-effective Hamiltonian (VEH) band structure calculations, strongly depend on the disposition of the phenylene group into the polymeric backbone. The VEH predicts a wide and asymmetric absorption band in excellent agreement with UV experimental data.

Electronic properties of carbon nanotubes under torsion

2012

A computationally-effective approach for calculating the electromechanical behavior of SWNTs and MWNTs of the dimensions used in nano-electronic devices has been developed. It is a mixed finite element-tight-binding code carefully designed to realize significant time saving in calculating deformation-induced changes in electrical transport properties of the nanotubes. The effect of the MWNT diameter and chirality on the conductance after mechanical deformation was investigated. In case of torsional deformation results revealed the conductance of MWNTs to depend strongly on the diameter, since bigger MWNTs reach much earlier the buckling load under torsion their electrical conductivity chang…