Search results for "electronics"
showing 10 items of 4340 documents
Conformationally rigid molecular and polymeric naphthalene-diimides containing C6H6N2 constitutional isomers
2021
Organic thin films based on naphthalenediimides (NDIs) bearing alkyl substituents have shown interesting properties for application in OLEDs, thermoelectrics, solar cells, sensors and organic electronics. However, the polymorphic versatility attributed to the flexibility of alkyl chains remains a challenging issue, with detrimental implications on the performances. Aryl analogues containing C6H6N2 constitutional isomers are herein investigated as one of the possible way-out strategies. The synthesis of molecular and polymeric species is described, starting from naphthaleneteracarboxyldianhydride with isomeric aromatic amines and hydrazine. The materials are fully characterized by spectrosco…
ELECTRODEPOSITION OF NOVEL POLY(NAPHTHALENEDIIMIDE-QUATERTHIOPHENE) THIN FILMS AND APPLICATIONS IN PLASTIC OPTOELECTRONICS DEVICES
2013
A novel symmetric naphthalenediimide-quaterthiophene derivative (NDIT4d) has been polymerized on different substrates including glassy carbon and ITO/PET electrodes by means of electrochemical methods. XPS and UV-VIS spectroscopy as well as cyclic voltammetry have been employed for characterizing the thin film chemical features, the band gap and the HOMO and LUMO levels. DFT computational studies were in close agreement with the experimental observables also showing intriguing geometrical effects on the band gap energy values. The comparison of the energy levels locations of the electrodeposited poly(naphthalenediimide-quaterthiophene) derivative (e-PNDIT4) and P3HT thin films transferred b…
Raman signal reveals the rhombohedral crystallographic structure in ultra-thin layers of bismuth thermally evaporated on amorphous substrate
2021
Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films expo…
Composite layer-based analytical models for tool–chip interface temperatures in machining medium carbon steels with multi-layer coated cutting tools
2006
Abstract This investigation is devoted to the thermal problems in dry orthogonal turning of a C45 medium carbon steel with natural contact tools treated with multi-layer coatings with an intermediate Al 2 O 3 layer. New hybrid analytical models for estimating heat partition to the chip and the tool–chip interface temperatures were proposed. Furthermore, the physics-based modelling concept, which applies composite layer approach was developed to estimate the average and maximum steady-state tool–chip interface temperatures in orthogonal turning. The model predictions were compared to appropriate experimental process data using natural tool-work thermocouples and other simulated and measured …
Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
2017
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40nm) nitride spacers. As a result a single, silicide island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices fabricated using e-beam lithography is…
Near-field probing of active photonic-crystal structures
2002
We report a study of the optical near field of an active integrated component operating near the 1.55-mum telecommunications wavelength. The device is based on a two-dimensional photonic crystal etched in a suspended InP membrane. Topographic as well as optical information is collected by use of a scanning near-field optical microscope in collection mode, providing information about the local distribution of the losses.
Optical Probing (EOFM/TRI): A large set of complementary applications for ultimate VLSI
2013
International audience; Electro Optical Techniques (EOFM: Electro Optical Frequency Mapping and EOP: Electro Optical Probing) and Dynamic Light Emission Techniques (TRE: Time Resolved Emission and TRI: Time Resolved Imaging) are dynamic optical probing techniques widely used at IC level for design debug and defect localization purpose. They can pinpoint the origin of timing issue or logic fault in up to date CMOS devices. Each technique has its advantages and its drawbacks allowing a common set of applications and more specific ones. We have been involved in the development of the most advanced techniques related to EOFM and TRI on various devices (down to 28nm technology). What we can expe…
Improvement of DSSC performance by voltage stress application
2016
Dye-sensitized solar cells (DSSCs) are promising third generation photovoltaic devices given their potential low cost and high efficiency. Some factors still affect DSSCs performance, such structure of electrodes, electrolyte compositions, nature of the sensitizers, power conversion efficiency, long-term stability, etc. In this work we discuss the effect of electrical stresses, which allow to improve DSSC performance. We have investigated the outcomes of forward and reverse DC bias stress as a function of time, voltage, and illumination level in the DSSCs sensitized with the N719, Ruthenium complex based dye. We demonstrate that all the major solar cell parameters, i.e., open circuit voltag…
Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs
2019
GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high frequencies and voltages are also needed. Its wide band gap (WBG), large breakdown electric field, and thermal stability improve actual silicon performances. However, at the moment, GaN HEMT technology suffers from some reliability issues, one of the more relevant of which is the dynamic on-state resistance (R) regarding power switching converter applications. In this study, we focused on the drain-to-source on-resistance (R) characteristic…
Room-Temperature Micropillar Growth of Lithium-Titanate-Carbon Composite Structures by Self-Biased Direct Current Magnetron Sputtering for Lithium Io…
2019
Here, an unidentified type of micropillar growth is described at room temperature during conventional direct-current magnetron sputtering (DC-MS) deposition from a Li4Ti5O12+graphite sputter target under negative substrate bias and high operating pressure. These fabricated carbon-Li2O-TiO2 microstructures consisting of various Li4Ti5O12/Li2TiO3/LixTiO2 crystalline phases are demonstrated as an anode material in Li-ion microbatteries. The described micropillar fabrication method is a low-cost, substrate independent, single-step, room-temperature vacuum process utilizing a mature industrial complementary metal-oxide-semiconductor (CMOS)-compatible technology. Furthermore, tentative considerat…