6533b85dfe1ef96bd12bdd59

RESEARCH PRODUCT

Raman signal reveals the rhombohedral crystallographic structure in ultra-thin layers of bismuth thermally evaporated on amorphous substrate

Carlos SabaterKim AkiusCarlos Rodríguez-fernándezCarlos Rodríguez-fernándezAndrés CantareroMauricio M. De LimaJ. M. Van Ruitenbeek

subject

Materials scienceXRDFOS: Physical scienceschemistry.chemical_element02 engineering and technologySubstrate (electronics)Crystal structure01 natural sciencesBismuthsymbols.namesakeFísica AplicadaMesoscale and Nanoscale Physics (cond-mat.mes-hall)0103 physical sciencesGeneral Materials Science010306 general physicsRamanCondensed Matter - Materials ScienceThin layersCondensed Matter - Mesoscale and Nanoscale PhysicsMechanical EngineeringThermal evaporationMaterials Science (cond-mat.mtrl-sci)Trigonal crystal system021001 nanoscience & nanotechnologyCondensed Matter PhysicsEngineering physicsAmorphous solidchemistryMechanics of MaterialsBisymbolsChristian ministry0210 nano-technologyRaman spectroscopyUltra-thin layer

description

Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films exposed to ambient conditions do not suffer major surface oxidation.

10.1016/j.mseb.2021.115240http://hdl.handle.net/1887/3185811