Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst
Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [101¯0] direction. Interestingly, the average wire diameter has been found to …
Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…
The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy
We unambiguously show that the signature of Te-rich bismuth telluride is the appearance of three new peaks in the Raman spectra of Bi2Te3, located at 88, 117 and 137 cm−1 . For this purpose, we have grown stoichiometric Bi2Te3 nanowires as well as Te-rich nanowires. The absence of these peaks in stoichiometric nanowires, even in those with the smallest diameter, shows that they are not related to confinement effects or the lack of inversion symmetry, as stated in the literature, but to the existence of Te clusters. These Te clusters have been found in nonstoichiometric samples by high resolution electron microscopy, while they are absent in stoichiometric samples. The Raman spectra of the l…
Raman signal reveals the rhombohedral crystallographic structure in ultra-thin layers of bismuth thermally evaporated on amorphous substrate
Under the challenge of growing a single bilayer of Bi oriented in the (111) crystallographic direction over amorphous substrates, we have studied different thicknesses of Bi thermally evaporated onto silicon oxide in order to shed light on the dominant atomic structures and their oxidation. We have employed atomic force microscope, X-ray diffraction, and scanning electron microscope approaches to demonstrate that Bi is crystalline and oriented in the (111) direction for thicknesses over 20 nm. Surprisingly, Raman spectroscopy indicates that the rhombohedral structure is preserved even for ultra-thin layers of Bi, down to $\sim 5$ nm. Moreover, the signals also reveal that bismuth films expo…
Near band edge and defect emissions in wurtzite Cd0.025Mg0.10Zn0.875O nanocrystals
Abstract We report on near band edge and local defects emissions in Cd0·025Mg0·10Zn0·875O (CdMgZnO) nanoparticles (NPs) as a function of temperature, where a strong temperature-dependent near-infrared emission around 1.7 eV (~730 nm) has been observed. The NPs were synthesized by a modified sol-gel method and were annealed at 750 °C after growing. The crystallographic parameters have been determined by 2-dimensional synchrotron x-ray diffraction (XRD) and conventional XRD analysis, confirming their growth within the wurtzite phase with a preferred orientation along the (101) plane and an apparent crystallite size of 52.72 ± 0.18 nm. This apparent crystallite size is consistent with the near…
Manufacturing Te/PEDOT Films for Thermoelectric Applications
In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E1, A1, and E2. The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an a…