Search results for "electronics"
showing 10 items of 4340 documents
Energy structure of thin films of carbazole derivatives with metal electrodes
2011
Study of charge carrier transport in organic electroluminescent devices, organic photovoltaic devices, and organic field-effect transistors is one of the most important points. In order to realize comparable electron and hole transport in thin organic films with electrodes the energy structure of such devices are of great importance. In this work, we have studied electrical properties and energy structure of two carbazole derivatives. The threshold energy of photoconductivity quantum efficiency is 2.90 eV and optical energy gap is 3.3 eV in thin films is obtained. The values of work function of ITO, Au, Cu and Pd electrodes are energetically close to conductivity level of holes and holes in…
Non radiative recombination centers in ZnO nanorods
2013
ABSTRACTNowadays, the nature of the non radiative recombination centres in ZnO is a matter of controversy; they have been related to extended defects, zinc vacancy complexes, and surface defects, among other possible candidates. We present herein the optical characterization of catalyst free ZnO nanorods grown by atmospheric MOCVD by microRaman and cathodoluminescence spectroscopies. The correlation between the defect related Raman modes and the cathodoluminescence emission along the nanorods permits to establish a relation between the non radiative recombination centers and the defects responsible for the local Raman modes, which have been related to Zn interstitial complexes.
Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode
2011
In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (µPL) spectroscopy experiments a…
Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique
2011
Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which has been recently implemented at IMEM-CNR (Parma, Italy). In this technique, the crystal is grown in an open quartz crucible fully encapsulated by a thin layer of liquid boron oxide. This method prevents contact between the crystal and the crucible, thereby allowing larger single grains with a lower dislocation density to be obta…
<title>Holographic recording in amorphous chalcogenide semiconductor thin films</title>
2000
ABSTRACT The photoinduced changes ofoptical properties and holographic recording in amorphous chalcogenide semiconductor As-S- Se and As2S3 thin films have been studied. The possibilities of the practical applications of these materials as the photoresists for the production of the relief holograms and holographic optical elements are discussed. It is shown that theself-enhancement phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light orthermal treatment can be used to increase the diffraction efficiency ofthe holograms.Keywords: chalcogenide semiconductors, amorphous films, photoresists, photoinduced processes, relaxation processes,self-enhancement of h…
Holographic recording in amorphous chalcogenide thin films
2003
A review of the recent advances and developments in the practical application of chalcogenide materials is presented, focusing special attention on holography and lithography using amorphous chalcogenide thin films.
Amorphous As–S–Se semiconductor resists for holography and lithography
2002
Abstract The photo- and electron-beam induced changes in solubility of thin films of the amorphous chalcogenide semiconductors As–S–Se and As 2 S 3 have been studied. The possibilities of practical application of these materials as resists for the production of relief holograms and holographic optical elements are discussed. It is shown that the self-enhancement (SE) phenomenon of holographic recording in amorphous chalcogenide semiconductor films by light or thermal treatment can be used to increase the diffraction efficiency (DE) of the holograms.
Fourth order cascaded Raman shift in As38Se62 chalcogenide suspended core fiber pumped at 1.995 μm
2011
Fourth order cascaded Raman wavelength shift is demonstrated in As 38 Se 62 suspended core fiber using 1995 nm nanosecond source. The measured Raman gain coefficient is∼2×10−11 m/W at 1995 nm. The Raman peaks are reproduced by numerical simulations.
Distributed feedback lasing in cellulose films
2013
Cellulose derivatives, because of their molecular structure and chirality, can self-assemble to form spatially periodic cholesteric liquid crystal phases. We have synthesized and produced solid cross-linked cholesteric cellulose based films optimized to provide high reflectivity. Since these films are self-assembled photonic bandgap materials, they may be expected to show distributed feedback lasing. By doping samples with fluorescent dyes and optically pumping thin films of these materials, we were able to demonstrate, to the best of our knowledge, for the first time, mirrorless band-edge lasing in cellulose derivatives.
Long-cavity all-fiber ring laser actively mode locked with an in-fiber bandpass acousto-optic modulator.
2013
We demonstrate low-frequency active mode locking of an erbium-doped all-fiber ring laser. As the mode locker, we used a new in-fiber bandpass acousto-optic modulator showing 74% modulation depth, 3.7 dB power insertion losses, 4.5 nm of optical bandwidth, and 20 dB of nonresonant light suppression. The laser generates 330 ps mode-locked pulses over a 10 ns pedestal, at a 1.538 MHz frequency, with 130 mW of pump power. Fil: Cuadrado Laborde, Christian Ariel. Universidad de Valencia; España. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico La Plata. Centro de Investigaciones Opticas (i); Argentina. Provincia de Buenos Aires. Gobernación. Comisión de In…