Search results for "electronics"
showing 10 items of 4340 documents
PATTERNED LASER CRYSTALLIZATION OF a-Si
2009
PATTERNED LASER CRYSTALLIZATION OF a-SiThin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.
Er:YAG laser giant-pulse generation
2002
Three possibilities of mid-infrared Er:YAG lasers Q-switching were investigated: mechanical and two electro-optical ones. The mechanical method of Q-switching was proved by using of a rotating mirror placed inside the resonator; Pockels or Kerr cells were used for the electro-optical Q-switching. The Pockels cell was constructed on the basis of the Brewster angle cut LiNb03 crystal; the Kerr cell used a ceramic PLZT material. In all the three cases the Er:YAG laser resonator was plan parallel and it consisted of the rear copper mirror and output coupler with 50-70% reflectivity. The Er:YAG crystal was pumped by one xenon flashlamp in a single elliptical silver coated cavity. The generated g…
Acousto-plasmonic coupling in engineered metal nanocomposites
2010
This work shows the production of self-assembled elongated nano-objects embedded in an oxide host oriented perpendicular to the substrate and their acousto-plasmonic dynamics. Electromagnetic “hot spots” are created that activate anomalous Raman vibrational modes.
Chirped fibre Bragg gratings for phased-array antennas
1997
A variable delay line for phased-array antennas based on a chirped fibre Bragg grating is demonstrated. The time delay of a microwave modulating signal is modified by scanning in wavelength a chirped grating. In this initial experiment, time delay variations up to 556 ps have been achieved using a grating of 0.4 nm bandwidth and 6 cm length and modulating in the frequency range 390 MHz-5.20 GHz.
Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method
2015
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveal…
Multilayer (Al,Ga)N Structures for Solar-Blind Detection
2004
We report on solar-blind metal-semiconductor-metal (MSM) detectors fabricated on stacks of (Al,Ga)N layers with different Al mole fraction. These structures were grown by molecular beam epitaxy on sapphire substrates to allow backside illumination and a low-temperature GaN buffer layer. They consist of a 0.3-0.4-/spl mu/m active layer grown on a thick (Al,Ga)N window layer (/spl ap/1 /spl mu/m) that is transparent at the wavelength of interest. Different Al contents were used in the window layer. We observed that, in general, samples with a high Al content were cracked, which is explained in terms of mechanical strain. MSM photodetectors fabricated on these samples showed large leakage curr…
Plasmonic-assisted Mach-Zehnder Interferometric photonic sensor using aluminum waveguides
2020
We demonstrate a CMOS compatible interferometric plasmo-photonic sensor exploiting SisN4 photonic and aluminum (Al) plasmonic stripe waveguides. Experimental evaluation revealed bulk sensitivity of 4764 nm/RIU, holding promise for ultra-sensitive and low cost sensing devices.
Texturing of Indium Phosphide for Improving the Characteristics of Space Solar Cells
2021
This paper discusses and demonstrates the usefulness and prospects of using textured layers of indium phosphide as a material for space solar cells. Such designs improve the performance of the photovoltaic converter by increasing the effective area and surface roughness. Thus, it minimizes the background reflectivity of the surface. Textured layers on the InP surface were obtained by electrochemical etching using a bromous acid solution.
Band unpinning and photovoltaic model for P3HT:PCBM organic bulk heterojunctions under illumination
2008
Capacitance analysis of P3HT:PCBM bulk heterojunction solar cells, in dark and under illumination, shows a linear Mott-Schottky characteristic at moderate reverse bias, indicating p-doping of the organic blend. The flatband potential under illumination is displaced negatively about 0.6 V with respect to dark conditions. A basic photovoltaic model is developed to explain this, in terms of electron transfer via surface states at the metal/organic interface. Surface states with a slow exchange kinetics, become charged under illumination, unpinning the band and decreasing the depletion layer at the electron extraction contact. This becomes a major factor limiting the performance of bulk heteroj…
Hybrid molecular materials for optoelectronic devices
2005
Hybrid molecular materials based on semiconductor nanocrystalline metal oxides are a subject of intense research for the development of optoelectronic devices. Such devices follow the strategy of combining high surface area mesoporous materials with optically and electrochemically active molecules. Photovoltaic devices, molecular sensors and biosensors are some of the examples discussed in this paper.