Search results for "electronics"

1/f noise in streaming electrification

2005

The paper presents the measurement results of the noise generated by static electricity. The tests were performed in the spinning-disk system. Insulation liquid (transformer oil) was used for electrostatic charge generation. The element measured was the current flowing to the disk surface. A stochastic term is present in the current. Existance of this term is due to the complex chemical constitution of the oil. A relaxation of the polar molecules has inertial character. The spreading of a large amount of the relaxation phenomena can lead to forming a compounded spectrum close in shape to 1/f noise. Power spectral density of the polarization was defined for periodic step function. The calcul…

Noise and Microwave Properties of Set-Transistors

2002

Electron tunneling through a small tunnel junction with capacitance C 0 is suppressed by the so-called Coulomb blockade if the charging energy E c = e 2/2C∑ is larger than the thermal energy k B T 1. This effect is observed in a single electron tunneling transistor (SETT), which is a nano-meter size three-terminal device in which two leads connect to a small metallic island through two tunnel junctions. The excess charge on the island is regulated by the potential of the capacitively coupled gate electrode. The SETT is a very sensitive electrometer, noise levels of 10−5e/√Hz have been reached.2,3 A similar device, the electron pump, is made by connecting two or more islands in series throug…

Carbon Nanotube Radio-Frequency Single-Electron Transistor

2004

We discuss the theory of the radio-frequency single-electron transistor and the measurements that use multiwalled carbon nanotubes as active elements. Our devices made of plasma-enhanced chemical-vapor-deposition nanotubes yield charge sensitivities of 10-20 μe/ $$\sqrt {Hz}$$ . PACS numbers: 73.23.Hk, 73.63.Fg, 85.35.Gv, 85.35.Kt.

B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible

2009

The integration of metal oxide gas sensing layers into CMOS electronic still a challenge especially due to the high operating temperatures that do not comply with silicon transistor limits , even more critical, and metal oxide annealing temperatures. External electric fields will allow control over the energy levels of the sensing layer and thus over adsorption sensitivity, consequently the interaction between gas and sensitive layer is modulated. As the absorbed gas on the surface produces a band bending, it changes conduction paths allowing gas detection through resistance measurements. With this configuration, field switch offers fast desorption and thus handling of low temperature respo…

Extended gate electrode arrays for extracellular signal recordings

2000

Abstract We have fabricated arrays of planar gold electrodes arranged in a matrix of 8×8 with active areas ranging from 6 to 30 μm in diameter. An electronic amplification circuitry based on commercial junction field-effect transistors was used where the gold sensor fields act as extended gate electrodes (EGE) of the transistors, which leads to a new approach for long-term extracellular recording systems in vitro. The high input resistance of the amplification circuitry allows the use of small planar bare gold electrodes without further modification which therefore extends the frequency range of the measuring set-up down to the DC-level. The performance of our recording system has been test…

Organic Transistors: Supramolecular Order of Solution-Processed Perylenediimide Thin Films: High-Performance Small-Channel n-Type Organic Transistors…

2011

Photonic crystals based on two-layer opaline heterostructures

2002

AbstractOptical properties of several heterostructures representing two-layer opaline photonic crystals have been examined. Two separate stop-bands have been observed both in transmission and emission spectra. The effect of the interface disorder on the optical spectra was not observed, probably, due to the insufficient degree of order of the opaline layers.

Broadband asymmetric transmission of THz radiation through double metallic gratings

2013

We analyse numerically and experimentally the asymmetric transmission through sub-wavelength double metallic gratings. The possibility of achieving a broadband unidirectional transmission of THz waves through the grating is confirmed. The proposed gratings allow for efficient one-way transmission in the wavelength range from 2.5 to 3.5 mm.

Hybrid Inorganic‐Organic White Light Emitting Diodes

2020

This chapter reviews the state of the art of materials, technologies, characterizations, process and challenges concerning hybrid white light‐emitting diodes (LEDs). Here, for a “hybrid LED” we mean a device based on a layer of organic phosphors (or a mix of inorganic and organic ones) pumped by a high‐energy inorganic LED. Light is emitted by a frequency down‐conversion (sometimes simply named color‐conversion) process. Benefits and weak spots of this technology are investigated with a special attention for the materials involved into the process of frequency down‐conversion, in order to envisage the future impact of the hybrid lighting technology among the well‐established inorganic ones.

Raman measurements on GaN thin films for PV - purposes

2012

Raman scattering (RS) is a very important experimental tool to characterize the optical modes and another elementary excitations of materials. Among other issues it can determine for example the degree of crystalline quality and point defects like local modes. Therefore GaN - thin films and related compounds for photovoltaic purposes and as processed by several systems have been measured by this technique. The films were grown by Molecular Beam Epitaxy (MBE), Close Spaced Vapor Transport (CSVT) and Laser Ablation (LA) with the use of optimal growth parameters and substrates. Gallium nitride crystallizes in the wurtzite structure with 4 atoms in the unit cell and presents 7 allowed Raman mod…