Search results for "electronics"
showing 10 items of 4340 documents
Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
2011
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Atomic layer deposition of ferroelectric LiNbO3
2013
The ferroelectric and electro-optical properties of LiNbO3 make it an important material for current and future applications. It has also been suggested as a possible lead-free replacement for present PZT-devices. The atomic layer deposition (ALD) technique offers controlled deposition of films at an industrial scale and thus becomes an interesting tool for growth of LiNbO3. We here report on ALD deposition of LiNbO3 using lithium silylamide and niobium ethoxide as precursors, thereby providing good control of cation stoichiometry and films with low impurity levels of silicon. The deposited films are shown to be ferroelectric and their crystalline orientations can be guided by the choice of…
Electron cyclotron resonance ion source plasma chamber studies using a network analyzer as a loaded cavity probe
2012
A method and first results utilizing a network analyzer as a loaded cavity probe to study the resonance properties of a plasma filled electron cyclotron resonance ion source (ECRIS) plasma chamber are presented. The loaded cavity measurements have been performed using a dual port technique, in which two separate waveguides were used simultaneously. One port was used to ignite and sustain the plasma with a microwave source operating around 11 GHz and the other was used to probe the cavity properties with the network analyzer using a frequency range around 14 GHz. The first results obtained with the JYFL 14 GHz ECRIS demonstrate that the presence of plasma has significant effects on the reson…
About the dynamics of strongly coupled surface plasmon polaritons and Sulforhodamine 101
2014
We investigate the dynamics of strongly coupled surface plasmon polaritons (SPP) and molecular excitations (ME) of Sulforhodamine 101 dye. The SPPs are excited by prism coupling technique on a thin silver film with dye molecules embedded in a polymer layer on top of it. Rabi splittings with energies of 135 and 97 meV are observed in the recorded dispersion relations. Both coupled oscillator model and transfer matrix method are used to fit the experimental results. In addition to the common reflectance measurements, polarization resolved detection of scattered signal from the molecular side is also utilized. Simultaneous detection of the scattered polaritons and molecular fluorescence reveal…
Collective optical resonances in networks of metallic carbon nanotubes
2013
Abstract We demonstrate that thin films of randomly oriented metallic single-walled carbon nanotubes possess optical resonances with significant dispersion. The resonances are observed in the Kretschmann configuration as minima in reflection spectra close to 400 nm and 700 nm wavelengths. The dispersions are visible only when the material is excited with s -polarized light, and most prominent in layers with thickness near 100 nm. We conclude that magnetic plasmon polaritons arising from intertube interactions are a likely explanation. Closeness of the M 11 and M 22 transition energies to the observed resonances points to a possible coupling with excitons.
Background-Free Second-Harmonic Generation Microscopy of Individual Carbon Nanotubes
2015
We use polarized second-harmonic generation (SHG) microscopy to investigate pristine air-suspended carbon nanotubes (CNT). We show that SHG originates from CNT chirality, allowing also different response for the two circular polarizations of fundamental light.
Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
2012
The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 °C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF6 and O2 under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film’s removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film remova…
Direct optical measurement of light coupling into planar waveguide by plasmonic nanoparticles
2012
Coupling of light into a thin layer of high refractive index material by plasmonic nanoparticles has been widely studied for application in photovoltaic devices, such as thin-film solar cells. In numerous studies this coupling has been investigated through measurement of e.g. quantum efficiency or photocurrent enhancement. Here we present a direct optical measurement of light coupling into a waveguide by plasmonic nanoparticles. We investigate the coupling efficiency into the guided modes within the waveguide by illuminating the surface of a sample, consisting of a glass slide coated with a high refractive index planar waveguide and plasmonic nanoparticles, while directly measuring the inte…
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
2008
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
Detection of Partial Discharges at Square Shaped Voltages
2018
Due to the wide use of electronic converters and the introduction of new powerful power electronics devices, the input waveforms most often used are becoming much different than the traditional power frequent sinusoidal one. In High Voltage (HV) apparatus particularly, this condition can increase the stress on the insulation systems that may lower the reliability of the whole power grid. This type of input voltage, often showing an increased voltage gradient, causes problems in the Partial Discharge (PD) measurement setup and acquisition systems, also due to the increased harmonic content. In this paper, the main aim is to discuss how to suitably approach the measurement technique of PDs at…