6533b834fe1ef96bd129d79d
RESEARCH PRODUCT
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
Silvestra Di MarcoBruno PignataroMaria Ausilia Di StefanoAntonino ScandurraSebastiano RavesiGiuseppe Francesco IndelliSalvatore Pignatarosubject
Materials sciencetantalum nitrideAnalytical chemistryTantalumchemistry.chemical_elementSurfaces and InterfacesGeneral ChemistryCondensed Matter PhysicsGrain sizeSurfaces Coatings and Filmschemistry.chemical_compoundTantalum nitridechemistryX-ray photoelectron spectroscopyElectrical resistivity and conductivitySputteringXPSMaterials ChemistryAFMThin filmplastic electronicsSIMSSheet resistanceplastic electronics tantalum nitride XPS AFMSIMSdescription
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed an increase in resistivity ongoing from the Ta 2 N phase to the Ta 3 N 5 one. The electrical properties of these films are comparable to those obtained by high temperature deposition process already reported in literature. Furthermore, a roughness and grain size modulation of the above films can be obtained by applying an RF negative bias during deposition without affecting the electrical resistivity.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2008-01-01 | Surface and Interface Analysis |