0000000000807923
AUTHOR
Giuseppe Francesco Indelli
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
SURFACE EFFECTS ON THE GROWTH OF SOLUTION PROCESSED PENTACENE THIN FILMS
13,6-N-Sulfinylacetamidopentacene (SAP) has been transferred on solid substrates both by water-rich environment and organic solvents without altering his chemical structure. Thermal conversion of SAP to pentacene leads to crystals showing similar features of vacuum-sublimated pentacene both in the bulk and thin-film phases. The thin-film phase is strongly affected by the substrate surface properties. Low energy Si-CH3 rich surfaces allow for the formation of compact micrometric crystals following a Volmer-Weber like growth with orientation suitable for field-effect carrier mobility. Screw dislocations along with straight edges are found on these systems as an indication of a loose interlaye…