0000000000807922
AUTHOR
Sebastiano Ravesi
Tantalum nitride thin film resistors by low temperature reactive sputtering for plastic electronics
This article describes the fabrication and characterisation of tantalum nitride (TaN) thin film for applications in plastic electronics. Thin films of comparable thickness (50-60 nm) have been deposited by RF-magnetron-reactive sputtering at low temperature (100 °C) and their structure and physical (electrical and mechanical) properties have been correlated by using sheet resistance, stress measurements, atomic force microscopy (AFM), XPS, and SIMS. Different film compositions have been obtained by varying the argon to nitrogen flow ratio in the sputtering chamber. XPS showed that 5:1, 2:1 and 1:1 Ar:N 2 ratios gives Ta 2 N, TaN and Ta 3 N 5 phases, respectively. Sheet resistance revealed a…
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency…
SURFACE EFFECTS ON THE GROWTH OF SOLUTION PROCESSED PENTACENE THIN FILMS
13,6-N-Sulfinylacetamidopentacene (SAP) has been transferred on solid substrates both by water-rich environment and organic solvents without altering his chemical structure. Thermal conversion of SAP to pentacene leads to crystals showing similar features of vacuum-sublimated pentacene both in the bulk and thin-film phases. The thin-film phase is strongly affected by the substrate surface properties. Low energy Si-CH3 rich surfaces allow for the formation of compact micrometric crystals following a Volmer-Weber like growth with orientation suitable for field-effect carrier mobility. Screw dislocations along with straight edges are found on these systems as an indication of a loose interlaye…
MATERIALS AND PROCESSING ISSUES FOR THE MANUFACTURING OF INTEGRATED PASSIVE AND ACTIVE DEVICES ON FLEXIBLE SUBSTRATES
Plast_ICs is a Public/Private Laboratory funded by Italian Government aimed to build a novel technological platform for the development of flexible electronics, mainly, but not solely, based on thin inorganic films. Integration of different functions, on single and/or multiple plastic foils, to generate a smart system is the final goal of the project. The building blocks of the platform will be presented, starting from the different plastic substrates characterization, going through the development of active devices, such as thin-film- transistors, and passive devices, like thin-film- resistors, capacitors, inductors. Fully inorganic elementary devices, based on optical patterning and in va…