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RESEARCH PRODUCT
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
Silvestra Di MarcoSebastiano RavesiStella Lo VersoS. LombardoNoemi Graziana SpartaCosimo GerardiSalvatore CoffaFabio PrincipatoM. FotiG. Cannellasubject
Materials scienceThin-film solar cells hydrogenated amorphous silicon (a-Si:H)transparent conductive oxidebusiness.industryOptoelectronicsThin film solar cellbusinessMetal semiconductorTransparent conducting filmdescription
We have investigated the role of the metal-semiconductor back contact on the performances of thin film modules consisting of single junction a-Si:H photovoltaic (PV) cells deposited with p-i-n configuration. We find that an adequate choice of the back contact helps reducing the barrier height of the junction improving the contact conductivity. For this purpose Mo has shown to be effective. Moreover we find that Mo, as refractory material, has additional beneficial effects reducing the formation of defects leading to the decrease of recombination losses. We have then fabricated a PV module on flexible substrate for indoor energy harvesting applications using Mo as back contact. An efficiency of 6% is obtained at 300 lux under F12 spectrum illumination.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2011-08-01 |