Search results for "erbium"
showing 10 items of 253 documents
Flat supercontinuum generation pumped by amplified noise-like pulses from a figure-eight erbium-doped fiber laser
2017
The conditions to obtain noise-like pulses (NLPs) from a figure-eight fiber laser (F8L) and their application for supercontinuum (SC) generation in the anomalous dispersion regime are reported. The F8L is designed to remove the undesired low-intensity background radiation from pulse emission, generating NLPs with a 3 dB spectral bandwidth of 17.43 nm at the fundamental repetition frequency of 0.8 MHz. After amplification, NLPs reach a maximum average power of 9.2 mW and 123.32 nm spectral bandwidth. By controlling the amplifier pump power, flat SC generation is demonstrated through both a 800 m long spool of SMF-28 fiber and a piece of 5 m long highly nonlinear optical fiber. The results de…
Rare earth doped glass–ceramics containing NaLaF4 nanocrystals
2016
Abstract Oxyfluoride glasses 16Na 2 O–9NaF–5LaF 3 –7Al 2 O 3 –63SiO 2 (mol%) activated with 3% terbium, dysprosium, praseodymium and neodymium fluorides have been prepared and studied by differential thermal analysis, cathodoluminescence, X-ray induced luminescence, X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy. We found out that the presence of crystalline phase enhances the X-ray induced luminescence intensity. X-ray induced luminescence is the most intense for the sample activated with terbium and treated at 700 °C, whereas the praseodymium and neodymium activated samples have the fastest decay times.
Telecom to mid-infrared supercontinuum generation in a silicon germanium waveguide
2015
We report the first demonstration of broadband supercontinuum generation in silicon-germanium waveguides. Upon propagation of ultra-short femtosecond pulses in a 3-cm-long waveguide, the broadening extended from 1.455µm to 2.788µm (at the −30-dB point).
Carrier-induced quenching processes on the erbium luminescence in silicon nanocluster devices
2006
The luminescence-quenching processes limiting quantum efficiency in Er-doped silicon nanocluster light-emitting devices are investigated and identified. It is found that carrier injection, while needed to excite Er ions through electron-hole recombination, at the same time produces an efficient nonradiative Auger deexcitation with trapped carriers. This phenomenon is studied in detail and, on the basis of its understanding, we propose device structures in which sequential injection of electrons and holes can improve quantum efficiency by avoiding Auger processes. © 2006 The American Physical Society.
Silicon-based light-emitting devices: Properties and applications of crystalline, amorphous and er-doped nanoclusters
2006
In this paper, we summarize the results of an extensive investigation on the properties of MOS-type light-emitting devices based on silicon nanostructures. The performances of crystalline, amorphous, and Er-doped Si nanostructures are presented and compared. We show that all devices are extremely stable and robust, resulting in an intense room temperature electroluminescence (EL) at around 900 nm or at 1.54 μm. Amorphous nanoclusters are more conductive than the crystalline counterpart. In contrast, nonradiative processes seem to be more efficient for amorphous clusters resulting in a lower quantum efficiency. Erbium doping results in the presence of an intense EL at 1.54 μm with a concomit…
Photonic Crystal‐Driven Spectral Concentration for Upconversion Photovoltaics
2014
The main challenge for applying upconversion (UC) to silicon photovoltaics is the limited amount of solar energy harvested directly via erbium-based upconverter materials (24.5 W m–2). This could be increased up to 87.7 W m–2 via spectral concentration. Due to the nonlinear behavior of UC, this could increase the best UC emission by a factor 13. In this paper, the combined use of quantum dots (QDs)—for luminescent down-shifting—and photonic crystals (PCs)—for reshaping the emission—to achieve spectral concentration is shown. This implies dealing with the coupling of colloidal QDs and PC at the high-density regime, where the modes are shifted and broadened. In the first fabricated all-optica…
Optical rotary power at the resonance of the Terbium 7F6→5D4 line in Terbium Gallium Garnet
1998
Abstract The Tb 3+ absorption line 7 F 6 → 5 D 4 of the Terbium Gallium Garnet crystal is excited with an Argon ion laser. The Verdet's constant has been determined and reported against 1/ λ 2 , showing no significant resonant behaviour at absorption resonance. The utility and the constraints of the crystal at this particular resonant wavelength are pointed out.
Passively mode-locked erbium-doped double-clad fiber laser operating at the 322nd harmonic
2009
International audience; We report passive mode locking of a soliton erbium-doped double-clad fiber laser operating at the 322nd harmonic of the fundamental cavity frequency. Repetition rates up to 3 GHz have been obtained with pulses of 1 ps duration and 18 pJ of energy. The supermode suppression at the 322nd harmonic is better than 25 dB. In addition, the transition dynamics from a bunched state of pulses to stable harmonic mode locking is presented, revealing a very long time scale.
Erbium-Doped-Silica Photonic Crystal Fiber Characterization Method: Description and Experimental Check
2010
The present paper reports and discusses a characterization method for erbium-doped-silica photonic crystal fibers based on the measurement of pump power attenuation and gain together with the McCumber theory. The absorption and emission cross sections and the passive losses of the fiber were obtained from a fitting procedure of theoretical to experimental values. The method was checked by means of a home-made photonic crystal fiber to verify its reliability. Finally, it was found that the characteristic parameters obtained by this method can be used to accurately simulate the performance of the fiber and therefore to design devices based on it.
Long-cavity all-fiber ring laser actively mode locked with an in-fiber bandpass acousto-optic modulator.
2013
We demonstrate low-frequency active mode locking of an erbium-doped all-fiber ring laser. As the mode locker, we used a new in-fiber bandpass acousto-optic modulator showing 74% modulation depth, 3.7 dB power insertion losses, 4.5 nm of optical bandwidth, and 20 dB of nonresonant light suppression. The laser generates 330 ps mode-locked pulses over a 10 ns pedestal, at a 1.538 MHz frequency, with 130 mW of pump power. Fil: Cuadrado Laborde, Christian Ariel. Universidad de Valencia; España. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico La Plata. Centro de Investigaciones Opticas (i); Argentina. Provincia de Buenos Aires. Gobernación. Comisión de In…