Search results for "eta"

HCl gas gettering of low-cost silicon

2013

HCl gas gettering is a cheap and simple technique to reduce transition metal concentrations in silicon. It is attractive especially for low-cost silicon materials like upgraded metallurgical grade (UMG) silicon, which usually contain 3d transition metals in high concentrations. Etching of silicon by HCl gas occurs during HCl gas gettering above a certain onset temperature. The etching rate as well as the gettering efficiency was experimentally determined as a function of the gettering temperature, using UMG silicon wafers. The activation energy of the etching reaction by HCl gas was calculated from the obtained data. The gettering efficiency was determined by analyzing Ni as a representativ…

Thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe20Ni80 spin-valve structures

2017

Abstract We investigated the thermal stability of magnetic characteristics of Co/Ag/Fe and Co/Ag/Fe 20 Ni 80 spin-valve structures. Thin film systems were obtained with the help of sputtering method. For the first type of systems two particular thicknesses ( d ML  = 3 and 20 nm) and different disposition of magnetic layers (ML) were used. For the second type different thickness of Ag ( d NML ) spacer layer was used. The research of the crystal structure was performed with the transmission electron microscope. The results demonstrate that every investigated as-deposited sample does not include solid solutions, intermetallic compounds or impurities. It has been found that among the spin-valve…

Reduced temperature sensitivity of multicrystalline silicon solar cells with low ingot resistivity

2016

This study presents experimental data on the reduction of temperature sensitivity of multicrystalline silicon solar cells made from low resistivity ingot. The temperature coefficients of solar cells produced from different ingot resistivities are compared, and the advantages of increasing the net doping are explained.

High spatial resolution strain measurements at the surface of duplex stainless steels

2007

International audience; The determination of local strain fields at the surface of materials is of major importance for understanding their reactivity. In the present paper, lithography is used to fabricate grid points at the microscale and to map strain gradients within grains and between grains. This method was applied to duplex stainless steels which exhibit heterogeneous strain distributions under straining conditions. The influence of various parameters (the specimen microstructure, the density of slip bands, the number of systems activated and the grid geometry) on the strain value was discussed.

Reducing the Schottky barrier height at the MoSe2/Mo(110) interface in thin-film solar cells: Insights from first-principles calculations

2016

Abstract We report on first-principles calculations of the properties of the MoSe2/Mo(110) interface. Due to mismatch between the lattice parameters of the two structures, different patterns can form at the interface. We have studied the formation energy and the band alignment of six patterns for the MoSe2 (0001)/Mo(110) interface and one pattern for the MoSe2 (11 2 0)/Mo(110) interface. The MoSe2 (11 2 0)/Mo(110) interface is more stable than the MoSe 2 (0001)/Mo(110) interface and in contrast to MoSe2 (0001)/Mo(110), no Schottky barrier forms at MoSe2 (11 2 0)/Mo(110). Doping with Na modifies the band alignment at the interfaces. The Schottky barrier height decreases, provided that a Na a…

The role of seed electrons on the plasma breakdown and preglow of electron cyclotron resonance ion source

2009

The 14 GHz Electron Cyclotron Resonance Ion Source at University of Jyväskylä, Department of Physics (JYFL) has been operated in pulsed mode in order to study the plasma breakdown and preglow effect. It was observed that the plasma breakdown time and preglow characteristics are affected by seed electrons provided by a continuous low power microwave signal at secondary frequency. Sustaining low density plasma during the off-period of high power microwave pulses at the primary frequency shifts the charge state distribution of the preglow transient toward higher charge states. This could be exploited for applications requiring fast and efficient ionization of radioactive elements as proposed f…

3D magnetic and thermal fields for in the transformer with homogenised amorphous C-core under high frequency

2017

Influence of surface topography on depth profiles obtained by Rutherford backscattering spectrometry

2000

A method for determining correct depth profiles from samples with rough surfaces is presented. The method combines Rutherford backscattering spectrometry with atomic force microscopy. The topographical information obtained by atomic force microscopy is used to calculate the effect of the surface roughness on the backscattering spectrum. As an example, annealed Au/ZnSe heterostructures are studied. Gold grains were observed on the surfaces of the annealed samples. The annealing also caused diffusion of gold into the ZnSe. Backscattering spectra of the samples were measured with a 2 MeV 4He+ ion beam. A scanning nuclear microprobe was used to verify the results by measuring backscattering fro…

Casting technology for ODS steels – dispersion of nanoparticles in liquid metals

2017

Dispersion of particles to produce metal matrix nanocomposites (MMNC) can be achieved by means of ultrasonic vibration of the melt using ultrasound transducers. However, a direct transfer of this method to produce steel composites is not feasible because of the much higher working temperature. Therefore, an inductive technology for contactless treatment by acoustic cavitation was developed. This report describes the samples produced to assess the feasibility of the proposed method for nano-particle separation in steel. Stainless steel samples with inclusions of TiB2, TiO2, Y2O3, CeO2, Al2O3 and TiN have been created and analyzed. Additional experiments have been performed using light metals…

Annealing behaviour of aluminium-implanted InP

2000

The annealing behaviour of aluminium has been studied in single-crystal InP implanted with 40 and 120 keV 27Al+ ions. The implantation doses were 1 x 1015 and 1 x 1016 cm-2. The aluminium concentration profiles were determined by two techniques, Secondary ion mass spectrometry (SIMS) and the nuclear resonance broadening technique (NRB) which was used for checking purposes. The usability of the SIMS technique for profiling Al rich layers was studied. Significant inconsistencies were observed in the SIMS profiles with the high dose implanted samples. The 120 keV, 1 x 1016 cm-2 implanted samples were subject to annealing in argon atmosphere in the temperature range 380–600°C. Redistribution an…