Search results for "ferroelectric"
showing 10 items of 374 documents
Relaxor ferroelectric ceramics of LiTaO3-type
1992
Abstract A ferroelectric relaxation has been identified in Li1-xCax (Ta1-xZrx)O3(x = 0.15 and 0.20) ceramics with LiTaO3-type structure. The relaxation frequency fr is minimum and the dispersion step (ϵ′S - ϵ′∞) is maximum at TC. When x increases, a higher conductivity associated with a lower activation energy and a decrease of the magnitude of fr at Tc are observed, while the unit cell volume becomes larger, TC lower and the transition more diffuse.
The depolarization field effect on the thin ferroelectric films properties
2002
Abstract The calculation of the spontaneous polarization (Ps), dielectric susceptibility (χ) and pyroelectric coefficient (Π) of the ferroelectric films has been performed in the phenomenological theory framework. Euler–Lagrange equation was solved analytically under the boundary conditions with different extrapolation lengths at two surfaces, respectively. The depolarization field contribution was taken into account in the model of short-circuited mono domain ferroelectric film, treated as perfect insulator. The detailed analysis of the aforementioned quantities’ space distribution and their average values in two cases with and without depolarization field was carried out. It was shown tha…
Ferroelectric Behavior in Epitaxial Films of Relaxor PbMg1/3Nb2/3O3
2004
The nonlinear dielectric response of epitaxial thin films of relaxor ferroelectric PbMg1/3Nb2/3O3 was experimentally studied using digital Fourier analysis. Change from glass-like to ferroelectric behavior was detected in a broad temperature range, at relatively low ac and/or dc electric fields, and at a time scale of seconds. The presence of interfaces and peculiar microstructure of thin films are suggested to determine such a specific behavior.
ELECTRICAL PROPERTIES OF LEAD FERROTANTALATE CERAMICS
2009
ABSTRACT Perovskite structures with high dielectric constants and magnetic properties play an important role in micro- and optoelectronics and have numerous practical applications. Relaxor type ferroelectric ceramics PbFe1/2Ta1/2O3 with perovskite structure was subject of present studies. Pyrochlore free lead ferrotantalate ceramics were produced by solid state technology from oxides. Low- and infra-low frequency studies of dielectric properties of PbFe1/2Ta1/2O3 ceramics have revealed considerable infra-low frequency dispersion at temperatures above the temperature of maximum dielectric permittivity. The observed dispersion described by lemniscates is due to a considerable Maxwell-Wagner r…
Epitaxial Films of Relaxor Ferroelectric PbMg1/3Nb2/3O3in Strong Electric Fields
2005
Epitaxial thin films of perovskite relaxor ferroelectric PbMg 1/3 Nb 2/3 O 3 were grown on MgO (001) substrates by pulsed laser deposition using La 0.5 Sr 0.5 CoO 3 bottom electrode layers. Dielectric response of the films was experimentally studied as a function of temperature and frequency in a broad range of amplitudes of ac electric field (to 10 MV/m) and magnitudes of dc electric field (to 50 MV/m). At small fields, a glass-like behavior was observed. With increasing magnitude of the dc field, an onset of a polar state was detected. The orientation of the polar clusters along the direction of the field and fluctuations of the direction of their dipole moments were suggested to determin…
Theoretical investigation of the platinum substrate influence on BaTiO 3 thin film polarisation
2019
Density functional theory calculations are performed to study the out-of-plane polarisation in BaTiO3 (BTO) thin films epitaxially grown on platinum. Prior to any polarisation calculation, the stability of the Pt(001)/BaTiO3(001) structure is thoroughly discussed. In particular, the nature of the Pt/BTO and BTO/vacuum interfaces is characterised. The growth of BTO is shown to start with a TiO2 layer while the nature of the surface termination does not broadly modify the stability. Therefore both upper terminations are considered when describing the ferroelectric behaviour in Pt/BTO interfaces. The geometric and electronic effects of the substrate on the polarisation are investigated. To iso…
Influence of Structure Ordering, Defects and External Conditions on Properties of Ferroelectric Perovskites
2000
Results of comprehensive studies of the (A’A“)(B’B”)O3-ferroelectric perovskites are reported. Examined compositions include Pb1-xLax(Zr0.65Ti0.35)1-x/4O3(PLZT), PbSc0.5Nb0.5O3(PSN), PbSc0.5Ta0.5O3(PST), and PMNT, PSNT and PLuNT pseudo-binary systems exhibiting pronounced dielectric, electrooptical, and electromechanical properties. Degree of ordering in the materials has been varied by chemical composition (modification, isomorphic ion substitution), by variation of technology (hot-pressing, specific thermal treatment, thin films), and by irradiation of different kind and intensity (γ-rays, electrons, neutrons).
Dielectric relaxation of space charges and polarons in ferroelectric perovskites
2001
Abstract In all ferroelectric perovskites, intentionally introduced or “unwanted” point defects do play a role in the dielectric spectra and in the conductivity. Above room temperature, space charge relaxation at the electrodes interfaces are observed. This can be of interest in the context of the nowadays applications of ferroelectric thin films. At liquid helium temperatures much more localised dielectric relaxation occurs. Special emphasis will be brought on SrTiO3 which has received renewed interest at the beginning of the nineties and for which a wealth of reliable experimental data are available. Considering that a gradual freezing of polarized objects is occurring at low temperatures…
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
2004
Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.