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RESEARCH PRODUCT
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
Karl HumerK. KundzinsAndris SternbergR. BittnerL. CakareL. CakareIlze AulikaD. KulikovYuri V. TrushinDmitry A. LesnyhVismants ZaulsHarald W. Webersubject
Materials scienceCondensed matter physicsMaterials ChemistryCeramics and CompositesMineralogyAntiferroelectricityIrradiationDielectricThin filmFluenceFerroelectricityTitanateZirconatedescription
Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.
year | journal | country | edition | language |
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2004-01-01 | Journal of the European Ceramic Society |