0000000000376368
AUTHOR
L. Cakare
Synthesis of Lead Zirconate Antiferroelectric Thin Films by Sol-Gel Processing
A modified methoxyethanol sol-gel process was used for the production of PbZrO3 thin films. The new route uses lead oxide [PbO] instead of lead acetate [Pb(OAc)2]. Through the use of this method it is possible to prepare single-phase perovskite materials with improved properties. Examples are given for PbZrO3 thin layers deposited by the spin coating process on TiO2/Pt/TiO2/SiO2/Si substrates from various sols where lead acetate or lead oxide are used as the starting lead compound. The preferred orientation and the perovskite phase content of the films were studied using X-ray diffraction analysis (XRD). Scanning electron microscopy (SEM) was used for microstructural characterization of the…
<title>Irradiation effects in lead zirconate thin films</title>
Lead zirconate PbZrO3 (PZ) and PbZr0.53Ti0.47O3 (PZT) sol-gel films with a thickness of up to 1.5 μm were deposited on TiO2/Pt/TiO2/SiO2/Si substrates by spin coating technique and heterostructures of the same composition as well as on Pb0.92La0.08 (Zr0.65Ti0.35)O3 (PLZT-8) (with a thickness of 0.4 μm) were pulse laser deposited (PLD) on Pt/Ti/SiO2/Si. Observation of a typical antiferroelectric (AFE) double hysteresis loop in obtained PZ heterostructures at room temperature was attributed to the superior dielectric strength in case of thin film materials. The thermal behavior of dielectric permittivity e of PZ film reveals a maximum near 225°C on heating and 219°C on cooling. The higher res…
Dielectric properties of reactor irradiated ferroelectric thin films
Abstract Radiation effects in highly oriented Pb1Zr0.53Ti0.47O3 (PZT), Pb0.94La0.06Zr0.65Ti0.35O3 (PLZT-6), and PbiZriO3 (PZ) ferroelectric (FE) and antiferroelectric (AF) thin films are investigated in view of their possible application as a temperature sensitive element in a new bolometer system for ITER (International Thermonuclear Experimental Reactor). The dielectric properties (i.e. hysteresis loops, dielectric constants) of the films were investigated in a frequency range from 20 to 105 Hz and at temperatures up to 450 °C, before and after neutron irradiation to a neutron fluence of 5×1021 m−2 (E<0.1 MeV). The dielectric constant was measured during cooling with 1.7 °Cmin−1. The diel…
Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects
Abstract Irradiation effects on highly oriented antiferroelectric PbZrO 3 and ferroelectric Pb 0.92 La 0.08 (Zr 0.65 Ti 0.35 )O 3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10 22 m −2 . The higher resistance of antiferroelectric PbZrO 3 thin films as compared to ferroelectric heterostructures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO 3 films.